• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.396-401
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• 2000

In order to accurately measure the high voltage of 22.9[kV] power distribution lines we investigated the temperature dependence of measuring voltage on the number of stack layers in the voltage measurement system made from single and stack voltage divider capacitors (22, 44, 66 layers, respectively). Temperature coefficient of dielectric constant(TC$\varepsilon_{{\gamma}}$/)of voltage divider capacitors which were fabricated by BaTi $O_3$system ceramics showed the variations from -2.28% to +1.69% in the range of -25[$^{\circ}C$] ~50[$^{\circ}C$]) was decreased with increasing of stack number and the stack element of 66 layers showed the least error of $\pm$0.87%or of $\pm$0.87%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1178-1185
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• 2004

In the atmosphere of $N_2$ gas, BaZ $r_{0.08}$ $Ti_{0.92}$ $O_3$ polycrystal was grown by floating zone technique using BaZ $r_{0.08}$ $Ti_{0.92}$ $O_3$ ceramics as a feed and SrTi $O_3$(1l0) single cystal as a seed. The dielectric constant and loss at 10 kHz, 100 kHz, and 1 MHz for the as-grown sample were measured as a function of temperature in the temperature range between -10$0^{\circ}C$ and 150 $^{\circ}C$ to find a dielectric peak with frequency dispersion at Curie point. The hysteresis loop showed that the grown sample had very small polarization which was 0-0.01 $\mu$C/$\textrm{cm}^2$ for the applied dc-electric fields from -7 kV/cm to +7 kV/cm. However, the normal hysteresis loop was appeared after oxygen annealing. The electric-field dependence of the dielectric constant for both the as-grown and the post-annealed samples was studied by measuring the dielectric constants as a function of the biased-electric fields and their tunability was figured out from it at room temperature(27 $^{\circ}C$) and cryotemperature( -73$^{\circ}C$). Tunability for the as-grown sample was 51 % and the figure of merit 20.4 at 10kHz with the biased electric-field of 12 kV/cm. The tunability for the grown sample may be increased up to 80 % if the electric field of 25 kV/cm is applied. Tunability for the post-annealed sample was 41 % and the figure of merit 10.3 at 10 kHz with the biased electric-field of 12 kV /cm. Post-annealing improved the crystallinity of the as-grown sample but decreased its tunability.ability.

• Composites Research
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• v.18 no.3
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• pp.14-20
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• 2005

This paper presents a study on the permittivities of the carbon black/epoxy composite at microwave frequency. The measurements were performed at the frequency band of $1\;GHz\~18\;GHz$. The experimental data show that the complex permittivities of composites depend strongly on the natures and concentrations of the carbon black dispersion. The frequency characteristics of dielectric constants and ac conductivities of composites show the good conformity with descriptions of the percolation theory, satisfying the general scaling relation. The measuring frequency band is over the critical frequency, below that the ac conductivities of composites are constant to the frequency. The values of dielectric constants and ac conductivities have consistent relationships with the carbon black concentration. The A new scheme, that is a branch of Lichtenecker-Rother formula, is proposed to obtain a mixing law to describe the complex permittivities of the composites as function frequency and concentration of carbon black.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.2
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• pp.214-217
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• 2013

In this paper, a waveguide-type resonator with a slot is proposed to measure permittivity of thin film from resonant frequency shifting by an attached MUT(Material Under Test). The MUT on the slot shifts resonant frequency by perturbation of electromagnetic field. Amount of shifting resonance frequency is dependent on the permittivity of MUT, and that relation is obtained from numerical simulation. The measured relative permittivity of a thin film with thickness of $65{\mu}m$ is 3.3492 with standard error of ${\pm}0.0605$ in the frequency range of 2 GHz to 3 GHz. Also the proposed method is compared with other measuring methods such as dielectric resonator and waveguide probe systems.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1777-1779
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• 1999

SMM is a dynamic noncontact electric force microscopy that allows simultaneous access to the electrical properties of molecular system such as surface potential, surface charge, dielectric constant and conductivity along with the topography. SNOAM is a new tool for surface imaging which was introduced as one application of AFM. Operated with non-contact forces between the optical fiber and sample as well as equipped with the piezoscanners, the instrument reports on surface topology without damaging or modifying the surface for measuring of optical characteristic in the films. Here we report our recent results of its application to nanoscopic study of domain structures and electrical functionality in organic thin films by SMM. Furthermore, we have illustrated the SNOAM image in obtaining the merocyanine dye films as well as the optical image.

