• 한국자기학회지
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• 제6권3호
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• pp.189-193
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• 1996

Magnetoresistance field sensitivity and magnetostriction were measured as a function of annealing temperature for NiFe/Ag multilayer systems displaying giant magnetoresistance. Key multilayer configurations such as number of NiFe/Ag bilayers and Ag spacer thickness were varied. A high giant magnetoresistance ratio up to 5% with zero magnetostriction and high magnetoresistance field sensitivity was possible to achieve simultaneously with optimal sample geometry and annealing condition.

• 한국자기학회지
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• 제5권5호
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• pp.447-450
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• 1995

Using Boltzmaan equation by introducing the potential barrier scattering which buit by Hall-effect, a possible origin of giant magnetoresistance in multilayers is proposed. The calculated results may be well explain the giant magnetoresistance observed in multilayers.

• 한국표면공학회지
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• 제32권1호
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• pp.61-66
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• 1999

The Spin-dependent tunneling magnetoresistance (TMR) effect was observed in $NiFe/Al_2O_3$/Co thin films. The samples were prepared by magnetron sputtering in a system with a base pressure of $3\times10^{-6}$Torr. the insulating $Al_2O_3$layer was prepared by r.f. plasma oxydation method of a metallic Al layer. The ferromagnetic and insulating layers were deposited through metallic masks to produce the cross pattern form. The junction has an active area of $0.3\times0.3\textrm{mm}^2$ and the $Al_2O_3$layer is deposited through a circular mask with a diameter of 1mm. It is very important that insulating layer is formed very thinly and uniformly in tunneling junction. The ferromagnetic layer was fabricated in optimum conditions and the surface of that was very flat, which was observed by AFM. Tunneling junction was confirmed through nonlinear I-V curve. $NiFe/Al_2O_3$/Co junction was observed for magnetization behavior and magnetoresistance property and magnetoresistance property is dependent on magnetization behavior and magnetoresistance property and magnetoresistance property is dependent on magnetization behavior of t재 ferromagnetic layer. The maximum magnetoresistance ratio was about 6.5%.

• Journal of Magnetics
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• 제4권1호
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• pp.22-25
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• 1999

Recently we reported the evolutionary transition from the positive magnetoresistance to the negative was discovered in the transverse configuration as the thickness of permalloy film increases. The discovered peculiarities of positive magnetoresistance phenomenal were explained in the framework of the uniform rotation model of the film magnetization reversal.

• 한국안광학회지
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• 제12권2호
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• pp.13-17
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• 2007

열증착법으로 제작한 강자성체인 철박막에서 전류와 자기장이 이루는 각도의 변화에 따른 자기저항의 변화를 관찰하였다. 이방상자기저항현상에서 철박막인 경우에는 박막면이 중간자화용이축이므로 PMR 에서 NMR로의 전이가 $34^{\circ}$에서 일어나며 전류가 박막면에 수직인 현상에서는 자기저항피크간격이 니켈박막보다 더 크게 나타나지만 자기저항피크간격의 증가율은 비슷한 경향성을 보인다.

• 한국전기전자재료학회논문지
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• 제14권11호
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• pp.934-940
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• 2001

Magnetic properties were investigated for Si/SiO$_2$/NiFe(300 )/A1$_2$O$_3$(t)/Co(200 ) junction related with the parameters of $Al_2$O$_3$. Insulating $Al_2$O$_3$ layer was formed by depositing a 5~40 thick Al layer, followed by a 90~120s RF plasma oxidation in an $O_2$ atmosphere. Magnetoresistance was not observed for tunnel junction with 5~10 thick Al layer, but magnetoresistance was observed large for tunnel junction with 15~40 thick Al layer. Oxidation time did not largely influence magnetoresistance. Tunnel magnetoresistance effect depended on magnetization behavior of two ferromagnetic layers. Tunneling junction was confirmed through nonlinear I-V curve. In this work, tunneling magnetoresistance(TMR) up to 30 % was observed. This apparent TMR is an artifact of the nonuniform current flow over the junction in the cross geometry of the electrodes.

• 한국자기학회지
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• 제5권5호
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• pp.570-574
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• 1995

Magnetoresistance of NiFeCo/Cu/NiFeCo/FeMn uncoupled exchange biased sandwiches has been studied. The magnetoresistance change ratio, ${\Delta}R/R_{s}$ showed 4.1 % at a saturation field as low as 11 Oe in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(23\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. In this system, the magnetoresistance was affected by interlayer material and thickness. When Ti and Cu were used as the interlayer material in this structure, maximum magnetoresistance change ratio were 0.32 % and 4.1 %, respectively. 6.1 % MR ratio was obtained in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(15\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. The magnetoresistance change ratio decreased monotonically as the interlayer thickness increased. It was found that the exchange bias field exerted by FeMn layer to the adjacent NiFeCo layer was ~25 Oe, far smaller than that reported in NiFe/Cu/NiFe/FeMn spin valve structure(Dieny et. al., ~400 Oe). The relationship between the film texture and exchange anisotropy ha been examined for spin valve structures with Ti, Cu, or non-buffer layer.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2006년도 High Temperature Superconductivity Vol.XVI
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• pp.31-31
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• 2006

• 한국자기학회지
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• 제14권4호
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• pp.115-119
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• 2004

2쌍의 pick-up코일을 이용하여 퍼멀로이 박막의 면내 2차원 자화벡터를 측정하고 이방성자기저항을 조사하였다. 면내의 x, y축 방향의 모멘트를 동시에 측정함으로써 자화벡터를 정확하게 결정하였다. 퍼멀로이 박막의 이방성자기저항은 일축이방성이 증가할수록 전류와 자화벡터의 사잇각의 함수로 표현되는 관계식에 근접한 거동을 나타냈다. 자기저항비 변화는 전류방향에 평행한 y모멘트 성분의 변화와 잘 부합하였으며 y모멘트의 크기에 비례함을 알 수 있었다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2015년도 임시총회 및 하계학술연구발표회
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• pp.156-157
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• 2015

we have presented the enhanced interlayer tunneling magnetoresistance in doped $La_{1+2x}Sr_{2-2x}Mn_2O_7$ single crystal below $T_C$. The drastically out-of-plane magnetoresistance observed in magnetic fields perpendicular to the bilayers indicates that spin-polarized magnetic layers in single crystal show as a stack of ordered spin valve.