• Journal of Powder Materials
• /
• v.17 no.6
• /
• pp.494-498
• /
• 2010

The p-type thermoelectric compounds of $Bi_2Te_3$ based doped with 3wt% Te were fabricated by a combination of rapid solidification and spark plasma sintering (SPS) process. The effect of holding time during spark plasma sintering (SPS) on the microstructure and thermoelectric properties were investigated using scanning electron microscope (SEM), X-ray diffraction (XRD) and thermoelectric properties. The powders as solidified consisted of homogeneous thermoelectric phases. The thermoelectric figure of merit measured to be maximum ($3.41{\times}10^{-3}/K$) at the SPS temperature of $430^{\circ}C$.

• Korean Journal of Materials Research
• /
• v.8 no.5
• /
• pp.408-412
• /
• 1998

Thermoelectric properties of Bi$_{2}$(Te$_{1-x}$Se$_{ x}$)$_{3}$(0.05$\leq$x$\leq$0.25) prepared by mechanical alloying and hot pressing, were investigated. Contrary to the p-type behavior of single crystals, the hot-pressed Bi$_{2}$(Te$_{1-x}$Se$_{ x}$)$_{3}$ exhibited ntype conduction without addition of donor dopant. When $Bi_2(Te_{0.85}Se_{0.15})_3$powders were annealed in (50% $H_2$ + 50% Ar) atmosphere, the hot-pressed specimen exhibited a positive Seebeck coefficient due to the reduction of the electron concentration by removal of the oxide layer on the powder surface and annealing-out of the excess Te vacancies. Among the Bi$_{2}$(Te$_{1-x}$Se$_{ x}$)$_{3}$fabricated by mechanical alloying and hot pressing, $Bi_2(Te_{0.85}Se_{0.15})_3$ exhibited a maximum figure-of-merit of 1.92 $\times$ $lO^{-3}$/K.

• Journal of the Korean Institute of Telematics and Electronics C
• /
• v.34C no.12
• /
• pp.37-42
• /
• 1997

A new temperature and supply-insensitive CMOS current reference circuit was designed and tested. Te temperature insensuitivity was achieved by eliminating the mobility dependence term through the multiplication of two current components, one which is proportional to mobility and the other which is inversely proportional to mobility, by using a newly designed CMOS square root circuit. The CMOS sqare root circuit was derived from its bipolar counterpart by operating the MOS transistors in the subthreshold region. The supply insensitivity was achieved by using an internal voltage generator. Te test chip was designed ans sent out for fabrication by using a 2.mu.m double-poly double-metal n-well CMOS technology. When an external voltage source was used for the square root circuit, the maximum variation and the average temperature sensitivity were measured to be 3% and 21.4ppm/.deg.C, respectively, for the temperature range of -15~130.deg.C. The maximum current variation with supply voltage was measured to be 3% within the commerical supply voltage range of 4.5~5.5V at 30.deg. C.

• Journal of the Korean Chemical Society
• /
• v.28 no.2
• /
• pp.79-85
• /
• 1984

The ionic association constant(K) of 2,4,6, N-tetramethyl pyridinium iodide (TeMPI) in 95 volume percentage ethanol-water mixture were determined by a modified UV and conductance method at $25^{\circ}C$ to $50^{\circ}C$ under 1 to 2,000 bars. The K values increase with increasing pressure and have maximum value at $40^{\circ}C$. The partial molar volume hange (${\Delta}V$) has relatively small negative value and the absolute values of ${\Delta}$ are minimum at $40^{\circ}C$. The ion size parameter(a) of TeMPI have maximum value at $40^{\circ}C$. {\Delta}H^{\circ}$ values are zero, positive and negative at 40^{\circ}C$, $25^{\circ}C$ and $50^{\circ}C$ respectively. Other thermodynamic parameters such as the changes of standard entropy ({\Delta}S^{\circ}$) and free energy {\Delta}G^{\circ}$ were evaluated. From these experimental results, we came to conclusion that TeMPI is stabilized by the elevation of pressure and that of temperature below $40^{\circ}C$ but weakly dimerized at $40^{\circ}C$ because of the intermolecular hydrophobic interaction of eight methyl groups of two molecules. And it thermally decomposed above $50^{\circ}C$.

• Korean Journal of Materials Research
• /
• v.10 no.3
• /
• pp.246-252
• /
• 2000

Thermoelectric properties of the $Bi_2(Te_{0.85}Se_{0.15})_3$ alloy, prepared by mechanical alloying and hot pressing, were investigated with the variation of the hot-pressing temperature ranging from $300^{\circ}C$ to $550^{\circ}C$. Contrary to the p-type behavior of single crystal, the hot-pressed $Bi_2(Te_{0.85}Se_{0.15})_3$ alloy exhibited n-type conduction without addition of donor dopant. When the $Bi_2(Te_{0.85}Se_{0.15})_3$ powders were annealed in $(50{\%}\;H_2+50{\%}\;Ar)$ atmosphere, the hot-pressed specimens exhibited a positive Seebeck coefficient due to the reduction of the electron concentration by removal of the oxide layer on the powder surface and annealing-out of the excess Te vacancies. Figure-of-merit of the hot-pressed $Bi_2(Te_{0.85}Se_{0.15})_3$ alloy was improved by hot pressing at temperatures above $450^{\circ}C$, and the maximum value of $1.92{\times}10^{-3}/K$ was obtained for the specimen hot-pressed at $550^{\circ}C$.

