• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.5-32
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• 2000

MRAM, High performance MRAM using MTJS demostrated, fully integrated MTJ MRAM with CMOS circuits, write time ~2.3 nsec; read time ~3 nsec, Thermally stable up to ~350 C, Switching field distibution controlled by size & shape. Magnetic Tunnel Junction Properties, Magnetoresistance: ~50% at room temperature, enhanced by thermal treatment, Negative and Positive MR by interface modification, Spin Polarization: >55% at 0.25K, Insensitive ot FM composition, Resistance $\times$ Area product, ranging from ~20 to 10$^{9}$ $\Omega$(${\mu}{\textrm}{m}$)$^{2}$, Spin valve transistor, Tunnel injected spin polarization for "hot" electrons, Decrease of MTJMR at high bias originates from anode.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.386-392
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• 1996

The epitaxial TM/bcc-Cr(001) (TM=Fe, Co, Ni) multilayers have been prepared using MBE. The crystal structure, interlayer exchange coupling and magnetoresistance of those multilayers have been discussed. The structure of Fe, Co and Ni grown on bcc-Cr(001) exhibited bcc(001), distorted hcp(1120) and fcc(110), respectively. In Fe/Cr multilayes, an oscillatory exchange coupling has been observed, but not observed in Ni/Cr system, which may come from the large mixing at interfaces. Large MR ratio (116%, 4.2K) has been obtained in Fe/Cr system, but only 2% in Co/Cr system. This difference can be understood from the view point of the relative potential geight for down spin electrons between TM and Cr.

• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.121-125
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• 2009

Amorphous $Ge_1$_$_xMn_x$ semiconductor thin films grown by low temperature vapor deposition were annealed at various temperatures from 400 to $700^{\circ}C$ for 3 minutes in high vaccum chamber. The electrical and magnetotransport properties of as-grown and annealed samples have been studied. X-ray diffraction patterns analysis revealed that the samples still maintain amorphous state after annealling at $500^{\circ}C$ for 3 minutes and they were crystallized when annealing temperature increase to $600^{\circ}C$. Temperature dependence of resistivity measurement implied that as-grown and annealed $Ge_1$_$_xMn_x$ films have semiconductor characteristics, the increase of resistivity with annealling temperature was obseved. The $700^{\circ}C$-annealed sample exhibited negative magnetoresistance (MR) at low temperatures and the MR ratio was ${\sim}$8.5% at 10 K. The asymmetry was present in all MR curves. The anomalous Hall Effect was also observed at 250 K.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.131-131
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• 2000

We witnessed the enhancement of mangetoresistance (MR) in La0.75Ca0.25MnO3 thin films grown on Si (100) substrates by RF magnetron sputtering. The films are polycrystalline with (100) and (110) orientations. The lattice constants of films are reduced as much as 0.9% compared to the one of the bulk sample, which proves that the compressive stress on films was imposed by Si sbustrate. It is found that the MR value (Δ$\rho$/$\rho$0) of films are 0.33, 0.29 and 0.27 under a magnetic field of 1.5T for each films with deposition temperature of $700^{\circ}C$, 75$0^{\circ}C$ and 80$0^{\circ}C$, respectively. The correlation between the MR values and lattice constants of films is discussed. It is concluded that the compressive stress on films cause the enhancement of MR values of thin films grown on Si (1000 substrates. Some mechanism of compressive stress induced by Si substrate is suggested.

• Journal of Magnetics
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• v.15 no.4
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• pp.185-189
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• 2010

Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.271-274
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• 1998

Metallic ferromagnet LA$_{1-x}$ Sr$_{x}$MnO$_3$ has received considerable attentions because of its metallic conductivity and giant magnetic resistivity. It is generally believed that layered perovskite SrO(LA$_{1-x}$ Sr$_{x}$MnO$_3$)$_{n}$ phase is insulating and shows no metallic transition. But recent report revealed that some single crystal SrO(LA$_{1-x}$ Sr$_{x}$MnO$_3$)$_{n}$ phase showed MR effect. In this study, layered perovskite SrO(LA$_{1-x}$ Sr$_{x}$MnO$_3$)$_2$ Phases were synthesized by solid state reaction at 140$0^{\circ}C$ in air atmosphere, for wide range of x and their phases were confirmed by X-ray diffraction. Electrical and magnetic properties were measured down to 10K and the possibility of MR effects was investigated.as investigated.

