• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.23.2-23.2
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• 2006

• 전기의세계
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• v.28 no.1
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• pp.53-58
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• 1979

In the microwave heating system, a ferroresonant transformer is used to regulate the magnetron power fluctuation. For the simplification, nonlinear characteristics of the transformer and the magnetron are idealized to be piecewise linear. Dipped peak shape of the magnetron current is explained qualitatively by considering the fundamental and third harmonic frequency components in the circuit. Design equations providing the values of the leakage inductance, turn ratio of the transformer and the capacitance are derived analytically by cosnidering the fundamental frequency component only. The ferroresonant transformer is designed to obtain a required regulation and high input power factor from the derived design equations, and analytical calculations are compared with experimental measurements.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.183-183
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• 2011

TTFT(Transparent TFT)의 유전체로 사용되는 절연층으로 사용이 기대되는 yttrium oxide를 ITO 위에 RF magnetron sputtering법으로 상온 증착하고 구조적 특성을 분석하고 조성 및 표면 상태를 확인하였으며 유전 특성을 분석하였다.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.3
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• pp.107-112
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• 2003

Amorphous carbon nitride thin films have been deposited on silicon (100) by reactive magnetron sputtering method. The basic depositon parameters varied were the r.f. power(up to 250 W), the deposition pressure in the reactor(up to 100 mtorr) and Ar:$N_2$ gas ratio. FT-IR and X-ray photoelectron spectra showed the presence of different carbon-nitrogen bonds in the films. The surface topography of the films was studied by scanning electron microscopy(SEM) and atomic force microscopy(AFM).

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.140-145
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• 2001

This paper proposes to use a 20[kHz] phase­shifted Full-Bridge (FB) Zero-Voltage-Switched (ZVS) PWM converter in order to drive a 600[W] magnetron, and analyzes the operational modes in a switching period. Additionally, the controller of the average anode current is designed. Simulation studies and experiments verify that the proposed converter and the average anode current controller shows good performance to drive the magnetron.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.215-219
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• 2004

ZnO epitaxial films have been grown on a (0001)sapphire substrate by RF magnetron sputtering. The single crystalline ZnO films were grown at the condition of growth rate of about 0.1~0.2 $\mu\textrm{m}$/hr and the substrate temperature of $600^{\circ}C$. The film thickness was about 400~500 nm. The thin film quality and micro-structure have been evaluated by XRD and TEM observation.

• Journal of the Korean Society for Precision Engineering
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• v.12 no.9
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• pp.126-136
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• 1995

Copper magnetron anode of a microsave-over consists of an cylindrical outer-tube and various inner-vanes. The magnetron anode is produced by the complex processes; vane blanking, pipe cutting and silver-alloy brazing of vanes. Recently, the backward extrusion process for forming vanes has been developed to avoid the complex procedures. The developed process is analyzed by using upper-bound elemental technique (UBET). In the UBET analysis, the upper-bound load, the configuration and the vane-height of final extruded product are determined by minimizing the roral power consumption with repect to chosen parameters. To verify theoretical analysis, experiments have been carried out with pure plasticine billets at room temperature, using different web-thickness and number of vanes. The theoretical predictions both for forming load and vane-height are in reasonable agreement with the experimental results.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.441-447
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• 1996

Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.53 no.10
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• pp.625-633
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• 2004

This paper proposed a boost input type single stage resonant power supply for driving magnetron device. The proposed power supply can control both input power factor and output power at the same time. Also, because ZVS is achieved using the resonance between leakage inductance and resonant capacitance, switching losses are drastically reduced. To prevent breakdown or moding phenomenon of the magnetron due to excessive starting voltage, variable frequency ignition method is also proposed. Experimental results for the prototype power supply are presented and discussed to verify the validity of the proposed power supply.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.570-573
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• 2001

In this paper, GaN films have been grown on SiO$_2$/Si(100) substrates by RF magnetron sputtering. To obtain high quality GaN films, we used ZnO buffer layer and modified the process conditions. The charateristics of GaN films on RF power, substrate temperature and Ar/N$_2$gas ratio have been investigated by Auger electron spectroscopy and X-ray diffraction analysis. At RF power 150W, substrate temperature 500 $^{\circ}C$ and Ar/N$_2$=1:2 gas ratio, we could grow high quality GaN films. Through the atomic force microscope and photoluminescence analysises, it was observed that the crystallization of GaN films was improved with increasing annealing temperature and the optimal crystallization of GaN films was found at 1100 $^{\circ}C$ annealing temperature.