• 한국전기전자재료학회논문지
• /
• 제18권6호
• /
• pp.582-586
• /
• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21\times10^9\;cm^{-2}\;to\;9.7\times10^8\;cm^{-2}$. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• 한국세라믹학회지
• /
• 제40권2호
• /
• pp.113-117
• /
• 2003

To reduce the doming of the shadow mask due to thermal expansion and to prevent the color discrepancy, the electron reflecting layer with lead tungsten oxides on the electron gun side of shadow mask was formed by screen printing method and doming property was evaluated in CRT. First, the lead tungsten oxides were prepared by calcining the mixture of lead oxide and tungsten oxide above 600$^{\circ}C$. Second, the paste which has the anti-doming composition including the lead tungsten oxides was coated by screen-printing method. As a result, the doming of the shadow mask was reduced about from 30 to 45%.

• International Journal of Precision Engineering and Manufacturing
• /
• 제7권4호
• /
• pp.8-13
• /
• 2006

Nanoscale fabrication of silicon substrate in an aqueous solution based on the use of atomic force microscopy was demonstrated. A specially designed cantilever with a diamond tip, allowing the formation of a mask layer on the silicon substrate by a simple scratching process (Tribo-Nanolithography, TNL), has been applied instead of the conventional silicon cantilever for scanning. A slant nanostructure can be fabricated by a process in which a thin mask layer rapidly forms on the substrate at the diamond tip-sample junction along scanning path of the tip, and simultaneously, the area uncovered with the mask layer is etched. This study demonstrates how the TNL parameters can affect the formation of the mask layer and the shape of 3-D structure, hence introducing a new process of AFM-based nanolithography in aqueous solution.

• 대한기계학회논문집A
• /
• 제30권10호
• /
• pp.1314-1319
• /
• 2006

This paper describes the novel fabrication method of the high-aspect-ratio nano structure which is impossible by conventional method using a shadow mask and a Deep X-ray Lithography (DXRL). The shadow mask with $1{\mu}m-sized$ apertures is fabricated on the silicon membrane using a conventional UV-lithography. The size of aperture is reduced to 200nm by accumulated low stress silicon nitride using a LPCVD (low pressure chemical vapor deposition) process. The X-ray mask is fabricated by depositing absorber layer (Au, $3{\mu}m$) on the back side of nano shadow mask. The thickness of an absorber layer must deposit dozens micrometers to obtain contrast more than 100 for a conventional DXRL process. The thickness of $3{\mu}m-absorber$ layer can get sufficient contrast using a central beam stop method, blocking high energy X-rays. The nano circle and nano line, 200nm in diameter in width, respectively, were demonstrated 700nm in height with a negative photoresist of SU-8.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.285-285
• /
• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.1046-1049
• /
• 2006

We proposed a simplified fabrication structure and method which can provide separate Red (R), Green (G), Blue (B), and White (W) OLED pixels with 2 metal-mask changes in emitting layer fabrication inspired from the structure of multi-layer white OLED and carrier blocking mechanism. A red emission layer for the R and W pixel with 1st mask, and then a blue emission layer with hole blocking layer for the B and W pixel with 2nd mask, and finally a common green emission layer were deposited sequentially. We expect that this concept would be very useful to the actual fabrication of multi-color OLED display although additional optimization is needed.

• 한국입자에어로졸학회지
• /
• 제12권3호
• /
• pp.103-107
• /
• 2016

We conducted experiments on mask filters. We measured filtering efficiencies of several new mask filters which were manufactured by disassembling and reassembling of one type of mask filter. New filter (A+C: combination of the first layer and the third layer of the tested mask filter) showed the highest efficiency (97.7%) with the respiratory resistance of 98 pa.

• 한국산업융합학회 논문집
• /
• 제20권4호
• /
• pp.339-343
• /
• 2017

Masks are a portable functional product for daily use. They can protect user health by filtering harmful fine particles in the air. In the past decade, there have been approximately 10 yellow dust incidences per year, amounting to a total duration of 20 days, and they continue to increase year after year. In addition, the frequency of yellow dust incidences in Korea has increased by more than four times compared to levels from the 1970s. Statistical reports indicate that annual damages caused by yellow dust amount to more than six trillion KRW. This study developed a zero-fog multi-layer mask with a collection efficiency and yellow dust and particulate matter filtration areas that are at least thrice as effective as existing masks. The new mask also reduces pressure drag by half.

• 한국세라믹학회지
• /
• 제39권12호
• /
• pp.1124-1127
• /
• 2002

In this paper, we studied the effects of the electron reflection on shadow mask on which the electron reflecting materials with $WO_3-ZnS:Cu.Al-PbO-SiO_2$ system were screen-printed and we evaluated the variation of the electron beam mislanding in CRT. As a result, the green emitted spectra on the electron reflecting layer are observed due to the transformation of the electron energy, when the electron impacted on shadow mask. The beam mislanding is reduced about 40% in comperision with that of CRT made by the conventional method.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.376-377
• /
• 2013

반도체산업이 발전함에 따라 패턴이 점점 더 복잡해 지고 있다. 이에 따라 웨이퍼 위에 올려지는 layer도 개수도 많아지고 점점 더 두꺼워진다. 예전에는 수백 nm였지만 최근에는 um단위까지 두꺼워지고 있다. 하지만 mask 역할을 하는 ACL과 substrate (SiO2)의 selectivity는 일정하기 때문에 mask 역할을 하는ACL layer 역시 두꺼워지는 것이 불가피하다. 이로인해 예전에는 없었던 문제들이 발생하기 시작한다. Mask 역할을 하는 ACL layer가 얇고 패턴 크기가 클 때에는 아무런 문제도 없었지만 ACL layer도 두꺼워 지고 패턴 크기도 수십 nm로 작아졌기 때문에 ACL 역시 식각 공정을 할 때 어려움이 생기기 시작한다. 이를 해결하기 위한 하나의 방법으로 자화된 ICP 챔버 substrate에 Dual bias frequency 인가하여 식각해 보고 이와같이 하였을 때 식각특성을 분석해 보았다. 자화된 ICP 챔버에서 substrate에 dual bias frequency를 인가함으로써 ion energy와 ion flux에 변화가 생기게 되고 이로 인해 다른 식각 특성이 나타나게 되었다. Dual bias frequency의 비율을 변화시켜 보고 변화에 따른 식각 특성을 분석해 보았다. 이와 같은 과정을 통하여 높은 주파수와 낮은 주파수의 각각의 변화에 따른 식각특성의 변화에 대한 이해를 할 수 있었다.