• Journal of the Korean Magnetics Society
• /
• v.2 no.1
• /
• pp.61-68
• /
• 1992

Structural, magnetic and magneto-optical(1.0~3.2eV) properties of rare earth (Ce, Pr, Eu), transition metal(Ni, Co), and Al substituted polycrystalline Ba ferrite films grown by rf sputtering have been investigated. TEM studies revealed that crystal grains in the films were reduced in size from several hundred nm to the order of 1 nm with the decrease of rf power density during sputtering. By substituting Al, square hysteresis loops have successfully been obtained. It has been found that Niions strongly enhances Faraday rotation of the films in the visible range. It has been confirmed that Co ions also strongly enhances Faraday rotation of the films in the near infrared. En- hancement in Faraday rotation by Ce, Pr, and Eu ions has not been observed. The origin of the enhancement in magnetic and magneto-optical properties of the films is discussed.

• Applied Chemistry for Engineering
• /
• v.17 no.6
• /
• pp.591-596
• /
• 2006

Topology and molecular ordering of NPD(4,4'-bis-[N-(1-naphthyl)-N-phenyl-amino]biphenyl) thin films deposited under magnetic field with post-deposition annealing were investigated. NPD was deposited onto ITO glass substrates via thermal evaporation process in vacuum. It is of great importance for highly oriented organic/metal films to have improved device performances such as higher current density and luminance efficiency. AFM (Atomic Force Microscope) and XRD (X-Ray Diffraction) analyses were used to characterize the topology and structure of oriented NPD films. The multi-source meter was used to observe the current-voltage characteristics of the ITO (Indium-Tin Oxide) / NPD (4,4'bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl) / Al (Aluminum) device. While NPD thin films deposited under magnetic field were not molecularly well aligned according to the XRD results, the films after post-deposition annealing at $130^{\circ}C$ were well-oriented. AFM images show that NPD thin films deposited under magnetic field had a smoother surface than those deposited without magnetic field. The current-voltage performance of NPD thin films was improved due to the enhanced electron mobility in the well-aligned NPD films.

• Journal of Korean Vacuum Science & Technology
• /
• v.7 no.1
• /
• pp.8-12
• /
• 2003

The effects of lattice strain on the magnetic and the transport properties of La$_{0.8}$Sr$_{0.2}$MnO$_3$films grown on a LaAlO$_3$ (001) substrate and on a La$_{0.8}$Sr$_{0.2}$MnO$_3$ layer have been studied. It was observed that the metal-insulator and the ferromagnetic transitions turn out to be at higher temperatures for the film deposited on La$_{0.8}$Sr$_{0.2}$MnO$_3$ layer with respect to that on LaAlO$_3$. The dependence of Curie temperature on the bulk and the Jahn-Teller strains has also been determined. determined.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.60-60
• /
• 2011

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active research areas in spintronics. The high magnetoresistance and the high spin polarization (P) of electrons in the ferromagnetic electrodes of tunnel junction or intermediate layers are required. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, P ~ 100% spin polarization, and has a high Curie temperature (TC~850 K). Experiments demonstrated that the P~($80{\pm}5$)%, ~($60{\pm}5$)%, and ~40-55% for epitaxial (111), (110) and (001)-oriented Fe3O4 thin films, respectively. Epitaxial Fe3O4 films may enable us to investigate the effects of half metals on the spin transport without grain-boundary scattering.In addition, it has been reported that the Verwey transition (TV, a first order metal-insulator transition) of 120 K in bulk Fe3O4 is strongly affected by many parameters such as stoichiometry and stress, etc. Here we report that the growth modes, magnetism and transport properties of Fe3O4 thin films were strongly dependent on the oxygen pressure during film growth. The average roughness decreases from 1.021 to 0.263 nm for the oxygen pressure increase from $2.3{\times}10-7$ to $8.2{\times}10^{-6}$ Torr, respectively. The 120 K Verwey transition in Fe3O4 was disappeared for the sample grown under high oxygen pressure.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.408-408
• /
• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

• Journal of Korean Vacuum Science & Technology
• /
• v.5 no.2
• /
• pp.43-46
• /
• 2001

Fe-Au alloys are characterized by the complete solubility, and exhibit an fcc-bcc structural transformation at the Fe-rich side. The magneto-optical(equatorial Ken effect : EKE) and optical properties of Fe$\_$1-x/Aux (0 < x < 1) were investigated in the 0.5 - 5.0 eV energy range. The x-ray diffraction study shows the structural fcc-bcc transformation about 80 at. % of Fe. Noticeable changes in the optical properties caused by the fcc-bcc structural transformation was observed. The shape and intensity of the EKE spectra as well as the field dependence of the magneto-optical response were also significantly changed. It is thought that these changes are mainly comes from the induced magnetic moment in Au(and/or the emhanced magnetic moment of Fe). The nature of the prominent structure observed in the UV range of the magneto-optical Ken effect of Au/Fe multilayered films are disscussed in connection with the above results.

• Journal of the Korean Magnetics Society
• /
• v.15 no.2
• /
• pp.133-136
• /
• 2005

In the case of contacts between semiconductor and metal in semiconductor devices, they tend to be unstable because of thermal budget. To prevent these problems we deposited W-C-N diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of the barrier is $1,000{\AA}$ and the pressure is 3 mTorr during the deposition. In this work we coated LSMO (CMR material) on W-C-N diffusion barrier and then we studied the interface effects between LSMO layer and W-C-N diffusion barrier. We got results that the magnetic characteristics of LSMO thin film are still maintained after annealing at $800^{\circ}C$ for 3 hr because W-C-N thin diffusion barrier was prevented the diffusion of oxygen between LSMO and Si substrate.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2003.12a
• /
• pp.182-185
• /
• 2003

We have suggested an equivalent circuit model for switching performance of bipolar spin transistor composed of a nonmagnetic metal film (N) sandwiched between two ferromagnetic metal films (F1 and F2). The 'ON' or 'OFF' operation of this equivalent circuit model is simulated by depending on the orientation of the magnetization of F1 and F2 rather than the strength of the external magnetic filed. Changing the coupling coefficient, turn number of two inductances, (L1:L2) like a transformer, and parallel variable resistance R4 connected to L2 at the collector region, we can explain the magnetic characteristics and the dependence of magneto resistance ratio on the orientation of spin-polarized electrons.

• Journal of Magnetics
• /
• v.9 no.2
• /
• pp.37-39
• /
• 2004

Polycrystalline Ni-Mn-Ga films have been deposited onto mica substrates held at 720 K by flash-evaporation method. At room temperature the films have a tetragonal structure with a = b = 0.598 and c = 0.576 nm typical for bulk $Ni_2MnGa$ below a martensitic transformation. Temperature measurements of ferromagnetic resonance reveal a martensitic phase transformation at 310 K. The transformation brings about a substantial decrease in the effective magnetization and a drastic increase in the ferromagnetic resonance linewidth due to a strong increase in the magnetic anisotropy in the martensitic phase.

• Bulletin of the Korean Chemical Society
• /
• v.30 no.1
• /
• pp.114-118
• /
• 2009

A new Zn/O single source precursor, TMEDA-Zn$(eacac)_2$, has been synthesized by using N, N, N’, N’-tetramethylethylendiamine (TMEDA), sodium ethyl-acetoacetate, and $ZnCl_2$. From this organometallic precursor, ZnO thin films have been successfully grown on Si (100) substrates through the metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions in the temperature range of 390~430 ${^{\circ}C}$. The synthesized ZnO films have been found to possess average grain sizes of about 70 nm with an orientation along the c-axis. The precursor and ZnO films are characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, EI-FAB-spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.