• Korea-Australia Rheology Journal
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• 제14권2호
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• pp.63-70
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• 2002

Chemical mechanical planarization (CMP) is the polishing process enabled by both chemical and mechanical actions. CMP is used in the fabrication process of the integrated circuits to achieve adequate planarity necessary for stringent photolithography depth of focus requirements. And recently copper is preferred in the metallization process because of its low resistivity. We have studied the effects of chemical reaction on the polishing rate and surface planarity in copper CMP by means of numerical simulation solving Navier-Stokes equation and copper diffusion equation. We have performed pore-scale simulation and integrated the results over all the pores underneath the wafer surface to calculate the macroscopic material removal rate. The mechanical abrasion effect was not included in our study and we concentrated our focus on the transport phenomena occurring in a single pore. We have observed the effects of several parameters such as concentration of chemical additives, relative velocity of the wafer, slurry film thickness or ash)tract ratio of the pore on the copper removal rate and the surface planarity. We observed that when the chemical reaction was rate-limiting step, the results of simulation matched well with the experimental data.

• 한국환경과학회지
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• 제17권5호
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• pp.547-553
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• 2008

For the RhB removal from the wastewater, electrochemical method was adapted to this study. Three dimensionally stable anode (Pt, Ir and Ru) and graphite and Ru cathode were used. In order to identify decolorization, the effects of electrode, current density, electrolyte and air flow rate were investigated. The effects of electrode material, current, electrolyte concentration and air flow rate were investigated on the decolorization of RhB. Electro-Fenton's reaction was evaluated by added $Fe^{2+}$ and $H_2O_2$ generated by the graphite cathode. Performance for RhB decolorization of the four electrode systems lay in: Ru-graphite > Ru-Ru > Ir-graphite > Pt-graphite. A complete color removal was obtained for RhB (30 mg/L) at the end of 30 min of electrolysis under optimum operations of 2 g/L NaCl concentration and 2 A current. $Fe^{2+}$ addition increased initial reaction and decreased final RhB concentration. However the effect was not high.

• Transactions on Electrical and Electronic Materials
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• 제6권4호
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• pp.164-168
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• 2005

Effects of high-temperature slurry were investigated on the chemical mechanical polishing (CMP) performance of tetra-ethyl ortho-silicate (TEOS) film with silica and ceria slurries by the surface analysis of X-ray photoelectron spectroscopy (XPS). The pH showed a slight tendency to decrease with increasing slurry temperature, which means that the hydroxyl $(OH^-)$ groups increased in slurry as the slurry temperature increased and then they diffused into the TEOS film. The surface of TEOS film became hydro-carbonated by the diffused hydroxyl groups. The hydro-carbonated surface of TEOS film could be removed more easily. Consequently, the removal rate of TEOS film improved dramatically with increasing slurry temperature.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1296-1301
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• 2003

The chemical mechanical polishing(CMP) is necessarily applied to manufacturing the dielectric layer and metal line in the semiconductor device. The conditioning of polishing pad in CMP process additionally operates for maintaining the removal rate, within wafer non-uniformity, and wafer to wafer non-uniformity. But the fixed abrasive pad(FAP) using the hydrophilic polymer with abrasive that has the swelling characteristic by water owns the self-conditioning advantage as compared with the general CMP. FAP also takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing due to the reduction of abrasive concentration. This paper introduces the manufacturing technique of FAP. And the tungsten CMP using FAP achieved the good conclusion in point of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

• 한국정밀공학회지
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• 제22권10호
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• pp.90-98
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• 2005

A monitoring system is necessary to make the polishing process more reliable in order to ensure the high quality and performance of the final products. Generally, AE (Acoustic Emission) is known to be closely related to the material removal rate (MRR). As the surface becomes rougher, the MRR and AE increase. Therefore, the surface roughness can be indirectly estimated using the AE signal measured during the polishing. In this study, an AE sensor-based monitoring system was fabricated to detect the very small AE signal resulting from the friction between a tool and a workpiece during polishing. The performance of this monitoring system was estimated according to polishing conditions, the relation between the level of the AE RMS and the surface roughness during the polishing was investigated.

• 한국정밀공학회지
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• 제13권11호
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• pp.73-81
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• 1996

This paper presents a general procedure for the selection of the machining parameters for a given machine which provides the maximum material removal rate using a Genetic Algorithms(GAs). Some constraints were given in order to achieve desired surface integrity and cutting tool life conditions as wel as to protect machine tool. Such a constrained problem can be transformaed to unconstrained problem by associating a penalty with all constraint violations and the penalties are included in the function evaluation. Genetic Algorithms can be used for finding global optimum cutting conditions with respect to the above cost function transformed by pennalty function method. From the demonstration of the numerical results, it was found that the near optimal conditions could be obtained regardless of complex solution space such as cutting environment.

• Carbon letters
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• 제21권
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• pp.81-85
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• 2017

The objective of this study is the removal of chromium from tannery wastewater by electrosorption on carbon prepared from lignocellulosic natural residue "peach stones' thermally treated. The followed steps for obtaining coal in chronological order were: cleaning, drying, crushing and finally its carbonization at $900^{\circ}C$. The characterization of the carbon material resulted in properties comparable to those of many coals industrially manufactured. The study of the dynamic adsorption of chromium on the obtained material resulted in a low removal rate (33.7%) without applied potential. The application of negative potentials of -0.7 V and -1.4 increases the adsorption of chromium up to 90% and 96% respectively. Whereas a positive potential of +1.4V allows desorption of the contaminant of 138%.

