• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.86-89
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al and Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Au; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• International Journal of Industrial Entomology and Biomaterials
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• v.11 no.1
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• pp.13-19
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• 2005

Biotechnological researches in Central Asian Research Institute of Sericulture were developed since 1981 when laboratory of artificial diets for mulberry silk­worm was created. The researches were directed not only to creation of accessible artificial diets (AD) for off-season mass rearing of economical beneficial insect and for industrialization of sericulture but also to obtaining of easy reproducible source of animal proteins, carbohydrates, lipids, enzymes, enzymes inhibitors and other metabolites - bioresource for manufacture of oriental medicine preparations. Space experiments with silkworms became possible with use of AD. These experiments used mulberry silkworm as high effective board test organism with outstanding developmental, reproductive and transgenic properties having impor­tant significance in future of cosmonautics. Introduction to practice of bioprotective and ecologically pure method of drying and sterilizing of green cocoons and by-products of silk manufacture allows to increase efficiency of cocoons reeling technology as well as to preserve nativity of biological active substances in mulberry silkworm pupae that is unachievable by traditional methods of raw material processing. New spheres of application of two important silk proteins - fibroin and sericin in medicine, cosmetics, for bio- and nanotechnology are opening with use of biotechnological approaches. At present the achievements and experience of R & D in these fields are used in creation of modern pests biocontrol agents. Schemes of efficient processing of cocoon raw material, by-products and wastes of sericulture and cocoon processing are devel- Institute of Physiology and Biophysics, Uzbek Academy of Sciences, I, Niyazov street, 700095, Tashkent, Uzbekistan. oped for obtaining of traditional and new consumer products.

• Journal of the Korean Graphic Arts Communication Society
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• v.22 no.2
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• pp.73-82
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• 2004

A thermal transfer method was developed novel method to form the phosphor screen for monochrom VPT. This method have advantages of simple process, clean environment, saving raw material and running-cost. But now applying phosphor screen for thermal transfer method has been formed three layers (phosphor layer, ITO layer and thermal adhesive layer) on the PET film as substrate. This is complex process, consumption of raw-material and require of high cost. Also ITO paste at present has been imported from Japan. To improve these problems, we have developed ITO paste as conductive paste by using ITO sol and binder resin (AA3003). Ito paste as developed in this study has both conductive and excellent thermal transfer abilities. Thus we could manufacture phosphor screen formed two layers (phosphor layer and ITO layer).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.73-76
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• 1998

We give pressure stimulation into organic thin films and detect the induced displacement current. then manufacture a device under the accumulation condition that the state surface pressure is 15[mN/m]. In processing of a device manufacture. We can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/organic thin films(polyimide)/Au, the number of accumulated layers are 31,35, and 41. I-V characteristic of the device is measured from 0[V] to +5[V]. The maximum value of measured current is increased as the number of accumulated layers are decreased. The resistance for the number of accumulated layers, the energy density for an input voltage show desired results, and the insulation of a thin film is better as the interval between electrodes is larger.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.723-726
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-$\gamma$ Benzyl $_D$-Glutamate/Al; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.221-221
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• 2006

The SMD type P-N junction diode with ceramic package for diode case were fabricated. It was made this diode with simple process from $Al_2O_3$ ceramic chip, solder preform, diode chip, coating reagent and conductive paste for chip terrmination. Its merit is small size, easy manufacture. fast cooling with ceramic case. The electric characteristics of the diode such as reverse recovery time, breakdown voltage, forward voltage, and leakage current were 5 28ns, 1322V, 1.08V, $0.45{\mu}A$.

• Journal of the Korean Society of Food Science and Nutrition
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• v.4 no.1
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• pp.25-29
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• 1975

Took an experiment of the jam manufacture with the raw material―the persimmons mellowed naturally and the persimmons which were got rid of astringency artificially―with many kinds of Korean persimmons. The results as follows : 1. Table 1. shows the analysis Table of the nutritional composition in the raw persimmon and Table 2. shows the gelation factor content in the persimmon. 2. Table 3. shows the mixture ratio of the manufacturing raw material of persimmon jam and shows the properties of the jam. 3. The color of the jam manufactured with made from the natural mellowed persimmons was persimmon color containing black spot or orange. But the jam manufactured with the persimmons which were got rid of astringency by ethanol changed from persimmon color to light purple during the storage. 4. The jam manufactured with the natural mellowed persimmons did not taste astringent but the jam manufactured with the persimmons which were got rid of astringency artificially tasted astringent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.913-919
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• 2000

We give pressure stimulation into long chain fatty acid of LB thin films then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 13, 17 and 19. The I-V characteristic of the device is measured from 0[V] to +1.5[V]. We have investigated the capacitance because this fatty acid system have a accumulated layers. The maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.101-104
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• 2002

Abstract We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.27-30
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• 2003

Recently, on power system, it is used to high voltage of transmission and distribution due to safe power supply and have high quality and insulation in order to satisfy excellent insulator. Thus, according to underground of high voltage cable, is occurred break down by ground short. Therefore, it is used to high quality XLPE power cable to interrupt instantaneous voltage drop. If it appear inner defect for cable whose have high quality and insulation, it is reduced rapidly due to concentration of electrical field. After assemble to manufacture, in order to inspect cable condition, it is decided much inspection standard. In this paper, In inner defect of assembling cable at manufacture, for measure the variation of insulation condition by void. it tested the variation of insulating characteristics, using $\phi$-q-n distribution variation in partial discharge experiment.