• 제목/요약/키워드: Magnetoelastic strain sensor

검색결과 4건 처리시간 0.023초

마이크로 자기탄성스트레인센서의 고감토화 (Improvement of Sensitivity in Micro Magnetoelastic Strain Sensors)

  • 신광호;허진;최헌일;김영학;사공건
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.423-426
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    • 2001
  • Recently we have reported that the meander-patterned amorphous FeCoSiB films exhibit large change in their high frequency impedance by applying a strain, suggesting that the films are very attractive for making of a highly sensitive strain sensor elements. In this study, the effect of anisotropy on a change in the impedance of sputtered amorphous film patterns was investigated in the frequency range from 1MHz to 1GHz. As a function of applied strains, the high frequency impedance was extremely changed in the case of film patterns with transverse anisotropy due to excellent magnetomechanical coupling properties. As a summary, the maximum figure of merit f has measured about 2600 in the case of transverse anisotropy, and about 500 in the case of longitudinal anisotropy at 500 MHz. These values of F are approximately more than 1000 times higher than that of a conventional metal strain gauge (F 2) and more than 10 times higher than that of a semiconductor gauge (F 200).

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Magnetic Sensors and Actuators

  • Pasquale, M.
    • Journal of Magnetics
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    • 제8권1호
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    • pp.60-69
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    • 2003
  • A review of mechanical sensing techniques based on magnetic methods is presented, with special reference to magnetoelastic strain gauges and force sensors. A novel strain sensor based on soft amorphous ribbons is described. Other types of magnetic sensors, for the measurement of torque and displacement are briefly discussed. An overview of magnetic actuators based on giant magnetostrictive materials, with some practical examples, is presented. Recent advances in the development and application of magnetic shape memory materials are discussed, together with the analysis of recent studies for the description of magnetic shape memory phenomena.

아몰퍼스자성박막의 특성에 미치는 등방성 스트레인의 영향 (Effect of Isotropic Strain on Properties of Amorphous Magnetic films)

  • 신광호;김흥근;김영학;사공건
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.478-480
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    • 2001
  • Fe-base amorphous films exhibit large saturation magnetostriction and soft magnetic Properties, which make them suitable for strain sensor applications. Most important material properties for the performance of these elements are the superior soft magnetic properties, such as high permeability and small coercive force, as well as magnetoelastic properties. It is well known that the strain generated in film deposition and/or post-heat treatment processes is one of important material properties, which effects on the soft magnetic properties of the film via magnetoelastic coupling. In this study, the effect of an isotropic strain in plane of magnetic films have been performed experimently. Amorphous films with the composition of (F $e_{90}$ $Co_{10}$)$_{78}$S $i_{l2}$ $B_{10}$ were employed in this study. The film with 5${\mu}{\textrm}{m}$ thick was deposed onto the polyimide substrate with 50${\mu}{\textrm}{m}$ thick by virtue of RF sputtering. The film was subject to post annealing with a static magnetic field with 500Oe magnetic field intensity at 35$0^{\circ}C$ for 1 hour. The polyimide substrate with the film was bonded with an adhesive on PZT piezoelectric substrate with 600${\mu}{\textrm}{m}$ thick in applying voltage of 500V. The change in MH loops of films due to the isotropic strain was measured by using VSM. The coercive force was evaluated from MH loops. It has shown in the results that M-H loops of films are subject to change considerably with a dc voltage, resulting of the magnetization rotation from normal to plane direction as the applied voltage is changed from 500V to 250V.50V.V.

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아몰퍼스 FeCoSiB 박막의 고감도 스트레인 검출특성 (High Sensitive Strain Detection of FeCoSiB Amorphous Films)

  • 신광호;황정현일;사공건
    • 센서학회지
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    • 제9권1호
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    • pp.22-27
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    • 2000
  • 고자왜특성과 연자성특성을 가짐으로서 우수한 자기기계결합특성을 나타내는 아몰퍼스 FeCoSiB 박막의 스트레인 검출특성에 대해 연구하였다. 투자율은 박막기판을 마이크로메타를 이용하여 벤딩시켜 박막에 스트레인을 인가하면서 조사하였으며, 이때 박막에 스트레인이 인가되면 박막의 자기기계결합에 의해 투자율이 변화하였다. 스트레인에 의한 성능지수 $F=({\Delta}{\mu}/{\mu})/{\varepsilon}$ (단위스트레인에 대한 투자율의 변화)가 $1.2{\times}10^5$라는 매우 높은 값을 나타내어 본 연구에서 제작한 박막이 스트레인에 대하여 고감도특성을 가지고 있음을 알 수 있었다. 또한 제작된 박막을 센서소자로 응용하기 위해 박막을 미세 가공하고, 스트레인에 대한 고주파 임피던스의 변화를 조사하였으며, 박막의 우수한 자기기계결합특성으로 박막패턴의 임피던스는 인가된 스트레인에 의해 민감하게 변화되었다. 특히, 100MHz의 구동주파수에 있어서 $300{\times}10^{-6}$의 스트레인이 인가된 경우 46%의 임피던스변화율이 얻어졌다. 따라서 본 연구에서 제작한 박막소자는 초고감도의 스트레인 센서로 사용될 수 있을 것으로 기대된다.

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