Journal of the Korea Academia-Industrial cooperation Society
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v.19
no.6
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pp.80-87
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2018
In recent years, due to the spread of various renewable energy power sources and the pursuit of high efficiency and low-power consumption, not only trends in the electric power industry but also the consumption, control methods, and characteristics are diversified. However, in this diversified electric power industry, the fuse (which is the core part responsible for safety) has not developed significantly in classical operation mode, and thus, fires continue to occur. In this paper, the effects of low melting-point metal plating and high melting-point metal plating on operating characteristics and IT curve movement of the fuse are investigated in a cartridge fuse, which is a classic fuse manufacturing method. The effects of plating on the thickness of the fuse are investigated, and various operating characteristics of the fuse are implemented. In addition, it is suggested that the plating of the low melting-point metal moves the rated current line of the fuse to a low rating, and moves operating characteristics to characteristics of delay operation. It is possible to design various operating characteristics using this characteristic.
Proceedings of the Korean Vacuum Society Conference
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2012.02a
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pp.431-432
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2012
In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.
Journal of the Microelectronics and Packaging Society
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v.20
no.3
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pp.31-35
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2013
TSOP(Thin Small Outline Package) is the IC package using lead frame, which is the type of low cost package for white electronics, auto mobile, desktop PC, and so on. Its performance is not excellent compared to BGA or flip-chip CSP, but it has been used mostly because of low price of TSOP package. However, it has been issued in TSOP package that thermal deflection of lead frame occurs frequently during molding process and Au wire between semiconductor die and pad is debonded. It has been required to solve this problem through substituting materials with low CTE and improving structure of lead frame. We focused on developing the lead frame structure having thermal stability, which was carried out by numerical analysis in this study. Thermal deflection of lead frame in TSOP package was simulated with positions of anti-deflection adhesives, which was ranging 198 um~366 um from semiconductor die. It was definitely understood that thermal deflection of TSOP package with anti-deflection adhesives was improved as 30.738 um in the case of inside(198 um), which was compared to that of the conventional TSOP package. This result is caused by that the anti-deflection adhesives is contributed to restrict thermal expansion of lead frame. Therefore, it is expected that the anti-deflection adhesives can be applied to lead frame packages and enhance their thermal deflection without any change of substitutive materials with low CTE.
Journal of the korean academy of Pediatric Dentistry
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v.35
no.1
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pp.175-180
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2008
Traumatic injuries to the primary dentition are commonly encountered problems in dental practice. It is found that 30% of the children had injuries to the primary dentition and 22% to the permanent dentition. The greatest incidence of trauma to the primary dentition occurs at the ages of 2 and 3 as children start to learn motor coordination. Because teeth and alveolar bone are traumatized simultaneously, alveolar bone fractures are likely to occur when multiple teeth are involved in injuries. Dental splints are indicated for the management of maxillofacial fractures. They enable anatomic reduction of fractured segments and help immobilization and maintenance of the fragments after reduction. They also act as a stabilizer during rehabilitation. Various types of dental splints are available. In this case, routine resin-wire splint technique could not be applied because of the child's uncooperative behavior. Oral sedation was not indicated because N.P.O. had not been preceded. Therefore, we decided to use open-cap acrylic splint instead. Stabilization using open cap acrylic splint requires minimum chair time with reduced discomfort to both patient and dentist. It is an effective means of splint for uncooperative children and especially useful when other means of fixation have been failed. Because trauma on the primary dentition can affect the underlying permanent tooth germ, it is important to monitor eruption process of the permanent dentition.
