• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1517-1519
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• 2003

A novel technique of alternating magnetic field (AMF) is investigated to improve the electrical conducting properties of pentacene. By applying AMF to pentacene layer, the electrical conductivity of pentacene was enhanced, which can be applied for characteristic improvements of pentacene-based thin-film transistors. In this study, the annealing effects of pentacene layer using AMF will be discussed.

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.111-120
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• 1999

The effects of annealing in rotating magnetic field after deposition on electromagnetic properties of $Co_{82}Zr_6Mo_{12}$ thin (200~1200 $\AA$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity decreases, but $4{\pi}M_5$ does not change with increasing the film thickness. The coercivity of the films was decreased below 300 $^{\circ}C$ due to stress relief and decreasing the surface roughness, while increased at 400 $^{\circ}C$ due to partial grain growth. And then, $4{\rho}M_5$ was almost independent of annealing temperatures below 200 $^{\circ}C$, but increased from 7.4 kG to 8.0 kG at 300 $^{\circ}C$ and at 400 $^{\circ}C$, which was caused by precipitation and growth of fine Co particles in the films. The electrical resistivity of films was decreased with increasing annealing temperatures and the magnetoresistance was a negative value of nearly 0 $\mu$$\Omega$cm. After annealing at 300 $^{\circ}C$, maximum effective permeability was 1200 to the hard axis of the thin films according to high frequency change. Considering the practical application of biasing layers of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at 300 $^{\circ}C$ in 400 Oe rotating magnetic field.

• Proceedings of the Korean Magnestics Society Conference
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• 2001.04a
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• pp.56-57
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• 2001

• Proceedings of the Korean Magnestics Society Conference
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• 1999.10a
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• pp.48-49
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• 1999

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.492-495
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• 2000

In order to develop an ultra-thin CoCr perpendicular magnetic recording layer, we prepared CoCrTa/Ti double layer for perpendicular magnetic recording media by new facing targets sputtering system, Crystallgraphics and magnetic characteristics of CoCrTa on underlayer substrate temperature have been investigated. Crystallgraphic and magnetic characteristic of thin films were evaluated by X-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and atomic force microscopy(AFM). The coercivity and anisotropy field was increased by increasing under layer substrate temperature, c-axis orientation of CoCrTa magnetic recording layer was improved 8$^{\circ}$ to 5.6$^{\circ}$when under layer substrate temperature was 250[$^{\circ}C$]. Also, through annealing effect for CoCrTa/Ti double layer, it was certain that crystallgraphics and magnetic characteristics was improved.

• Journal of Magnetics
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• v.12 no.1
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• pp.31-34
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• 2007

The Co-based ribbons with different length were annealed in different magnetic field and GMI profiles were investigated in order to clarify the influence of ribbon size on GMI effect. The GMI ratio decreased with the decreasing in length and also decreased with increasing annealing field. While, the slope of GMI profiles inclined and the field range showing linearity was broadened. It shows prospect to low field sensor, especially for a navigation sensor.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.196-198
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• 1996

The manufacturing process of the amorphous transformer core consists of winding, cutting, forming, annealing. Clamping of cores during this process are required for shape forming. Clamping of cores enhances the space factor, but degrades the magnetic properties and core loss characteristics of the cores. In this study, we investigated the optimal clamping pressure required in magnetic field annealing of 5 kVA amorphous transformer core.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.4
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• pp.379-384
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• 1992

The Fe-base amorphous ribbons with 15mm width and about 20x10S0-6Tm thickness, (FeS179-xTCrS1xT)BS116TSiS15T and (FeS181-xTMnS1xT) BS112TSiS17T (x:0-6), were prepared melt spinner. The thickness of the ribbons followed by PFC (Planar Flow Casting). The initial permeability and total core losses were measured as a function of additive elements (Cr, Mn) and annealing conditions in high frequency for the purpose of using these materials as a core of magnetic amplifier and switched mode power supplies. The initial permeabilities were enhanced and core losses were decreased by non-magnetic field annealing in proper conditions. The lowest core loss in 0.2T/10kHz was measured at 3% Cr addition amorphous ribbon, and the loss was 5.6W/kg. The permeability of the ribbon at 10kHz was about 9000.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.370-374
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.128-132
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing