• 한국재료학회지
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• 제31권8호
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• pp.445-449
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• 2021

Zintl compound Mg₃Sb₂ is a promising candidate for efficient thermoelectric material due to its small band gap energy and characteristic electron-crystal phonon-glass behavior. Furthermore, this compound enables fine tuning of carrier concentration via chemical doping for optimizing thermoelectric performance. In this study, nominal compositions of Mg_3.8Sb_2-xTe_x (0 ≤ x ≤ 0.03) are synthesized through controlled melting and subsequent vacuum hot pressing method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) are carried out to investigate phase development and surface morphology during the process. It should be noted that 16 at. % of excessive Mg must be added to the system to compensate for the loss of Mg during melting process. Herein, thermoelectric properties such as Seebeck coefficient, electrical conductivity, and thermal conductivity are evaluated from low to high temperature regimes. The results show that Te substitution at Sb sites effectively tunes the majority carriers from holes to electrons, resulting in a transition from p to n-type. At 873 K, a peak ZT value of 0.27 is found for the specimen Mg_3.8Sb_1.99Te_0.01, indicating an improved ZT value over the intrinsic value.

• 한국재료학회지
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• 제32권6호
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• pp.287-292
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• 2022

Magnesium-antimonide is a well-known zintl phase thermoelectric material with low band gap energy, earth-abundance and characteristic electron-crystal phonon-glass properties. The nominal composition Mg_3.8-xZn_xSb₂ (0.00 ≤ x ≤ 0.02) was synthesized by controlled melting and subsequent vacuum hot pressing method. To investigate phase development and surface morphology during the process, X-ray diffraction (XRD) and scanning electron microscopy (SEM) were carried out. It should be noted that an additional 16 at. % Mg must be added to the system to compensate for Mg loss during the melting process. This study evaluated the thermoelectric properties of the material in terms of Seebeck coefficient, electrical conductivity and thermal conductivity from the low to high temperature regime. The results demonstrated that substituting Zn at Mg sites increased electrical conductivity without significantly affecting the Seebeck coefficient. The maximal dimensionless figure of merit achieved was 0.30 for x = 0.01 at 855 K which is 30% greater than the intrinsic value. Electronic flow properties were also evaluated and discussed to explain the carrier transport mechanism involved in the thermoelectric properties of this alloy system.

• 한국산업융합학회 논문집
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• 제25권4_2호
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• pp.621-626
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• 2022

Tungsten is a high melting point metal unlike other steel materials, and it is difficult to manufacture because of its high melting temperature. In this study, pressure sintering process method was applied to manufacture the tungsten materials at low temperature. Therefore, it is necessary to densify the sintered material by using a sintering additive. Studies have been conducted on how the amount of titanium for sintering tungsten affects the mechanical properties of tungsten in this study. In order to secure the densification mechanism of tungsten powder during the sintering process, the characteristics of the sintered tungsten material according to the change of titanium content were evaluated. It was investigated the relationship between sintering parameters and mechanical properties for densification of microstructures. The sintered tungsten materials according to sintering additive content showed high sintered density (about 16.31g/cm³) and flexural strength (about 584 MPa) when the content of sintering additive was 3 wt%. However, as the content of the sintering additive increases, mechanical property of flexural strength is decreased, and the porosity is increased due to the heterogeneous sintering around titanium.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.376-376
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• 2012

