• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.3
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• pp.252-258
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• 2013

In this paper, a thermally stable nickel silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for nano-scale metal oxide semiconductor field effect transistor (MOSFET) applications. The effects of the incorporation of titanium ingredient in the co-sputtered Ni layer are characterized as a function of Ti sputtering power. The difference between the one-step rapid thermal process (RTP) and two-step RTP for the silicidation process has also been studied. It is shown that a certain proportion of titanium incorporation with two-step RTP has the best thermal stability for this structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.260-260
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• 2009

In high-efficiency crystalline silicon solar cell, If high-efficiency solar cells are to be commercialized, It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper are applied widely in various electronic manufactures as easily formation is available by plating. Ni is shown to be a suitable barrier to Cu diffusin as well as desirable contact metal to silicon. Nickel monosilicide has been suggested as a suitable silicide due to its lower resistivitym lower sintering temperature and lower layer stress than $TiSi_2$. In this paper, Nickel as a seed layer and diffusion barrier is plated by electroless plating to make nickel monosilicide.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.438-439
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• 2013

Microelectronic devices의 접촉저항의 향상을 위해 Metal silicides의 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 지난 수십년에 걸쳐, Ti silicide, Co silicide, Ni silicide 등에 대한 개발이 이루어져 왔으나, 계속적인 저저항 접촉 소재에 대한 요구에 의해 최근에는 Rare earth silicide에 관한 연구가 시작되고 있다. Rare-earth silicide는 저온에서 silicides를 형성하고, n-type Si과 낮은 schottky barrier contact (~0.3 eV)를 이룬다. 또한, 비교적 낮은 resistivity와 hexagonal AlB2 crystal structure에 의해 Si과 좋은 lattice match를 가져 Si wafer에서 high quality silicide thin film을 성장시킬 수 있다. Rare earth silicides 중에서 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 낮은 schottky barrier 응용에서 쓰이고 있다. 이로 인해, n-channel schottky barrier MOSFETs의 source/drain으로써 주목받고 있다. 특히 ytterbium과 molybdenum co-deposition을 하여 증착할 경우 thin film 형성에 있어 안정적인 morphology를 나타낸다. 또한, ytterbium silicide와 마찬가지로 낮은 면저항과 electric work function을 갖는다. 그러나 ytterbium silicide에 molybdenum을 화합물로써 높은 농도로 포함할 경우 높은 schottky barrier를 형성하고 epitaxial growth를 방해하여 silicide film의 quality 저하를 야기할 수 있다. 본 연구에서는 ytterbium과 molybdenum의 co-deposition에 따른 silicide 형성과 전기적 특성 변화에 대한 자세한 분석을 TEM, 4-probe point 등의 다양한 분석 도구를 이용하여 진행하였다. Ytterbium과 molybdenum을 co-deposition하기 위하여 기판으로 $1{\sim}0{\Omega}{\cdot}cm$의 비저항을 갖는 low doped n-type Si (100) bulk wafer를 사용하였다. Native oxide layer를 제거하기 위해 1%의 hydrofluoric (HF) acid solution에 wafer를 세정하였다. 그리고 고진공에서 RF sputtering 법을 이용하여 Ytterbium과 molybdenum을 동시에 증착하였다. RE metal의 경우 oxygen과 높은 반응성을 가지므로 oxidation을 막기 위해 그 위에 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, 진공 분위기에서 rapid thermal anneal(RTA)을 이용하여 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium silicides를 형성하였다. 전기적 특성 평가를 위한 sheet resistance 측정은 4-point probe를 사용하였고, Mo doped ytterbium silicide와 Si interface의 atomic scale의 미세 구조를 통한 Mo doped ytterbium silicide의 형성 mechanism 분석을 위하여 trasmission electron microscopy (JEM-2100F)를 이용하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.250-253
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• 2007

An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. The Ni contact was formed on the front grid pattern by electroless plating followed by anneal ing at $380{\sim}400^{\circ}C$ for $15{\sim}30$ min at $N_{2}$ gas to allow formation of a nickel-silicide in a tube furnace or a rapid thermal processing(RTP) chamber because nickel is transformed to NiSi at $380{\sim}400^{\circ}C$. The Ni plating solution is composed of a mixture of $NiCl_{2}$ as a main nickel source. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. The Ni/Cu contact was found to be well suited for high-efficiency solar cells and was successfully formed by using electroless plating and electroplating, which are more cost effective than vacuum evaporation. In this paper, we investigated low-cost Ni/Cu contact formation by electroless and electroplating for crystalline silicon solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.261-265
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• 2011

