• Title/Summary/Keyword: Magnetotransport phenomena

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Magnetoconductance of a Hybrid Quantum Ring: Effects of Antidot Potentials

  • Kim, Nammee;Park, Dae-Han;Kim, Heesang
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.335.1-335.1
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    • 2016
  • The electronic structures of a hybrid magnetic-electric quantum ring and two terminal conductance taking into account the resonant backscattering via both magnetic and electric edge channels are studied. The hybrid magnetic-electric quantum ring is formed by a magnetic quantum dot combined with an additional antidot electrostatic potential at the center of the dot. Electrons are both magnetically and electrically confined to the plane. The antidot potential repelling electrons from the center of the dot plays an important role in the energy spectra and magnetoconductance. The angular momentum transition in the ground state and the behavior of magnetoconductance due to a change of the antidot potential are shown in comparison with the conventional magnetic quantum dot.

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Temperature dependence of permeability and magnetoimpedance effect in $Co_{70}Fe_5Si_{15}Nb_{2.2}Cu_{0.8}B_7$ ribbons

  • Phan, Manh-Huong;Kim, Yong-Seok;Quang, Pham-Hong;Yu, Seong-Cho;Nguyen Chau;Chien, Nguyen-Xuan
    • Proceedings of the Korean Magnestics Society Conference
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    • 2003.06a
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    • pp.88-89
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    • 2003
  • During the past decade, giant magnetotransport phenomena such as giant magetoresistance (GMR) in thin films and in manganese perovskites, and, giant magnetoimpedance (GMI) in soft magnetic amorphous ribbons, have brought much interest in the basic physical understanding and their applications as magnetic recording heads and in magnetic sensors technology. Among the parameters required for the quality of a magnetic sensor, temperature dependences of GMR and GMI profiles are playing an important role. In the present work, we have studied temperature dependences of the longitudinal permeability and giant magnetoimpedance effect in $Co_{70}$F $e_{5}$S $i_{15}$ N $b_{2.2}$C $u_{0.8}$ $B_{7}$ amorphous ribbons expecting as a promising candidate in the domain of magnetic sensors.rs.rs.rs.s.

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Ferromagnic Transitition Temperature of Diluted Magnetic III-V Based Semiconductor (III-V 화합물 자성 반도체의 강자성체 천이온도에 관한 연구)

  • Lee, Hwa-Yong;Kim, Song-Gang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05c
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    • pp.143-147
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    • 2001
  • Ferromagnetism in manganese compound semiconductors open prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds. Also it addresses a question about the origin of the magnetic interactions that lead to a Curie temperature(Tc) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally suggested for transition metals in 1950, can explain Tc of $Ga_{1-x}Mn_x$ As and that of its IT-VI counterpart $Zn_{1-x}Mn_x$ Te and is used to predict materials with Tc exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin. In this article, we present not only the experimental result but calculated Curie temperature by RKKY interaction. The problem in making III-V semiconductor has been the low solubility of magnetic elements, such as manganese, in the compound, since the magnetic effects are roughly proportional to the concentration of the magnetic ions. Low solubility of magnetic elements was overcome by low-temperature nonequilibrium MBE{molecular beam epitaxy) growth, and ferromagnetic (Ga,Mn)As was realized. Magnetotransport measurements revealed that the magnetic transition temperature can be as high as 110 K for a small manganese concentration.

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