• Korean Chemical Engineering Research
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• 제58권3호
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• pp.466-473
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• 2020

직물집전체는 에너지 효율이 높은 담수화 방식인 축전식탈염(Capacitive deionization: CDI)시스템에서 유망한 전극 재료가 될 수 있다. 직물집전체의 매력적인 특징 중 하나는 인장강도가 강하다는 것인데, 기계적 강도가 약한 그라파이트 호일 전극의 대안이 될 수 있다. 또한 섬유적 특성으로 인하여 쉽게 형상을 만들 수 있고, 다공성 물질이라는 점과 섬유 간 공간은 수용성 매질의 흐름을 원활하게 해 준다. 본 연구에 사용된 섬유는 도전성 LM fiber와 carbon fiber를 사용한 방적사를 이용하여 직조 구조로 만들어졌으며, 인장강도는 319 MPa로 그라파이트 호일에 비해서 약 60 배 정도 더 강하다. 전극슬러리의 점도, 흡착전압, 공급액의 유량, 공급액의 농도를 변화시켜 가면서 염 제거효율을 측정하여 결과를 분석하였다. NaCl 200 mg/L, 20 ml/min, 흡착전압 1.5 V 조건에서, 단위 셀에서 43.9%, 100개의 셀을 적층한 모듈에서는 59.8%의 염 제거 효율을 각각 보였다. 단위 셀에서는 흡착전압이 1.3, 1.4, 1.5 V로 증가함에 따라 염 제거효율이 증가하다가 1.6과 1.7 V로 증가하면서 염 제거 효율은 감소하였다. 그러나 100 셀 적층 모듈에서는 1.5 V 이상의 전압에서도 염 제거효율이 완만한 증가세를 나타내었다. 공급액의 유량을 증가시켰을 때 염 제거율은 감소하였고, 또한 공급액의 농도를 증가시켰을 때에도 염 제거율은 감소하였다.

• Transactions on Electrical and Electronic Materials
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• 제12권2호
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• pp.56-59
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• 2011

The characterization of the chemical mechanical polishing (CMP) process for undensified phophosilicate glass (PSG) film is reported using design of experiments (DOE). DOE has been used by experimenters to understand the relationship between the input variables and responses of interest in a simple and efficient way, and it typically is beneficial for determining the appropriatesize of experiments with multiple process variables and making statistical inferences for the responses of interest. The equipment controllable parameters used to operate the machine consist of the down force of the wafer carrier, pressure on the back side wafer, table and spindle speeds (SS), slurry flow (SF) rate, pad condition, etc. None of these are independent ofeach other and, thus, the interaction between the parameters also needs to be understoodfor improved process characterization in CMP. In this study, we selected the five controllable equipment parameters the most recommendedby process engineers, viz. the down force (DF), back pressure (BP), table speed (TS), SS, and SF, for the characterization of the CMP process with respect to the material removal rate and film uniformity in percentage terms. The polished material is undensified PSG which is widely used for the plananization of multi-layered metal interconnects. By statistical modeling and the analysis of the metrology data acquired from a series of $2^{5-1}$ fractional factorial designs with two center points, we showed that the DF, BP and TS have the greatest effect on both the removal rate and film uniformity, as expected. It is revealed that the film uniformity of the polished PSG film contains two and three-way interactions. Therefore, one can easily infer that process control based on a better understanding of the process is the key to success in current semiconductor manufacturing, in which the size of the wafer is approaching 300 mm and is scheduled to continuously increase up to 450 mm in or slightly after 2012.

• 실내환경 및 냄새 학회지
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• 제16권2호
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• pp.139-149
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• 2017

In order to reduce odor and methane emission from the landfill, open biocovers and a closed biofilter were applied to the landfill site. Three biocovers and the biofilter are suitable for relatively small-sized landfills with facilities that cannot resource methane into recovery due to small volumes of methane emission. Biocover-1 consists only of the soil of the landfill site while biocover-2 is mixed with the earthworm casts and artificial soil (perlite). The biofilter formed a bio-layer by adding mixed food waste compost as packing material of biocover-2. The removal efficiency decreased over time on biocover-1. However, biocover-2 and the biofilter showed stable odor removal efficiency. The rates of methane removal efficiency were in order of biofilter (94.9%)>, biocover-1(42.3%)>, and biocover-2 (37.0%). The methane removal efficiency over time in biocover-1 was gradually decreased. However, drastic efficiency decline was observed in biocover-2 due to the hardening process. As a result of overturning the surface soil where the hardening process was observed, methane removal efficiency increased again. The biofilter showed stable methane removal efficiency without degradation. The estimate methane oxidation rate in biocover-1 was an average of 10.4%. Biocover-2 showed an efficiency of 46.3% after 25 days of forming biocover. However, due to hardening process efficiency dropped to 4.6%. After overturn of the surface soil, the rate subsequently increased to 17.9%, with an evaluated average of 12.5%.