Journal of the korean academy of Pediatric Dentistry
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v.29
no.2
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pp.243-254
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2002
For the purpose of evaluating the biocompatability of 3 kinds of metallic materials frequently used in pediatric dentistry (stainless steel crown, orthodontic band, orthodontic wire), cellular and molecular studies, including cell growth and proliferation, screening of cell death with determination of types whether necrosis or apoptosis and changes in expressions of related signaling molecules were examined, using cultured human gingival fibroblasts (HGF-1), HGF-1 was cultured in Dulbecco's modified Eagle's medium. among which the 3rd to 6th generations of HGF-1 were used. The specimen were divided into stainless steel crown (R), band (B) and wire (W). The immunocytochemical study was done for the detection of anti-PCNA (proliferating cell nuclear antigen) labeling. With extracted protein, western blot was done for the detection of ERK1/2, JNK, and p38, using individual antibodies. Cultured cells proliferated, remarkably till 7 day and slightly at 11 day. There was no statistical significance in the counts of proliferating HGF-1 between control and experimental groups (p>0.05). Relative growth rates were no statistically significant difference between control and experimental groups (p>0.05). PCNA labeling indexes showing similar patterns in control and experimental groups. The expressions of ERK1 and ERK2, p38 were similar in control and experimental groups. The expression of JNK increased at 1st day, slightly decreased at 4th day and markedly increased at 7th and 11 day. Although the patterns of control and experimental groups were similar, the increased expressions of JNK at late period suggest a possible stress due to inhibited cell growth and proliferation, and worse culture condition. Conclusively, the 3 kinds of metal specimens used in this study did not induce cellular and molecular hazards during short term culture of HGF-1. But, for the better clinical stability, the establishment of long period culture and animal experiment was thought necessary.
Purpose: Thallous-201 chloride produced at Korea Cancer Center Hospital(KCCH) is used in detecting cardiovascular disease and cancer. Thallium impurity can cause emesis, catharsis and nausea, so the presence of thallium and other metal impurities should be determined. According to USP and KP, their amounts must be less than 2 ppm in thallium and 5 ppm in total. In this study, the detection method of trace amounts of metal impurities in $[^{201}Tl]$TICI injection with polarography was optimized without environmental contamination. Materials and Methods: For the detection of metal impurities, Osteryoung Square Wave Stripping Voltammetry method was used in Bio-Analytical System (BAS) 50W polarograph. The voltammetry was composed of Dropping Mercury Electrode (DME) as a working electrode, Ag/AgCl as a reference electrode and Pt wire as a counter electrode. Square wave stripping method, which makes use of formation and deformation of amalgam, was adopted to determine the metal impurities, and pH 7 phosphate buffer was used as supporting electrolyte. Results: Tl, Cu and Pb in thallous-201 chloride solution were detected by scanning from 300 mV to -800 mV Calibration curves were made by using $TINO_3,\;CuSO_4\;and\;Pb(NO_3){_2}$ as standard solutions. Tl was confirmed at -450 mV peak potential and Cu at -50 mV Less than 2 ppm of Tl and Cu was detected and Pb was not detected in KCCH-produced thallous-201 chloride injection. Conclusion: Detection limit of thallium and copper is approximately 50 ppb with this method. As a result of this experiment, thallium and other metal impurities in thallous-201 chloride injection, produced at Korea Cancer Center Hospital, are in the regulation of USP and KP Polarograph could be applied for the determination of metal impurities in the quality control of radiopharmaceuticals conveniently without environmental contamination.
The gold buckle excavated from Seogam-ri Tomb No. 9(National Treasure No. 189), one of the oldest gold artifacts discovered within the Korean Peninsula, was created using granulation techniques. The buckle is made with 22.8K gold sheets and features a decorative design with seven dragons in repousse metalwork. The outlines of the dragons and the edge of the buckle are finished with 23.8K gold wires and granules. Some curved sections of the buckle are also covered with an extra sheet of 23.8K gold, possibly added to repair defects discovered during production or thereafter. Gold wire used to render the dragon's nostrils is slightly lower in purity(23.3K) and was probably preferred in this case due to its increased hardness. As a result, the metal is better able to retain the complex shape of the dragons' nostrils, created by rolling gold wire into spirals. The buckle's gold granules are found in small, medium and large sizes and are presumed to have been bonded using copper. The foreheads and the bodies of the seven dragons are inset with turquoise and the eyes are decorated with red cinnabar/vermillion(HgS).