• Journal of Information Display
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• v.11 no.4
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• pp.165-168
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• 2010

A solution-processed multicomponent oxide, yttrium hafnium zinc oxide (YHZO), was synthesized and deposited as a gate insulator. The YHZO film annealed at $600^{\circ}C$ contained an amorphous phase based on the results of thermogravimetry, differential thermal analysis, and X-ray diffraction. The electrical characteristics of the YHZO film were analyzed by measuring the leakage current. The high dielectric constant (16.4) and high breakdown voltage (71.6 V) of the YHZO films resulted from the characteristics of $HfO_2$ and $Y_2O_3$, respectively. To examine if YHZO can be applied to thin-film transistors (TFTs), indium gallium zinc oxide TFTs with a YHZO gate insulator were also fabricated. The desirable characteristics of the YHZO films when used as a gate insulator show that the limitations of the general binary-oxide-based materials and of the conventional vacuum processes can be overcome.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.327-330
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• 2000

The scanning Maxwell-stress microscopy (SMM) is a dynamic noncontact electric force microscopy that allows simultaneous access to the electrical properties of molecular system such as surface potential, surface charge, dielectric constant and conductivity along with the topography. The Scanning near-field optical / atomic force microscopy (SNOAM) is a new tool for surface imaging which was introduced as one application of the atomic force microscope (AFM). Operated with non-contact forces between the optical fiber and sample as well as equipped with the piezoscanners, the instrument reports on surface topology without damaging or modifying the surface for measuring of optical characteristic in the films. We report our recent results of its application to nanoscopic study of domain structures and electrical functionality in organic thin films by SMM. Furthermore, we have illustrated the SNOAM image in obtaining the merocyanine dye films as well as the optical image.

• Korean Journal of Optics and Photonics
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• v.27 no.6
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• pp.229-232
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• 2016

Metamaterials operating in the terahertz frequency range show promising potential for use in highly sensitive microbial sensors that are capable of effectively detecting microorganisms in the ambient environment. We were able to detect extremely small numbers of microorganisms by measuring the differential transmission spectra (DTS) of the metamaterial resonances. This was possible because their sizes are on the same scale as the microgaps of the terahertz metamaterials. DTS depend critically on the number of microorganisms placed in the gap area, and their dielectric constant. In addition, these metamaterial microbial sensors are reusable, because the microorganisms can be completely removed by fungicide solution. Finite-difference time-domain simulations successfully reproduce our experimental data.

• Electrical & Electronic Materials
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• v.10 no.5
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• pp.434-439
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• 1997

It this paper, the piezoelectric and electro-induced strain properties of (P $b_{1-}$2x/3/B $i_{x}$ )[N $i_{1}$3/N $b_{2}$3/)$_{0.4}$( $Ti_{0.6}$Z $r_{0.4}$)$_{0.6}$] $O_3$ceramics (x=0, 0.005, 0.02) were investigated with the substitution of B $i^{3+}$, and the feasibility of the application for bimorph actuator was evaluated by measuring the dynamic properties of the piezoelectric bimorph fabricated with above ceramics. Dielectric constant was enhanced with the increase of B $i^{3+}$ substitution, and appeared the maximum value of 5032 at x=0.01 composition. Increasing the substitution of B $i^{3+}$, the electromechanical coefficient( $k_{p}$ , $k_{31}$ ) was increased up to the substitution of 0.5 mol% B $i^{3+}$, showed the value of 0.656, 0.439, respectively. The piezoelectric constant( $d_{33}$ $d_{31}$ ) had the highest value of 344, 825 with the substitution of 0.5 mol% B $i^{3+}$. The strain, generated by 60 Hz AC electric field, had the largest value of 1200($\times$10$^{-6}$ $\Delta$1/1) in the composition with the substitution of 0.5 mol% B $i^{3+}$. The dynamic properties of the bimorph actuator, fabricated with the composition substitution of 0.5 mol% B $i^{3+}$, showed the largest value of 325 $\mu$m at $\pm$150 V square pulse. square pulse.are pulse..