• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
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• pp.235-240
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• 2009

Crystlline silicon solar cells markets are increasing at rapid pace. now, crystlline silicon solar cells markets screen-printing solar cell is occupying. screen-printing solar cells manufacturing process are very quick, there is a strong point which is a low cost. but silicon and metal contact, uses Ag & Al pates. because of, high contact resistance, high series resistance and sintering inside process the electric conductivity decreases with 1/3. and In pastes ingredients uses Ag where $80{\sim}90%$ is metal of high cost. because of low cost solar cells descriptions is difficult. therefore BCSC(Buried Contact Solar Cell) is developed. and uses light-induced plating, ln-line galvanization developed equipments. Ni/Cu matel contact solar cells researches. in Germany Fraunhofer ISE. In order to manufacture high-efficiency solar cells, metal selections are important. metal materials get in metal resistance does small, to be electric conductivity does highly. efficiency must raise an increase with rise of the curve factor where the contact resistance of the silicon substrate and is caused by few with decrement of series resistance. Ni metal materials the price is cheap, Ti comes similar resistance. Cu and Ag has the electric conductivity which is similar. and Cu price is cheap. In this paper, Ni/Cu/Ag metal contact cell with screen printing manufactured, silicon metal contact comparison and analysis.

• 한국세라믹학회지
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• 제33권12호
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• pp.1421-1425
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• 1996

Sintered Si3N4 and Inconel composed of Ni(58-63%) Cr(21-25%) Al(1-17%) Mn(<1%) fe(balance) were pressurelessly joined by using Ag-Cu-Ti brazing filler metal at 950℃ and 1200℃ under N2 gas atmosphere of 1atm and their interfacial structures were investigated. In case that the reaction temperature was low as 950℃ its interfacial structure was "Inconel metal/Ti-rich phase layer/brazing filler metal layer/Si3N4 " Ti used as reactive metal existed in between inconel steel and brazing metal and moved to the interface of between brazing filler metal nd Si3N4 according as reaction temperature increased up to 1200℃. The interfacial structure of inconel steel-Si3N4 reacted at 1200℃ was ' inconel metal/Ni-rich phase layer containing of Fe. Cr and Si/Cu-rich phase layer containing of Mn and Si/Si3N4 " Cr Mn, Ni and Fe diffused to the interface of between brazing filler metal and Si3N4 and reacted with Si3N4 The most reactive components of ingredients of inconel metal were Cr and Mn. On the other hand Ti added as reactive components to Ag-Cu eutectic segregated into Ni-rich phase layer,.

• 분석과학
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• 제12권2호
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• pp.159-165
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• 1999

수용액에서 1,12-diaza-3,4:9,10-dibenzo-5,8-dioxacyclopentadecane(NTOE)가 결합된 merrifield 수지와 1,12,15-triaza-3,4:9,10-dibenzo-5,8-dioxacycloheptadecane(NDOE)가 결합된 merrifield 수지를 이용한 전이금속이온들의 흡착 및 분리특성을 조사하였다. 전이금속이온들의 흡착정도(adsorption degree, E)와 분포비(distribution ratio, D)의 순위는 동일하게 Cu(II)$t_R$)이 흡착정도와 분포비에 의해서 영향을 받았으며, 이러한 흡착 및 분리 실험 결과로부터 혼합금속용액에서 Ag(I)의 분리가능성을 확인할 수 있었다.

• 대한화학회지
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• 제58권6호
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• pp.513-516
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• 2014

We measure the conductance of a 4,4'-diaminobiphenyl formed with Ni electrodes using a scanning tunneling microscope-based break-junction technique. For comparison, we use Au or Ag electrodes to form a metal-molecular junction. For molecules that conduct through the highest occupied molecular orbital, junctions formed with Ni show similar conductance as Au and are more conductive than those formed with Ag, consistent with the higher work function for Ni or Au. Furthermore, we observe that the measured molecular junction length that is formed with the Ni or Au electrodes was shorter than that formed with the Ag electrodes. These observations are attributed to a larger gap distance of the Ni or Au electrodes compared to that of the Ag electrodes after the metal contact ruptures. Since our work allows us to measure the conductance of a molecule formed with various electrodes, it should be relevant to molecular electronics with versatile materials.

• 마이크로전자및패키징학회지
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• 제9권2호
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• pp.1-9
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• 2002

실제 BGA패키지에서 Sn-Ag-(Cu) 솔더와 금속패드가 반응하여 생성된 금속간 화합물의 특성을 Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS)f) X-ray Diffractometer (XRD)를 사용하여 분석하였다. EDS로 분석한 결과를 보면 BGA 패키지에서 Sn-Ag-Cu 솔더와 Au/Ni/Cu 금속층간의 반응으로 생성된 금속간화합물은 $(Cu,Ni)_6Sn_5$로 예상되며 . Cu의 편석은 솔더와 Ni 층 사이에서 발견되었다. XRD 분석결과 Cu를 함유하고 있는 Sn-Ag-Cu 솔더와 Ni층 사이에서는 $\eta -Cu_6 Sn_5$ 타입의 금속간화합물이 분석되었으며 Sn-Ag 솔더와 Ni층 사이에서는 $Ni_3$Sn_4$가 분석되었다. 계면에 생성된 금속간화합물은 리플로 회수와솔더내의 Cu의 함량에 따라증가하였다

