• Journal of the Korean Institute of Telematics and Electronics S
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• v.34S no.10
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• pp.132-140
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• 1997

This paper proposes systolic array architectures for compuataion of the 1-D and 2-D discrete wavelet transform (DWT). The proposed systolic array for compuataion of the 1-D DWT consists of L processing element (PE) arrays, where the PE array denotes the systolic array for computation of the one level DWT. The proposed PE array computes only the product terms that are required for further computation and the outputs of low and high frequency filters are computed in alternate clock cycles. Therefore, the proposed architecuter can compute the low and high frequency outputs using a single architecture. The proposed systolic array for computation of the 2-D DWT consists of two systolic array architectures for comutation of the 1-D DWT and memory unit. The required time and hardware cost of the proposed systolic arrays are comparable to those of the conventional architectures. However, the conventional architectures need extra processing units whereas the proposed architectures fo not. The proposed architectures can be applied to subband decomposition by simply changing the filter coefficients.

• ETRI Journal
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• v.35 no.4
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• pp.594-602
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• 2013

This paper proposes printed organic one-time programmable read-only memory (PROM). The organic PROM cell consists of a capacitor and an organic p-type metal-oxide semiconductor (PMOS) transistor. Initially, all organic PROM cells with unbroken capacitors store "0." Some organic PROM cells are programmed to "1" by electrically breaking each capacitor with a high voltage. After the capacitor breaking, the current flowing through the PROM cell significantly increases. The memory data is read out by sensing the current in the PROM cell. 16-bit organic PROM cell arrays are fabricated with the printed organic PMOS transistor and capacitor process. The organic PROM cells are programmed with -50 V, and they are read out with -20 V. The area of the 16-bit organic PROM array is 70.6 $mm^2$.

• The KIPS Transactions:PartA
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• v.12A no.3 s.93
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• pp.223-228
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• 2005

Several researchers have pointed out that the energy consumption in memory takes a dominant fraction on the energy budget of a whole embedded system. This applies to the embedded Java virtual machine tn, and to develop a more energy-efficient JVM it is absolutely necessary to optimize the energy usage in Jana memory. In this paper we have analyzed the logical memory access pattern in JVM as it executes numerous number of bytecode instructions while running a Java program. The access pattern gives us an insight how to design and select a suitable memory technology for Java memory. We present the memory access pattern for the three logical data spaces of JVM: heap, operand stack, and local variable array. The result saws that operand stack is accessed most frequently and uniformly, whereas heap used least frequently and non-uniformly among the three. Both heap and local variable array are accessed mostly in read-only fashion, but no remarkable difference is found between read and write operations for operand stack usage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.31-38
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• 2010

This paper presents the design of a graphic memory for QVGA-scale LCD Driver IC (LDI). The graphic memory is designed based on the pseudo-SHAM for the purpose of small area, and the memory cell structure is designed using a bit line partitioning method to improve sensing characteristics and drivabilties in the line-read operation. Also, a collision protection circuit using C-gate is designed to control collisions between read/write operations and self-refresh/line-read operations effectively. The graphic memory circuit has been designed in transistor level using $0.18{\mu}m$ CMOS technology library and the operations of the graphic memory have been verified using Hspice. The results show that the bit-bitb line voltage difference, ${\Delta}V$ increases by 40%, the charge sharing time between bit and bitb voltages $T_{CHGSH}$ decreases by 30%, and the current during line-read decreases by 40%.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.806-809
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• 2007

SRAM cell array and peripheral circuits on display panel are designed using LTPS process. To overcome low yield of SOP, high speed parallel fault detection circuitry for memory cells is designed at local I/O lines with minimal overhead for efficient memory cell redundancy replacement. Normal read/write and parallel test read/write are simulated and verified.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.73-76
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• 2010

A two-facet approach was used to investigate the parametric performance of functional high-speed DDR3 (Double Data Rate) DRAM (Dynamic Random Access Memory) die placed in different types of BGA (Ball Grid Array) packages: wire-bonded BGA (FBGA, Fine Ball Grid Array), flip-chip (FCBGA) and lead-bonded $microBGA^{(R)}$. In the first section, packaged live DDR3 die were tested using automatic test equipment using high-resolution shmoo plots. It was found that the best timing and voltage margin was obtained using the lead-bonded microBGA, followed by the wire-bonded FBGA with the FCBGA exhibiting the worst performance of the three types tested. In particular the flip-chip packaged devices exhibited reduced operating voltage margin. In the second part of this work a test system was designed and constructed to mimic the electrical environment of the data bus in a PC's CPU-Memory subsystem that used a single DIMM (Dual In Line Memory Module) socket in point-to-point and point-to-two-point configurations. The emulation system was used to examine signal integrity for system-level operation at speeds in excess of 6 Gb/pin/sec in order to assess the frequency extensibility of the signal-carrying path of the microBGA considered for future high-speed DRAM packaging. The analyzed signal path was driven from either end of the data bus by a GaAs laser driver capable of operation beyond 10 GHz. Eye diagrams were measured using a high speed sampling oscilloscope with a pulse generator providing a pseudo-random bit sequence stimulus for the laser drivers. The memory controller was emulated using a circuit implemented on a BGA interposer employing the laser driver while the active DRAM was modeled using the same type of laser driver mounted to the DIMM module. A custom silicon loading die was designed and fabricated and placed into the microBGA packages that were attached to an instrumented DIMM module. It was found that 6.6 Gb/sec/pin operation appears feasible in both point to point and point to two point configurations when the input capacitance is limited to 2pF.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.29B no.10
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• pp.10-18
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• 1992