This paper describes the fabrication and characteristics of a Au/Ni/Ti/3C-SiC Schottky diode with field plate (FP) edge termination. The Schottky contacts were annealed for 30 min at temperatures ranging from 0 to $800^{\circ}C$. At annealing temperature of $600^{\circ}C$, it showed an inhomogeneous Schottky barrier and had the best electrical characteristics. However, the annealing of $800^{\circ}C$ replaced it with ohmic behaviors because of the formation of many different types of nickel silicides. The fabricated Schottky diode had a breakdown voltage of 200 V, Schottky barrier height of 1.19 eV and worked normally even at $200^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.192-193
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• 2007

An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electro less plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. In this paper, we investigated low-cost Ni/Cu contact formation by electro less and electroplating for crystalline silicon solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.444-445
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• 2009

The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

• Journal of Welding and Joining
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• v.25 no.5
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• pp.45-50
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• 2007

The Ni-base superalloy GTD111 DS is used in the first stage blade of high power land-based gas turbines. Advanced repair technologies of the blade have been introduced to the gas turbine industry over recent years. The effect of the filler metal powder on Transient Liquid Phase bonding phenomenon and tensile mechanical properties was investigated on the GTD111 DS superalloy. At the filler metal powder N series, the base metal powders fully melted at the initial time and a large amount of the base metal near the bonded interlayer was dissolved by liquid inter metal. Liquid filler metal powder was eliminated by isothermal solidification which was controlled by the diffusion of B into the base metal. The solids in the bonded interlayer grew from the base metal near the bonded interlayer inward the insert metal during the isothermal solidification. The bond strength of N series filler metal powder was over 1000 MPa. and ${\gamma}'$ phase size of N series TLP bonded region was similar with base metal by influence of Ti, Al elements. At the insert metal powder M series, the Si element fluidity of the filler metal was good but microstructure irregularity on bonded region because of excessive Si element. Nuclear of solids formed not only from the base metal near the bonded interlayer but also from the remained filler metal powder in the bonded interlayer. When the isothermal solidification was finished, the content of the elements in the boned interlayer was approximately equal to that of the base metal. But boride and silicide formed in the base metal near the bonded interlayer. And these boride decreased with the increasing of holding time. The bond strength of M series filler metal powder was about 400 MPa.

• 한국태양에너지학회:학술대회논문집
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• 2009.04a
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• pp.214-219
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• 2009

In high-efficiency crystalline silicon solar cells, If high-efficiency solar cells are to be commercialized. It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper and Silver are applied widely in various electronic manufactures as easily formation is available by plating. The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposite the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 14.68 % on $0.2{\sim}0.6{\Omega}{\cdot}cm,\;20{\times}20mm^2$, CZ(Czochralski) wafer.

• New & Renewable Energy
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• v.1 no.1 s.1
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• pp.37-43
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• 2005

High-efficiency silicon solar cells have potential applications on mobile electronics and electrical vehicles. The fabrication processes of the high efficiency cells necessitate com placated fabrication precesses and expensive materials. Ti/Pd/Ag metal contact has been used only for limited area In spite of good stability and low contact resistance because of Its expensive material cost and precesses. Screen printed contact formed by Ag paste causes a low fill factor and a high shading loss of commercial solar cells because of high contact resistance and a low aspect ratio. Low cost Ni/Cu metal contact has been formed by using a low cost electroless and electroplating. Nickel silicide formation at the interface enhances stability and reduces the contact resistance resulting In an energy conversion efficiency of $20.2\%\;on\;0.50{\Omega}cm$ FZ wafer. Tapered contact structure has been applied to large area solar cells with $6.7\times6.7cm^2$ in order to reduce power losses by the front contact The tapered front metal contact Is easily formed by the electroplating technique producing $45cm^2$ solar cells with an efficiency of $21.4\%$ on $21.4\%\;on\;2{\Omega}cm$ FZ wafer.