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.349-349
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• 2010

Great performance of many semiconductor devices requirs the use of low-resistance ohmic contact. Typically, transmission line method (TLM) patterns are used to measure the specific contact resistance between silicon and metal. In this works, we investigate contact resistance for metal dependent (Cr/Ag, Ni) using TLM pattern based on silicon-on-insulator (SOI) wafer. The electrode with Ni linearly increases contact resistance as the pattern distance increase from $15{\mu}m$ to $75{\mu}m$ in accumulation part, but non-linearly increase in inversion part. In additional, the electrode with Cr/Ag linearly increases contact resistance as the pattern distance increase from $15{\mu}m$ to $75{\mu}m$ in inversion part, but non-linearly increase in accumulation part.

• 분석과학
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• 제11권4호
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• pp.248-253
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• 1998

수용액에서 poly-dibenzo-18-crown-6를 이용한 알칼리, 알칼리토금속이온 및 전이금속이온들의 흡착 및 분리특성을 조사하였다. 알칼리금속이온들과 알칼리토금속이온들의 흡착정도와 분포비의 순위는 각각 Li(I)

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년도 춘계 학술대회 개요집
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• pp.33-35
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• 2006

The interactions between Cu/Sn-Ag-(Cu) and Sn-Ag-(Cu)/Ni interfacial reactions were studied during isothermal aging at $150^{\circ}C$ for up to 1000h using Cu(ENIG)/Sn-3.5Ag-(0.7Cu)/Cu(ENIG) sandwich solder joints. A typical scallop-type Cu-Sn intermetallic compound (IMC) layer formed at the upper Sn-Ag/Cu interface after reflowing, whereas a $(Cu,Ni)_6Sn_5$ IMC layer was observed at the Sn-Ag/ENIG interface. The Cu in the $(Cu,Ni)_6Sn_5$ IMC layer formed on the Ni side was sourced from the dissolution of the opposite Cu metal pad or Cu-Sn IMC layer. When the dissolved Cu arrived at the interface of the Ni pad, the $(Cu,Ni)_6Sn_5$ IMC layer formed on the Ni interface, preventing the Ni pad from reacting with the solder. Although a long isothermal aging treatment was performed at $150^{\circ}C$, no Ni was detected in the Cu-Sn IMC layer formed on the Cu side. Compared to the single Sn-Ag/ENIG solder joint, the formation of the $(Cu,Ni)_6Sn_5$ IMC layer of the Cu/sn-Ag/ENIG sandwich joint effectively retarded the Ni consumption from the electroless Ni-P layer.

• 자원리싸이클링
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• 제20권4호
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• pp.58-64
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• 2011

고온에서 PCB 처리를 통한 Au, Ag와 같은 귀금속뿐 아니라 Ni과 같은 주요 회유금속을 회수하기 위한 기초연구로서 CaO-$Al_2O_3$(-$SiO_2$) 및 CaO-$SiO_2$-$CaF_2$ 슬래그를 이용하여 Au, Ag, Ni의 회수거동올 관찰하였다. 슬래그 투입 없이 PCB만으로 용융실험을 수행한 결과 PCB는 거의 용융되지 않았으며, 이로부터 유도전류를 이용한 용융을 촉진할 뿐 아니라 유가금속의 회수를 위해서는 Cu와 갇은 적절한 base metal이 필요함을 확인하였다. 본 연구결과, PCB/Cu ratio는 1 이하가 바람직할 것으로 생각된다. CaO-$Al_2O_3$(-$SiO_2$) 및 CaO-$SiO_2$-$CaF_2$ 슬래그를 투입한 결과, $CaF_2$를 함유하는 fluorosilicate계 슬래그가 calcium aluminate계 슬래그보다 융점과 점도가 낮게 제어되었으며, 이로부터 Au, Ag, Ni의 높은 분배비를 얻을 수 있었다. 점도가 낮은 $CaF_2$ 함유 슬래그 적용 시 높은 유가금속 회수율은 슬래그 내에서 각 금속입자의 등속침강속도가 상승하기 때문인 것으로 평가되었다.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 추계학술발표대회 논문집
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• pp.350-355
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• 2009

The crysralline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more high efficiency and low cost endeavors many crystalline solar cells. The fabricaion process of high efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/AG contact, This metal contacts have only been used in limited areas in spite of their good srability and low contact resistance because of expensive materials and process. Commercial solar cells with screen-printed solar cells formed by using Ag paste suffer from loe fill factor and high contact resistance and low aspect ratio. Ni and Cu metal contacts have been formed by using electroless plating and light-induced electro plating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on 0.2~0.6${\Omega}$ cm, $20{\times}20mm^2$, CZ(Czochralski) wafer.