Semiconductor nanowires (NWs) are future building block for nano-scale devices. Especially, Ge NWs are fascinated material due to the high electrical conductivity with high carrier mobility. It is strong candidate material for post-CMOS technology. However, thermal stability of Ge NWs are poor than conventional semiconductor material such as Si. Especially, when it reduced size as small as nano-scale it will be melted around CMOS process temperature due to the melting point depression. Recently, Graphene have been intensively interested since it has high carrier mobility with single atomic thickness. In addition, it is chemically very stable due to the $sp^2$ hybridization. Graphene films shows good protecting layer for oxidation resistance and corrosion resistance of metal surface using its chemical properties. Recently, we successfully demonstrated CVD growth of monolayer graphene using Ge catalyst. Using our growth method, we synthesized Ge/graphene core/shell (Ge@G) NW and conducted it for highly thermal stability required devices. We confirm the existence of graphene shell and morphology of NWs using SEM, TEM and Raman spectra. SEM and TEM images clearly show very thin graphene shell. We annealed NWs in vacuum at high temperature. Our results indicated that surface melting phenomena of Ge NWs due to the high surface energy from curvature of NWs start around $550^{\circ}C$ which is $270^{\circ}C$ lower than bulk melting point. When we increases annealing temperature, tip of Ge NWs start to make sphere shape in order to reduce its surface energy. On the contrary, Ge@G NWs prevent surface melting of Ge NWs and no Ge spheres generated. Furthermore, we fabricated filed emission devices using pure Ge NWs and Ge@G NWs. Compare with pure Ge NWs, graphene protected Ge NWs show enhancement of reliability. This growth approach serves a thermal stability enhancement of semiconductor NWs.

• Parasites, Hosts and Diseases
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• 제51권6호
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• pp.651-656
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• 2013

Human schistosomiasis caused by Schistosoma japonicum and Schistosoma mekongi is a chronic and debilitating helminthic disease still prevalent in several countries of Asia. Due to morphological similarities of cercariae and eggs of these 2 species, microscopic differentiation is difficult. High resolution melting (HRM) real-time PCR is developed as an alternative tool for the detection and differentiation of these 2 species. A primer pair was designed for targeting the 18S ribosomal RNA gene to generate PCR products of 156 base pairs for both species. The melting points of S. japonicum and S. mekongi PCR products were $84.5{\pm}0.07^{\circ}C$ and $85.7{\pm}0.07^{\circ}C$, respectively. The method permits amplification from a single cercaria or an egg. The HRM real-time PCR is a rapid and simple tool for differentiation of S. japonicum and S. mekongi in the intermediate and final hosts.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.913-916
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• 2001

From 1994 the cooperation between NEU of China and MJU of South Korea for study of ReBaCuO (Re=Rare earth elements) superconductors has been carried out. The progress has been got in following projects. Critical current density ($J_c$) of YBaCuO superconductor prepared by Melting Textured Growth (MTG) was improved. In the preparation of textured YBaCuO, 20 wt.% of YBaCuO 211 phase was added, which would be climactic for the microcracks in the textured YBaCuO. The effects of the 211 phase and Ag content on the superconductivity were studied and discussed in detail. The improved $J_c$ value was reached to 8$\times$10^4 A/cm^2 (77K,0T). Single phase $YbBa_{2}Cu_{3}O_{x}$ superconductor was sintered by the traditional powder metallurgical method, and its reaction process was studied. In recent years, NdBaCuO superconductor is being performed. The behavior of $Nd_{4}Ba_{2}Cu_{2}O_{10}$(Nd422 phase) and the solid solubility, x in the superconductor $Nd_{1+x}Ba_{2-x}Cu_{3}O_{y}$ by the heat treatment in the low oxygen partial pressure (1%) or Ar at $950{\circ}C$ were investigated. The zone-melting process was used to make oriented NdBaCuO superconductor in order to increase the critical current density.

• 한국전자통신학회논문지
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• 제15권2호
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• pp.313-318
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• 2020