• Journal of the Korean Ceramic Society
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• v.38 no.6
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• pp.551-557
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• 2001

La$_{0.7}$Ca$_{0.3}$MnO$_3$분말을 용액연소법으로 제조하였으며 분말 특성과 CMR에 응용하기 위해 박막의 전기적, 자기적 특성을 조사하였다. 조성과 구조 특성을 XRD와 SEM으로부터 조사하였으며 분말의 하소온도를 TG 분석으로부터 결정하였다. 또한 소결성은 dilatometer에 의해 조사되었으며 분말 특성은 BET에 의해 조사되었다. 소결성이 우수한 분말을 이용하여 스퍼터 타겟으로 제조하였으며 SiO$_2$/Si 기판 위에 스퍼터링한 후, 온도에 따른 four point probe 측정으로 막의 MR비를 측정하였다. VSM (Vibrating Sample Magnetometer)를 이용하여 증착된 막의 온도에 따른 자화율(Magnetization:M)을 측정하였다. 분말 특성으로는 평균입자 크기가 sub-micron 이하로 초미세하고 49.44$m^2$/g의 비표면적 값을 얻을 수 있었으며 고순도의 perovskite 구조를 갖는 La$_{0.7}$Ca$_{0.3}$MnO$_3$분말을 쉽게 얻을 수 있었다. 온도에 따른 저항값의 변화로부터 96K에서 최고의 MR값을 얻을 수 있었으며, 240K에서 강자성체로 전이되었다.로 전이되었다.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.210-219
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• 2000

The magnetoresistance characteristics of FeN/Co/Cu/Co and FeN/Co/Cu/Co/Cu/Co/FeN multilayers using ferromagnetic iron-nitrides (FeN) has been studied. The microstructure of FeN film is the mixed ${\alpha}$-Fe and $\varepsilon$-Fe$_3$N phase on the condition that the flow rate of N$_2$ gas is over 0.4 sccm. The magnetoresistance effect is observed because of shape magnetic anisotropy induced by needle-shaped $\varepsilon$-Fe$_3$N phase. This magnetoresistance effect changes, because the degree that the shape magnetic anisotropy adheres to the adjacent Co pinned layer is varied according to the flow rate of N$_2$ gas and the thickness of FeN film. The best magnetoresistance effect is obtained on the condition that the thickness of Co free layer is 70 ${\AA}$ and the maximum MR ratio(%) value of 3.2% shows in the FeN(250 ${\AA}$)/Co(70 ${\AA}$)/Cu(25 ${\AA}$)/Co(70 ${\AA}$)/Cu(25 ${\AA}$)/Co(70 ${\AA}$)/FeN(250 ${\AA}$) mutilayer film which is fabricated at the N, gas flow rate of 0.5 sccm and the FeN film thickness of 250 ${\AA}$. Four steps are observed in the magnetoresistance curve owing to this difference of coercive force, because respective magnetic layers in the multilayer possess different coercive forces. These effects observed in these mutilayer films can be expected to application to the memory device the same MRAM as can carry out simultaneously four signals.

• Journal of the Korean Magnetics Society
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• v.9 no.1
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• pp.41-47
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• 1999

$Buffer/[NiFe/Cu/CoFe(Co)/Cu]_N$ spin valve multilayers prepared by dc magnetron sputtering on a corning glass substrate using NiFe and CoFe(Co) posses different coercivities. Dependence of magnetoresistance on the type and thickness of buffer layer, thickness of Cu, NiFe, stacking number of multilayer, substrate temperature and annealing temperature in the form $[NiFe/Cu/CoFe(Co)/Cu]_N$ spin-valve multilayers were investigated. To evaluate effect of magnetoresistance for this samples, X-ray diffraction analysis, vibrating sample magnetometer analysis, and magnetoresistance measurement (4-probe method) were performed the maximum magnetoresistance ratio and coercivity were 7.5 % and 140 Oe, respectively for $Cr-50{\AA}/[NiFe-20{\AA}/Cu-{\AA}/Co-20{\AA}/Cu-50{\AA}]_10$ at substrate temperature of 9$0^{\circ}C$. Magnetoresistance slope maintained 0.25%/Oe until 15$0^{\circ}C$ of annealing temperature, and then decreased to 0.03%/Oe at 20$0^{\circ}C$. It was confirmed that the main factor of thermal stability was deteriorating of soft magnetic properties in the NiFe layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.73-82
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• 1998

The exchange anisotropy is the unidirectional magnetic anisotropy which comes from exchange interaction between antiferromagnetic layer and ferromagnetic layer. The application of this phenomenon to MR read head and spin-valve type GMR (Giant Magnetoresistance) head has been studied extensively. In our study, we intended to apply exchange anisotropy of NiO/NiFe bilayer to spin-valve type GMR element. Above all, we studied the exchange anisotropy of NiO/NiFe bilayer, and focused especially on the effect of NiO deposition condition. And we found that Ar pressure during NiO deposition was crucial factor for the exchange anisotropy of NiO/NiFe bilayer. The lower the Ar pressure is, the better the characteristics of exhange anisotropy is. Then, we applied this optimum condition of NiO/NiFe bilayer to spin-valve type GMR element. Finally we got spin-valve type GMR element which had 3.6 % MR ratio, 16 Oe switching field, and 0.25 %/Oe sensitivity.