• Korean Journal of Materials Research
• /
• v.9 no.4
• /
• pp.349-354
• /
• 1999

The temperature dependences of the Hall coefficient, carrier mobility, electrical resistivity, Seebeck coefficient, thermal conductivity, and figure-of-merit of the undoped and $CdI_2$-doped 90% $Bi_2Te_3-10% Bi_2Se_3$, single crystals, grown by the Bridgman method, have been characterized at temperatures ranging from 77K to 600K. The saturated carrier concentration and degenerate temperature of the undoped 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal are $5.85\times10_{18}cm^{-3}$ and 127K, respectively. The scattering parameter of the 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal is determined to b -0.23, and the electron mobility to hole mobility ratio ($\mu_e/\mu_h)$ is 1.45. The bandgap energy at 0K of the 90% <$Bi_2Te_3-10% Bi_2Se_3$ single crystal is 0.200 eV. Adding $CdI_2$as a donor dopant, a maximum figure-of-merit of $3.2\times10^{-3}/K$$CdI_2$-doped specimen.

• Journal of the Korean Society for Heat Treatment
• /
• v.31 no.3
• /
• pp.135-142
• /
• 2018

In this study, we have fabricated n-type $Bi_2Te_{2.85}Se_{0.15}$ compounds by different processing routes such as crushing, milling and mixing respectively. Subsequently, the obtained powders were consolidated by spark plasma sintering (SPS). The phase crystallinity of bulk samples were identified using X-ray diffraction technique. Powder morphology and fracture surface of bulk samples were observed using the scanning electron microscopy (SEM). The Seebeck coefficient and electrical conductivity values were significantly increased for the milling sample than crushing and mixing samples. As a result, the maximum power factor was obtained $2.4mW/mK^2$, which is thrice than that of crushing process. The maximum figure of merit (ZT) of 0.77 was achieved at 400 K for the milling sample. Furthermore, relatively high hardness and density values were noticed for the different processed samples.

• Ocean and Polar Research
• /
• v.30 no.4
• /
• pp.445-451
• /
• 2008

This paper examines measures of technical efficiency in off-shore fishery based on a frontier production function model of the Cobb-Douglas type. Technical efficiency ranges between 57.13 and 98.62 percent. The results suggest that the highest TE in the industry is the trawl. Also, this analysis shows that Busan's Danish seine fishery has a maximum TE. Angling in Gangwon has a minimum TE. Empirical measures of technical efficiency in this study can be useful in analyzing the potential effects of policies designed to deal with the current fishery industry.

• Journal of Powder Materials
• /
• v.3 no.4
• /
• pp.253-259
• /
• 1996

The efficiency of thermoelectric devices for different applications is known to depend on the thermoelectric effectiveness of the material which tends to grow with the increase of its chemical homogeneity. Thus an important goal for thermal devices is to obtain chemically homogeneous solid solutions. In this work, the new process with rapid solidification (melt spinning method) followed by hot pressing was investigated to produce homogeneous material. Characteristics of the material were examined with HRD, SEM, EPMA-line scan and bending test. Property variations of the materials were investigated as a function of variables, such as dopant ${CdCl}_{2}$ quantity and hot pressing temperature. Quenched ribbons are very brittle and consist of homogeneous $Bi_2Te_3$, ${Bi}_{2}{Se}_{3}$ solid solutions. When the process parameters were optimized, the maximum figure of merit was 2.038$\times$$10^{-3}K^{-4}. The bending strength of the material hot pressed at 50$0^{\circ}C$ was 8.2 kgf/${mm}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1994.05a
• /
• pp.123-126
• /
• 1994

We discussed the thermal analysis for recording media with the variation of the laser pulse duration and the power and the temperature distribution for the optimized Te-based antireflection structure by using the computer calculations. If the radial diffusion of heat is negligible, we can calculate the maximum temperature at the spot center in recording layer by Simple Method, and the temperature profile considering the specific heat and the latent heat by Numerical Method. As a result, the effect of the heat sinking which acted as a loss for the hole formation can be minimized by introducing the pulse of the hole formation duration( $\tau$ ) shorter than the thermal time constant( $\tau$$\sub$D/) of dielectric layer. This requirments can be satisfied as using the dielectric thickness of the 7nd ART condition or the dielectric materials with low thermal diffusivity.