• 한국정밀공학회지
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• 제22권2호
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• pp.46-52
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• 2005

The sapphire wafer was polished by the implementation of the surface machining technology based on nano-tribology, The removal process has been performed by grinding, lapping and chemical-mechanical polishing. For the chemical mechanical polishing process, the chemical reaction between the slurry and sapphire wafer was investigated in terms of the change of Zeta-potential between two materials. The Zeta-potential was -4.98 mV without the slurry in deionized water and was -37.05 mV for the slurry solution. By including the slurry into the deionized water the Zeta-potential -29.73 mV, indicating that the surface atoms of sapphire become more repulsive to be easy to separate. The average roughness of the polished surface of sapphire wafer was ranged to 1∼4$\AA$.

• 한국펄프종이공학회:학술대회논문집
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• 한국펄프종이공학회 2005년도 추계학술발표논문집
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• pp.187-196
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• 2005

Newsprint is quantitatively the most important printing paper. The demands for its printability are continuously increasing. It is well known that the relationship between the physically tested paper properties and newspaper printability is unsatisfactory. In order to improve the printing quality of Korean newsprint, the printability coefficients such as maximum ink requirement($Y_{max}$), print through were investigated. Kinds of Korean newspapers and three kinds of news printing inks were tested by IGT printability tester. Experiment condition of IGT printability tester was 14 steps between $0.2{\sim}2.8g/m^2$ of ink requirement, printing pressure was .200 N and printing velocity was 1m/sec. The properties of newspaper samples(basis weight, bulk density, roughness, smoothness, porosity, i. e.) were examined in accordance with KS and TAPPI standard testing methods. The result of this study are respected for usefulness printing quality management of Korean newsprint.

• 수산해양기술연구
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• 제33권4호
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• pp.360-369
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• 1997

We calculated the residual current forced by buoyancy, wind stress, and tidal stress in the Chinhae Bay using a three-dimensional diagnostic model. The calculated current was also compared with the observation. The flow directs outward from the central area of the Bay in the upper layer, and also forms eddy-shape stucture in the upper and middle layers. The flow of bottom layer shows an opposite pattern compared to those of top and middle layers. The maximum speed was 6.05 em/see (September) and 3.49 cm/sec (November) in the upper layer, and 4.39 cm/sec on both month in the middle layer. The Kinetic energy of November (8.39xlO' W) was larger than that of September (1.24xlO 'W), mainly resulting from larger buoyancy effect in September. In spite of the roughness of the grid size(1 km) and wind date, the calculated flow shows eorrelation(r=0.71) with the observation. We expect that the correlation be increased by increased by adopting the fine grid and the variable coefficients of diffusion and viscosity.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.72-74
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• 2003

We fabricated textured Ag substrates for coated conductor and evaluated the effects of annealing temperature on microstructural evolution, texture formation, and surface morphology. A strong {110}〈110〉 textured Ag substrate was obtained by cold rolling and annealing at 80$0^{\circ}C$: the full-width at half-maximum(FWHM) value of {110}〈110〉 poles was as sharp as 10$^{\circ}$. Surface morphology was evaluated by using Atomic force microscopy(AFM). Root-mean-square(RMS) roughness of the substrate annealed at 80$0^{\circ}C$ was 39.2 nm. The substrate of strong texture and smooth surface, fabricated in our study, is considered to be suitable for use as a substrate for deposition of superconductor films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 기술교육전문연구회
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• pp.31-34
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• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing(CMP) process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum 89 arcses. The surfaces of sapphire wafers were mechanically affected by residual stress and surface default. Sapphire wafers's waveness has higher abrasion rate in the edge of the wafer than its center due to Newton's Ring interference.

• 폴리머
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• 제37권2호
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• pp.196-203
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• 2013

Surface modification of meta-aramid fibers was performed by phosphoric acid treatment. Surface morphology and element composition of untreated and treated fibers were analyzed by scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). Effects of surface modification on the mechanical strength of aramid papers made from meta-aramid fibers and fibrid were investigated. Surface modification conditions were optimized by response surface analysis (RSA). Results show that phosphoric acid treatment increases the surface roughness and oxygen content of aramid fibers. They improve the interface bonding strength between aramid fibers and fibrid, which improves the tensile strength of aramid papers. The results of response surface analysis indicate that the tensile strength of aramid papers increases by 47.5% and reaches the maximum when meta-aramid fibers are treated with 21.1wt% phosphoric acid solution at $39.3^{\circ}C$ for 36.7 min.

• 대한기계학회논문집A
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• 제28권1호
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• pp.85-91
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• 2004

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum of 89 arcsec. The surfaces of sapphire wafer were mechanically affected by residual stress during the polishing process. The wave pattern of optical interference of sapphire wafer implies higher abrasion rate in the edge of the wafer than its center from the Newton's ring.

• 한국표면공학회지
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• 제37권3호
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• pp.164-168
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• 2004

Polycrystalline silicon thin films were deposited by inductively coupled plasma (ICP) assisted magnetron sputtering using a gas mixture of Ar and $H_2$ on a glass substrate at $250^{\circ}C$. At constant Ar mass flow rate of 10 sccm, the working pressure was changed between 10mTorr and 70mTorr with changing $H_2$ flow rate. The effects of RF power applied to ICP coil and $Ar/H_2$ gas mixing ratio on the properties of the deposited Si films were investigated. The crystallinity was evaluated by both X-ray diffraction and Raman spectroscopy. From the results of Raman spectroscopy, the crystallinity was improved as hydrogen mixing ratio was increased up to$ Ar/H_2$=10/16 sccm; the maximum crystalline fraction was 74% at this condition. When RF power applied to ICP coil was increased, the crystallinity was also increased around 78%. In order to investigate the surface roughness of the deposited films, Atomic Force Microscopy was used.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1486-1489
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• 2009

Micro wall is fabricated using iterative screen printing that it is able to fabricate the pattern as low cost, simple process, formation of pattern at large area on the various substrates. In the process of micro wall fabrication using screen printing, the printing result with pressure change in process and improvement of surface roughness using hydrophillic plasma treatment are included. Height of micro wall increase linearly and precision of iteration is very high. Error rate of printed pattern width is very high, but change rate of width is under 10 %. Fabricated micro pattern have minimum width $48.75{\mu}m$ and maximum height $75.45{\mu}m$ with aspect ratio 1.55.

• KIEE International Transactions on Electrophysics and Applications
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• 제3C권6호
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• pp.241-245
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• 2003

ZnO thin films on (l00) p-type Si and sapphire substrates have been deposited by a pulsed laser deposition technique using an Nd:YAG laser with a wavelength of 266 nm. The influence of the deposition parameters such as oxygen pressure, substrate temperature and laser energy density on the properties of the grown films was studied. The experiments were performed for substrate temperatures in the range of 200∼50$0^{\circ}C$ and oxygen pressure in the range of 100∼700 sccm. All of the films grown in this experiment show strong c-axis orientation with (002) textured ZnO peak. With increasing substrate temperature, the FWHM (full width at half maximum) and surface roughness were decreased. In the case of using sapphire substrate, the intensity of PL spectra increased with increasing ambient oxygen flow rate. We investigated the structural and morphological properties of ZnO thin films using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM).