• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.493-496
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• 2003

Electrical characteristic of tracking resistance, volume resistance, insulation breaking strength etc. and mechanical characteristic are required to high voltage insulation insulator silicone rubber. Tracking resistance is adding much ATH to improve tracking resistance as the most important factor among them. But, there is problem that mechanical strength grows worse rapidly adding much ATH. Therefore, this research studied effect that flame retardant gets to tracking resistance during factor that influence to tracking resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.613-616
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• 2001

This SF6 gas is widely used in industrial of insulation field. In this paper, N2 is mixed to improve pure SF6 gas characteristics. Electron transport coefficients in SF6-N2 mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results of this method, which are like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient, and critical EIN, can be important data to present characteristic of gas for insulation. Specially critical E/N is a data to evaluate insulation strength of a gas and is presented in this paper for various mixture ratios of SF6-N2 mixture gases.?⨀␍?܀㘱〮㜳㬓M敤楣楮攠慮搠桥污瑨

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.333-335
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• 2005

The simulation of electric field distribution of discharge tube with globular $ZrO_2$ and the removal characteristic of Escherichia coli by the discharge tube with globular $ZrO_2$ were estimated. The removal characteristic of Escherichia coli was related to the input voltage because the electric field is increased according to input voltage. As the particle size of $ZrO_2$ beads increased, the removal time of Escherichia coli was shortened due to the dielectric polarization of $ZrO_2$ beads.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.398-401
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• 2005

The characteristic of sheet metal process is the few loss of material during process, the short processing time and the excellent price and strength. Such press-forming process are the used machine ability and the characteristic, used material, the accuracy of the part which becomes processing and side condition of a process are considered and the designed. The purpose of this study is apply efficiently sheet metal forming processing by 3D formation-analyzed program simulations in the site. By a study, forming process was simulation to drawing and trimming and cam process using static-implicit method software. By making apply this to an industrial site the productivity improvement and cost reduction etc. effect able was predicted.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1997.04a
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• pp.506-512
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• 1997

Ultrasonic knives have been successfully used for the surgery of many medical fields. However, the conventional ultrasonic knives for surgical operation cannot be controlled its resonant frequency. So if the material to cut has different characteristic impedance then different ultrasonic knife will be needed. Because the optimum driving frequency of ultrasonic knife is different by characteristic impedance of material. In this work, using a frequency variable ultrasonic transducer made of multi-layered PZT vibrator, a frequency controllable ultrasonic knife will be suggested. The design and computation principles will be also derived. For this work, firstly, the characteristics of this ultrasonic knife will be analyzed by transmission line model equivalent circuit, and the free admittance characteristics and vibrational velocity distributions will be obtained. Secondly, we will design and make the frequency controllable electrical oscillator for driving this ultrasonic knife.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.169-174
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• 1996

In this paper, the electron transport characteristic in CF$_4$has been analysed over the E/N range 1~300(Td) by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The alteration of cross sections from the literature is avoided as much as possible in the analysis. The motion has been calculated to give swarm parameters for the electron drift velocity(W), diffusion coefficient(D$_{L}$), the ratio of the diffusion coefficient to the mobility(D$_{L}$/$\mu$), mean energy($\varepsilon$), the electron energy distribution function. The electron energy distribution function has been analysed in CF$_4$at E/N=50, 100 and 200(Td) for a case of the equilibrium region in the mean electron energy. The results of Boltzmann equation and Monte Carlo simulation have been compared with experimental data by Y. Nakamura and M. Hayashi.shi.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.428-431
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• 2002

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/ PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.362-365
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• 2002

This paper, experiment manufactures device of Metal/Poly-${\gamma}$ Benzyl $_D$-GlutamateOrganic Films/Metal structure using PBDG and I-V properties and C-F properties. The I-V characteristic is measured that approve voltage from 0 to +2[V] of device and the distance between electrode is larger, could know that small current flow and thin film could know that had insulation property. C-F characteristic has each other affinity between the polarization amount and frequency. Permittivity of MIM device could know by dipole that is voluntary polarization of LB film that polarization is happened. The capacitor properties of a thin film is better as the distance between electrodes is smaller.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.98-101
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• 2005

BSCCO thin films fabricated by using the evaporation method. As a result, although the composition of Bi2212 was set up, the phase of Bi2201, Bi2212 and Bi2223 was formed. The formation area of these stable phases is indicated as inclined line in the direction of the right lower end from the Arrhenius plot of the substrate temperature-oxidation gas pressure, and are distributed in very small area. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.112-115
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• 2011

To stabilize the electric characteristic of Silicon Thin Film Transistor, reducing the current leakage is most important issue. To reduce the current leakage, many ideas were suggested. But the increase of mask layer also increased the cost. On this research Bird's Beak process was use to present element. Using Silvaco simulator, it was proven that it was able to reduce current leakage without mask layer. As a result, it was possible to suggest the structure that can reduce the current leakage to 1.39nA without having mask layer increase. Also, I was able to lead the result that electric characteristic (on/off current ratio) was improved compare from conventional structure.