300도 이상의 높은 용융점을 갖는 소위 엔지니어링 플라스틱은 기구적인 강성과 내화학성 및 마찰 및 마모성능이 우수하여 여러 산업에서 금속을 대체하는 소재로 각광받고 있다. 본 연구에서는 용융적층모델링 공법을 기반으로 하는 3D 프린터에서 높은 용융점을 갖는 엔지니어링 플라스틱을 조형할 수 있도록 방열특성이 우수한 3D 프린터 nozzle부의 구조를 설계하고 이를 해석적으로 검증하였다. 높은 온도로 가열되는 heat block과 필라멘트가 이송되는 nozzle상부 간의 단열 및 신속한 냉각을 위하여, 열전도계수가 낮은 열차단부(heat brake부)를 2중으로 구성하였고, 열차단부에 생성되는 열이 냉각핀을 통해 대기에 의해 냉각되는 구조를 적용하였다. 개선된 nozzle부 구조설계를 통해 종래 3D 프린터의 BCnozzle과 비교할 때, heat sink부에서의 온도를 50% 가량 낮출 수 있었으며, heat block에 직접적으로 연결된 heat brake부 최종단의 정상상태 온도를 14% 가량 낮출 수 있었다.

• 한국분말재료학회지
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• 제25권6호
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• pp.475-481
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• 2018

Selective laser melting (SLM), a type of additive manufacturing (AM) technology, leads a global manufacturing trend by enabling the design of geometrically complex products with topology optimization for optimized performance. Using this method, three-dimensional (3D) computer-aided design (CAD) data components can be built up directly in a layer-by-layer fashion using a high-energy laser beam for the selective melting and rapid solidification of thin layers of metallic powders. Although there are considerable expectations that this novel process will overcome many traditional manufacturing process limits, some issues still exist in applying the SLM process to diverse metallic materials, particularly regarding the formation of porosity. This is a major processing-induced phenomenon, and frequently observed in almost all SLM-processed metallic components. In this study, we investigate the mechanical anisotropy of SLM-produced 316L stainless steel based on microstructural factors and highly-oriented porosity. Tensile tests are performed to investigate the microstructure and porosity effects on mechanical anisotropy in terms of both strength and ductility.

• 한국산학기술학회논문지
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• 제19권12호
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• pp.25-31
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• 2018

선택적 레이저 용융 (Selective Laser Melting) 기법은 금속 소재를 다루는 대표적인 3D 프린팅 기법중의 하나이다. SLM 기법으로 제작되는 구조물의 특성을 좌우하는 주요 제작 인자로는 구조물의 적층 제작 방향, 레이저 파워, 레이저 스캔 스피드 및 스캔 간격 등을 고려할 수 있다. 이번 연구에서는 AlSi10Mg 합금을 대상 소재로 하여, 인장 시편의 제작 방향, 레이저 스캔 스피드 및 스캔 간격을 변수로 하여, 인장특성 결과를 비교 분석하였다. 인장특성으로는 항복 응력, 인장강도 및 연신율을 고려하였다. 시험결과로부터, 인장 시편의 제작 방향 기준으로 0도, 45도, 90도 순서로 항복 응력 값이 낮아짐을 확인하였다. 레이저 스캔 스피드 기준으로는 1870mm/min에서 가장 큰 항복 응력값을 보였으며, 스캔 스피드가 낮아질수록 항복 응력 크기도 줄어들었다. 레이저 스캔 간격 기준으로, 그 크기가 증가할수록 항복 응력값은 증가하지만, 다른 시험 기준에 비해 그 변화폭은 가장 적었다. 인장강도 및 연신율은 시험조건에 따른 명확한 경향성을 파악하기 어려웠다.

• Journal of Welding and Joining
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• 제30권1호
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• pp.78-84
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• 2012

Due to the inherent dimensional uncertainty, tolerances accumulate in the final assembly. Tolerance accumulation has serious effect on the performance of ECV assembly. This paper proposes a method of tolerance accumulation analysis using Monte Carlo simulation, which includes welding process in assemble process. This method can predict the final tolerance distributions of the completed assembly with the prescribed statistical tolerance distribution of each part to be assembled. With the inclusion of welding, another dimensional uncertainties due to partial melting is to be accounted as well. Partial melting of projection height was included in the tolerance propagation analysis. Verification of the proposed method was performed by making use of Monte Carlo simulation. Monte Carlo simulation results showed promising results in that we can predict the final tolerance distributions in advance before actual assembly process of precision machinery.