• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.2
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• pp.33-38
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• 2010

Recently, photovoltaic generator system is widely extended by energy policy of the government. Add to this, high efficiency of photocell power generation is steady needed to sun tracking method. However sun tracking method is not widely extended by insufficiency of tracking technology. As method of solving this problem, this paper applied sunlight sensor and neural network control algorithm for maximum power tracking of sun photocell. Sun tracking sensor consists of one upright square pole and form light sensor of east, west, south, north on flat board. Sun tracking dual axes control is operated respectively by two motor. Motor control input is calculated by neural network control algorithm. The function of proposed control method is verified by sun tracking experiment of photocell generation. The sun tracking method of this paper is increased 32[%] efficiency more than fixed method.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.11
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• pp.67-72
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• 2011

Recently, photovoltaic generator system is widely extended by energy policy of the government. Add to this, for high efficiency of power generation per natural light unit area is needed to sun tracking system. And it is needed to condensed light generator for reducer of equipment expense. As method of solving this problem, this paper is developed multi-flat reflector sun tracking system for sun photocell maximum power generation. The system is consisted of multi-flat reflector and two axes machinery and sun location perceiver and AVR controller. GaAs 3J cell generated 6.75 times power more than silicon cell by times condensing light system. As a result, condensing light system of multi-flat reflector generated maximum power and showed reducing costs to photovoltaic generator.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.229-236
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• 2014

A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.