This paper considers and implementation of the memory system which provides simultaneous access to pq image points of block(p$\times$q), horizontal vector(1$\times$pq)and/vertical vector(pq$\times$1) in 2-dimension image array, where p and q are design parameters. This memory system consists of an address calculation circuit, address routing circuit, data routing circuit, module selection circuit and m memory modules where m>qp. The address calculation circuit computes pq addresses in parallel by using the difference of addresses among image points. Extra module assignment circuit is not used by improving module selection circuit with routhing circuit. By using Verilog-XL logic simulator, we verify the correctness of the memory system and estimate the performance. The implemented system provides simultaneous access to 16 image points and is 6 times faster than conventional memory system.

• Proceedings of the Korea Information Processing Society Conference
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• 2004.05a
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• pp.309-312
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• 2004

임베디드 시스템은 특별한 목적을 수행하기 위해 컴퓨터 하드웨어와 소프트웨어를 결합시킨 것이다. 임베디드 시스템은 일반 데스크탑보다 작은 규모의 하드웨어에서 운영된다. 임베디드 시스템은 파워, 공간, 메모리 등의 여러 가지 환경적 요소에 제약을 받는다. 그리고 임베디드 시스템은 실시간으로 동작하기 때문에 임베디드 시스템에서 소프트웨어의 실패는 일반 데스크탑에서보다 훨씬 심각한 문제를 발생시킨다. 따라서 임베디드 시스템은 주어진 자원을 효율적으로 사용하여야 하고 임베디드 시스템의 실패율을 낮춰야만 한다. 치명적인 문제를 발생시킬 수 있는 임베디드 시스템의 실패의 원인 중 하나가 메모리에 관련한 문제이다. 임베디드 시스템 특정상 메모리 문제는 크게 하드웨어 기반의 메모리 문제와 소프트웨어 기반의 메모리 문제로 분류된다. 소프트웨어 기반의 메모리에 관련한 문제는 Memory Leak, Freeing Free Memory, Freeing Unallocated Memory, Memory Allocation Failed, Late Detect Array Bounds Write, Late Detect Freed Memory Write 등과 같은 것들이 있다. 본 논문에서는 임베디드 시스템의 메모리 관련에 대한 문제점을 파악하고 관련 툴을 연구하여 그 문제점들을 효율적으로 해결할 수 있는 기법을 점증적으로 연구하고자 한다.

• International Journal of Internet, Broadcasting and Communication
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• v.13 no.3
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• pp.104-108
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• 2021

In order to improve performance in IoT, edge computing system, a memory is usually configured in a hierarchical structure. Based on the distance from CPU, the access speed slows down in the order of registers, cache memory, main memory, and storage. Similar to the change in performance, energy consumption also increases as the distance from the CPU increases. Therefore, it is important to develop a technique that places frequently used data to the upper memory as much as possible to improve performance and energy consumption. However, the technique should solve the problem of cache performance degradation caused by lack of spatial locality that occurs when the data access stride is large. This study proposes a technique to selectively place data with large data access stride to a software-controlled cache. By using the proposed technique, data spatial locality can be improved by reducing the data access interval, and consequently, the cache performance can be improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.35-38
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• 2002

In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride， and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were $34{\AA}$, $73{\AA}$, and $34{\AA}$, respectively. The SONOS devices compared to floating gate devices have many advantages, which are a simpler cell structure, compatibility with conventional logic CMOS process and a superior scalability. For these reasons, the introduction of SONOS device has stimulated. In the conventional SONOS devices, Modified Folwer-Nordheim (MFN) tunneling and CHE injection for writing require high voltages, which are typically in the range of 9 V to 15 V. However CHE injection in our devices was achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The memory window of about 3.2 V and the write speed of $100{\mu}s$ were obtained. Also, the disturbance and drain turn-on leakage during CHE injection were not affected in the SONOS array. These results show that CHE injection can be achieved with a low voltage and single power supply, and applied for the high speed program of the SONOS memory devices.