• 제목/요약/키워드: Material Removal rate

검색결과 593건 처리시간 0.029초

연속회분식반응조에서 유기물 부하와 질산염농도에 따른 생물학적 질소 및 인 제거 특성 (Biological Nitrogen and Phosphorus Removal Characteristics on Organic Material and Nitrate Loadings in SBR Process)

  • 김이태;이희자;김광수;배우근
    • 한국물환경학회지
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    • 제20권6호
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    • pp.571-576
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    • 2004
  • Since anaerobic/anoxic/oxic process, which is a typical mainstream biological nitrogen and phosphorus removal process, utilizes influent organic matter as an external carbon source for phosphorus release in anaerobic or anoxic stage, influent COD/T-P ratio gives a strong influence on performance of phosphorus removal process. In this study, a bench scale experiment was carried out for SBR process to investigate nitrogen and phosphorus removal at various influent COD/T-P ratio and nitrate loadings of 23~73 and 1.6~14.3g $NO_3{^-}-N/kg$ MLSS, respectively. The phosphorus release and excess uptake in anoxic condition were very active at influent COD/T-P ratios of 44 and 73. However, its release and uptake was not obviously observed at COD/T-P ratio of 23. Consequently, phosphorus removal efficiency was decreased. In addition, the phosphorus release and uptake rate in anoxic condition increased as the nitrate loading decreased. Specific denitrification rate had significantly high correlation with organic materials and nitrate loadings of the anoxic phase too. The rate of phosphorus release and uptake in the anoxic condition were $0.08{\sim}0.94kg\;S-P/kg\;MLSS{\cdot}d$ and $0.012{\sim}0.1kg\;S-P/kg\;MLSS{\cdot}d$, respectively.

탄화규소의 T-curve, 마모 및 침식 (T-curve, wear and Erosion of Silicon Carbide)

  • 채준혁;조성재;윤경진;김석삼
    • Tribology and Lubricants
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    • 제14권4호
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    • pp.114-120
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    • 1998
  • The T-curve, wear and erosion behaviors of two different silicon carbides, i.e., the fine grained SiC and the in situ-toughened SiC(IST-SiC). Both materials exhibited an increasing T-curve behavior, although the T-curve of IST-SiC was steeper than that of fine grained SiC. The fracture toughness of IST-SiC was larger than that of fine grained SiC at long crack regime, whereas an opposite tendency occurred at short crack regime. The rate of material removal during wear and erosion tests was higher in IST-SiC compared to fine grained SiC. The difference between the material removal rates of two materials was discussed in the light of their R-curve behaviors.

탄화규소의 R-curve, 침식 및 마모 특성 (R-curve, erosion and wear of silicon carbide ceramics)

  • 채준혁;조성재;김석삼
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 1998년도 제27회 춘계학술대회
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    • pp.139-145
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    • 1998
  • This paper addresses the R-curve properties, wear resistance, and erosion resistance of the two silicon carbide ceramics with different microstructures, i.e. , fine grained SiC and in situ-toughened SiC(IST SIC). Fine grained SiC exhibits a relatively flat R-curve behavior whereas the IST SiC exhibits a increasing R-curve behavior. The increasing R-curve behavior in IST SiC is attributed to relatively weak grain boundaries. The rate of material removal during wear tests and erosion tests was higher for IST SiC than that for fine grained SiC. This is attributed to the weaker grain boundaries in IST SiC than that in fine grained SiC. It is implied that fracture toughness in short crack regime should be taken into consideration in the interpretation of the microscopical material removal process. We show that the higher the strength of grain boundaries is, the higher wear and erosion resistances are.

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비트리파이드 본드 CBN 휠의 연삭특성 (Grinding Characteristics of Vitrified-bond CBN Wheel)

  • 원종호;김건희;박상진;안병민
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2000년도 추계학술대회 논문집
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    • pp.787-792
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    • 2000
  • Ultra-abrasives such as diamond and CBN have used to maintain accuracy and form deviation for superalloy etc. This study contains the dry cylindrical grinding of metals with Vitrified-bond CBN wheel. For various conditions of grinding speed, workpiece speed, grinding depth and feed speed of table, the grinding resistance, the surface roughness, and the material removal are measured and discussed. The results are as follows.

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전해 가공을 이용한 텅스텐 카바이드 미세축 제작 (Fabrication of Tungsten Carbide Microshaft Using Electrochemical Machining)

  • 강명주;오영탁;주종남
    • 한국정밀공학회지
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    • 제19권3호
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    • pp.80-87
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    • 2002
  • Tungsten carbide microshaft is used as micro-punch, electrode of MEDM (micro-electro-discharge machining), and micro-tool because it has high hardness and high rigidity. In this study, the tungsten carbide microshaft was fabricated using electrochemical machining. Concentration of material removal at the sharp edge and metal corrosion layer affect the shape of the microshaft. Control of microshaft shape was possib1e through conditioning the machining voltage and electrolyte concentration. By applying periodic voltage, material removal rate increased and surface roughness improved. The fabricated microshaft in $H_2 SO_4$ electrolyte maintained sharper end edge and better surface finish than those fabricated by other electrolytes.

화학기계적 연마 가공에서의 윤활 특성 해석

  • 박상신;조철호;안유민
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 1998년도 제28회 추계학술대회
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    • pp.272-277
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    • 1998
  • Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CMP process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer(work piece) and pad(tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

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화학기계적 연마 가공에서의 윤활 특성 해석 (Analysis of the Lubricational Characteristics for Chemical-Mechanical Polishing Process)

  • 박상신;조철호;안유민
    • Tribology and Lubricants
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    • 제15권1호
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    • pp.90-97
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    • 1999
  • Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CU process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer (work piece) and pad (tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

최적 2.5D 윤곽 평행 공구경로 (An Optimum 2.5D Contour Parallel Tool Path)

  • 김현철;양민양
    • 한국정밀공학회지
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    • 제23권2호
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    • pp.35-42
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    • 2006
  • Although the conventional contour parallel tool path obtained from geometric information has been successful to make desirable shape, it seldom consider physical process concerns like cutting forces and chatters. In this paper, an optimized contour parallel path, which maintains constant MRR(material removal rates) at all time, is introduced and the result is verified. The optimized tool path is based on a conventional contour parallel tool path. Additional tool path segments are appended to the basic tool path in order to achieve constant cutting forces and to avoid chatter vibrations at the entire machining area. The algorithm has been implemented for two dimensional contiguous end milling operations with flat end mills, and cutting tests were conducted to verify the significance of the proposed method.