• Journal of the Korean earth science society
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• v.35 no.5
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• pp.313-323
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• 2014

We secured the high dispersion spectra of the symbiotic star CI Cyg. The HI, HeI, and HeII line profiles were analyzed using the relatively long exposure data including 1800 sec (Sep. 12, 1998, phase=0.90), 3600 sec (Aug. 12, 2002, ${\phi}=0.47$), and 1800 sec (Oct. 21, 2009, ${\phi}=0.54$). Although a minor outburst was reported in 2008, our three observation periods were generally known to be quiescent in earlier photometric studies. With the help of hydrodynamic simulations, we identified the two emission zones responsible for the blue- and red-shifted line components: (a) an accretion disk around a hot white dwarf star which consists of the outer cool HeI emission zone and the inner hot HeII emission part, and (b) a high density zone near the inner Lagrangian point responsible for the HeI line flux variation and the broadening of its line profile. The HeII line fluxes indicate that the HeII emission zone of the accretion disk is relatively stable, implying a constant gas inflow from the giant star throughout the quiescent period. The 2002 HeI data showed that the notable mass flow activity through the inner Lagrangian point occurred during this period and its flux intensity became strongest, whereas the HeII line width in the same period indicates that its flow activity forced the accretion disk to expand. The [OIII] lines were observed in 1998 but not detected in 2002 and 2009, implying the disappearance of the low density zone. Based on our kinematical studies upon the line profiles, we conclude that CI Cyg was stable in 1998 among the three observation periods selected in this research.

• Korean Chemical Engineering Research
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• v.46 no.1
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• pp.94-98
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• 2008

In order to improve the specific capacitance of amorphous hydrous manganese oxide ($MnO_2$) for supercapacitors, it is made into composites with vapour-grown carbon nanofibers (VGCF) having the VGCF ratio as 40 wt% in the composites. The electrochemical properties of these composites are investigated in 1.0 M $Na_2SO_4$ by cyclic voltammetry (CV), impedance measurements and chronopotentiometric charger/discharger. The composite with 40 wt% VGCF shows the superior electrochemical performance, whose specific capacitance (based on the mass of $MnO_2$, $0.8mg/cm^2$) is 380 F/g at 20 mV/s and 230 F/g at 500 mV/s. Also, the cycle-life testing of this electrode carried out for 3,000 charge/discharge cycles at $2.0mA/cm^2$ shows 97% capacitance retention.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.695-699
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• 2001

Cerium dioxide (CeO$_2$) was used as the intermediate layer between the ferroelectric thin film and Si substrate in a metal-ferroelectric-semiconductor field effect transistor (MFSFET), to improve the interface property by preventing the interdiffusion of the ferroelectric material and the Si substrate. In this study, CeO$_2$ thin films were etched with a CF$_4$/Ar gas combination in inductively coupled plasma (ICP). The maximum etch rate of CeO$_2$ thin films was 270$\AA$/min under CF$_4$/(CF$_4$+Ar) of 0.2, 600 W/-200V, 15 mTorr, and $25^{\circ}C$. The selectivities of CeO$_2$ to PR and SBT were 0.21, 0.25, respectively. The surface reaction in the etching of CeO$_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F. Compounds such as Ce-F$_{x}$ remains on the surface of CeO$_2$ thin films. Those products can be removed by Ar ion bombardment. The results of secondary ion mass spectrometry (SIMS) were consistent with those of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of CeO$_2$ thin films. The etch profile of over-etched CeO$_2$ films with the 0.5${\mu}{\textrm}{m}$ line was approximately 65$^{\circ}$.>.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1736-1738
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• 2000

ITO/TPD($450{\AA}$)/$Alq_{3}(500{\AA})$/Al:Li($1200{\AA}$) 구조의 유기 LED를 제작하였다. Al과 Al:Li(0.lwt%), Al:Li(1wt%), Al:Li(5wt %) 합금을 음전극으로 증착시켜 소자의 전기적 광학적 특성을 분석하였다. 음전극 내의 Li의 분포를 알아보기 위하여 SIMS(Secondary ion Mass Spectroscopy) depth profiling을 하였다. Al:Li합금에서 Li의 함량이 0.1 wt %에서 5 wt %로 증가함에 따라 소자의 turn-on voltage는 약 3.5 V에서 3 V로 감소하였고, 구동전압도 감소하였다. 200$cd/m^2$의 휘도를 기준으로 Al:Li(0.1wt %) 합금을 사용한 소자의 경우 3.5 lm/W로 발광효율이 최대였다. 증착된 Al:Li(0.1wt%) 합금의 SIMS depth profiling 결과 초기에만 Al:Li이 증착되어 Al:Li/Al의 두 층이 형성되었고, Al:Li 합금층의 두께는 약 120${\AA}$ 이었다.