This study reports the high-temperature oxidation kinetics, ASR(area specific resistance), and interfacial microstructure of metallic interconnects coated with conductive oxides in oxidation atmosphere at $800^{\circ}C$, The conductive material LSC($La_{0.8}Sr_{0.2}CoO_3$, prepared by Solid State Reaction) was coated on the Crofer22APU. The contact behavior of coating layer/metal substrate was increased by sandblast. The electrical conductivity of the LSC coated Crpfer22APU was measured by a DC two probe four wire method for 4000hr, in air at $800^{\circ}C$. Microstructure and composition of the coated layer interface were investigated by SEM/EDS. These results show that a coated LSC layer prevents the formation and growth of oxide scale such as $Cr_2O_3$ and enhances the long-term stability and electrical performance of metallic interconnects for SOFCs.
Choi, Myung-Seok;Yoon, Tae-San;Kang, Bu-Gi;Cho, Samuel
The Journal of Korean Institute of Electromagnetic Engineering and Science
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v.24
no.11
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pp.1064-1073
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2013
In this paper, a compact 370 W high efficiency GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) power amplifier(PA) using internal harmonic manipulation circuits is presented for cellular and L-band. We employed a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd harmonic frequency. In order to minimize package size, new 41.8 mm GaN HEMT and two MOS(Metal Oxide Semiconductor) capacitors are internally matched and combined package size $10.16{\times}10.16{\times}1.5Tmm^3$ through package material changes and wire bonded in a new package to improve thermal resistance. When drain biased at 48 V, the developed GaN HEMT power amplifier has achieved over 80 % Drain Efficiency(DE) from 770~870 MHz and 75 % DE at 1,805~1,880 MHz with 370 W peak output power(Psat.). This is the state-of-the-art efficiency and output power of GaN HEMT power amplifier at cellular and L-band to the best of our knowledge.
Photoelectrochemical (PEC) systems are promising methods of producing H2 gas using solar energy in an aqueous solution. The photoelectrochemical properties of numerous metal oxides have been studied. Among them, the PEC systems based on TiO2 have been extensively studied. However, the drawback of a PEC system with TiO2 is that only ultraviolet (UV) light can be absorbed because of its large band gap (3.2 - 3.4 eV). Two approaches have been introduced in order to use PEC cells in the visible light region. The first method includes doping impurities, such as nitrogen, into TiO2, and this technique has been extensively studied in an attempt to narrow the band gap. In comparison, research on the second method, which includes visible light water splitting in molecular photosystems, has been slow. Mallouk et al. recently developed electrochemical water-splitting cells using the Ru(II) complex as the visible light photosensitizer. the dye-sensitized PEC cell consisted of a dye-sensitized TiO2 layer, a Pt counter electrode, and an aqueous solution between them. Under a visible light (< 3 eV) illumination, only the dye molecule absorbed the light and became excited because TiO2 had the wide band gap. The light absorption of the dye was followed by the transfer of an electron from the excited state (S*) of the dye to the conduction band (CB) of TiO2 and its subsequent transfer to the transparent conducting oxide (TCO). The electrons moved through the wire to the Pt, where the water reduction (or H2 evolution) occurred. The oxidized dye molecules caused the water oxidation because their HOMO level was below the H2O/O2 level. Organic dyes have been developed as metal-free alternatives to the Ru(II) complexes because of their tunable optical and electronic properties and low-cost manufacturing. Recently, organic dye molecules containing multi-branched, multi-anchoring groups have received a great deal of interest. In this work, tri-branched tri-anchoring organic dyes (Dye 2) were designed and applied to visible light water-splitting cells based on dye-sensitized TiO2 electrodes. Dye 2 had a molecular structure containing one donor (D) and three acceptor (A) groups, and each ended with an anchoring functionality. In comparison, mono-anchoring dyes (Dye 1) were also synthesized. The PEC response of the Dye 2-sensitized TiO2 film was much better than the Dye 1-sensitized or unsensitized TiO2 films.
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