• Journal of the Korean Chemical Society
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• v.41 no.2
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• pp.88-97
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• 1997

The silyltriflates$(Ph_{3-n}SiH(OTf)_n)$have been produced by the reaction of triphenylsilane and triflic acid$(CF_3SO_3H)$at low temperature. These highly reactive compounds are a valuable reagent for the synthesis of numerous new functional substituted silane derivatives. The reaction of silyltriflates with alkenyl- and alkynylmagnesium bromide as well as organolithium compounds gave new silanes$Ph_2SiHR(R=\;C(CPh,\;CH=CH_2,\;CH_2CH=CH_2,\; (CH_2)_2CH=CH_2,\;(CH_2)_3CH=CH_2)$in high yields. The hydrosilation of prepared alkenyl- and alkynylsilanesPh_2SiHR$in the presence of a platinum catalyst(Pt/C) at high temperature$(200{\circ}C)$gave carbosilane polymers$((Ph_2SiCH=CPh)_n$and$(Ph_2Si(CH_2)m)n;\;m=2∼4, n{\ge}10)$along with five- and six-membered silaalkane ring compounds derived from intramolecular hydrosilation reactions. All of the prepared compounds are confirmed by NMR, UV, IR and mass spectroscopy as well as elemental analysis.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.6
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• pp.34-40
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• 1985

Characteristics of GaAE epilayers grown on (100) CaAs wa(tors by molecular beam epitaxy (MBE) under various single crystal growing conditions were investigated. In fabrica-ting GaAs, epilayer by MBE, the most important factors are a substrate temperature(ts) and a flux density ratio (As/Ga). In this experiment, the substrate temperature was varied in the range of 48$0^{\circ}C$ to $650^{\circ}C$ and As and Ga cell temperatures were varied in the range of 218$^{\circ}C$ to 256$^{\circ}C$ and 876$^{\circ}C$ to 98$0^{\circ}C$, respectively. At the substrate temperature of 54$0^{\circ}C$, As cell temperature of 23$0^{\circ}C$, and Ga cell temperature of 91$0^{\circ}C$, the As/Ga ratio was 5"10, the surface morphology was most smooth . Investigation of As-stabilized surface by RHEED and of depth profile by SIM5 showed that As is less stable than Ga. Also, X-ray diffraction measurement revealed that single crystals of (400) and (200) were formed at the both sub-strate temperatures of 52$0^{\circ}C$ and 54$0^{\circ}C$.TEX>.

• Journal of the Korean Chemical Society
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• v.55 no.1
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• pp.19-27
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• 2011

New series of Mn(II), Ni(II), Co(II), Cu(II) and Zn(II) of the 2-(benzothiazol-2-yl)-N'-(2,5-dihydroxybenzylidene) acetohydrazide have been synthesized and characterized by elemental analysis, IR, UV-vis, $^1H$-NMR, mass and ESR spectra, magnetic susceptibility and molar conductivity measurements. The spectral data and magnetic measurements of the complexes indicate that, the geometries are either square planar or octahedral. The biological activity of the ligand and its complexes against fungi (Aspergillus nigar and Fusarium oxysporium) were investigated. The metal complexes exhibited higher activity than both the parent ligand and the corresponding metal ion.

• Bulletin of the Korean Chemical Society
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• v.30 no.11
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• pp.2589-2594
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• 2009

Aging phenomena of plasma polymer films were studied by using the surface analysis techniques of contact angle measurement, X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (TOFSIMS), and atomic force microscopy (AFM). The polymer films were grown on an aluminum substrate by using a plasma polymerization method from a gas mixture of acetylene and helium, and the films were subsequently modified to have a hydrophilic surface by oxygen plasma treatment. Aging of the polymer films was examined by exposing the samples to water and air environments. The aging process increased the hydrophobicity of the surface, as revealed by an increase in the advancing contact angle of water. XPS analysis showed that the population of oxygen-containing polar groups increased due to the uptake of oxygen during the aging, whereas TOF-SIMS analysis revealed a decrease in the polar group population in the uppermost surface layer. The results suggest that the change in surface property from hydrophilic to hydrophobic nature results from the restructuring of polymer chains near the surface, rather than compositional change of the surface. Oxidative degradation may enhance the mobility and the restructuring process of polymer chains.

• Publications of The Korean Astronomical Society
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• v.30 no.2
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• pp.255-259
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• 2015

Recent narrow-band Ca photometry discovered two distinct red giant branch (RGB) populations in some massive globular clusters (GCs) including M22, NGC 1851, and NGC 288. In order to investigate the differences in light/heavy elements abundances between the two subpopulations, we have performed low-resolution spectroscopy for stars on the two RGBs in these GCs. We find a significant difference (more than $4{\sigma}$) in calcium abundance from the spectroscopic HK' index for both M22 and NGC 1851. We also find a more than $8{\sigma}$ difference in CN band strength between the Ca-strong and Ca-weak subpopulations. For NGC 288, however, we detect the presence of a large difference only in the CN strength. The calcium abundances of the two subpopulations in this GC are identical within errors. We also find interesting differences in CN-CH relations among these GCs. While CN and CH indices are correlated in M22, they show an anti-correlation in NGC 288. However, NGC 1851 shows no difference in CH between two groups of stars having different CN strengths. The CN bimodality in these GCs could be explained by pollution from intermediate-mass asymptotic giant branch stars and/or fast-rotating massive stars. For the presence or absence of calcium bimodality and the differences in CN-CH relations, we suggest these would be best explained by how strongly type II supernovae enrichment has contributed to the chemical evolutions of these GCs.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.29.1-29.1
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• 2009

Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.