• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.129.2-129.2
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.134.1-134.1
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2002.04a
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• pp.44-45
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• 2002

• Proceedings of the Korean Magnestics Society Conference
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• 2004.06a
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• pp.148-149
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• 2004

• Proceedings of the Korean Magnestics Society Conference
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• 2004.06a
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• pp.150-151
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• 2004

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.58-59
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• 2001

• Journal of Magnetics
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• v.6 no.3
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• pp.90-93
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• 2001

Co/$Al_O_3$/NiFe and CO/$Al_O_3$/Co tunnel junctions were fabricated by a radio frequency magnetron sputtering at room temperature with hard mask on glass and $4^{\circ}$ tilt cut Si (111) substrates. The barrier layer was formed through two steps. After the Al layer was deposited, it was oxidized in the chamber of a reactive ion etching system (RIE) with $O_2$plasma at various conditions. The dependence of the TMR value and junction resistance on the thickness of Al layer (before oxidation) and oxidation parameters were investigated. Magnetoresistance value of 7% at room temperature was obtained by optimizing the Al layer thickness and oxidation conditions. Circular shape junctions on $4^{\circ}$tilt cut Si (111) substrate showed 4% magnetoresistance. Photovoltaic energy conversion effect was observed with the cross-strip geometry junctions on Si substrate.

• Journal of Magnetics
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• v.14 no.1
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• pp.11-14
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• 2009

We investigated the I-V curves and differential tunneling conductance of two, CoFeB/MgO/CoFeB-based, magnetic tunnel junctions (MTJs): one with a low tunneling magnetoresistance (TMR; 22%) and the other with a high TMR (352%). This huge TMR difference was achieved by different MgO sputter conditions rather than by different annealing or deposition temperature. In addition to the TMR difference, the junction resistances were much higher in the low-TMR MTJ than in the high-TMR MTJ. The low-TMR MTJ showed a clear parabolic behavior in the dI/dV-V curve. This high resistance and parabolic behavior were well explained by the Simmons' simple barrier model. However, the tunneling properties of the high-TMR MTJ could not be explained by this model. The characteristic tunneling properties of the high-TMR MTJ were a relatively low junction resistance, a linear relation in the I-V curve, and conduction dips in the differential tunneling conductance. We explained these features by applying the coherent tunneling model.

• Journal of the Korean Magnetics Society
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• v.19 no.1
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• pp.1-4
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• 2009

Solving the stochastic Landau-Lifshitz-Gilbert equation numerically, we investigate the attempt frequency of magnetization in synthetic antiferromagnet (SyAF). The attempt frequency is estimated while varying the uniaxial anisotropy constant, the energy barrier and the geometry of a magnetic layer. It is found that the attempt frequency is decreased for the same magnetic volume by increasing the asymmetry of the geometry in the high damping region. Also, even for a constant height of energy barrier, the attempt frequency can vary dramatically with uniaxial anisotropy constant.

• Proceedings of the Korean Magnestics Society Conference
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• 2013.05a
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• pp.18-18
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• 2013

A FeRh alloy is a well-known efficient magnetocaloric material and some experimental and theoretical studies of bulk FeRh have been reported already by several groups. In this study we report first-principles calculations on magnetic properties of different thickness FeRh thin films in order to investigate the possibility to enhance further the magnetocaloric efficiency. We used Vienna Ab-initio Simulation Package (VASP) code. We found that the FeRh thin films have quite different magnetic properties from the bulk when the thickness is thinner than 6-atomic-layers. While bulk FeRh has a G-type antiferromagnetic (AFM) state, thin films which are thinner than 6-atomic-layers have an A-type AFM state or a ferromagnetic(FM) state. We will discuss possibility of magnetic phase transitions of the FeRh thin films in the view point of a magnetocaloric effect. And we found 4-, 5-, 6-layers films with Fe surface and 7-layers film with Rh surface are FM and they have dozens eV magnetocrystalline anisotropy (MCA) energy. MCA energy leads to determine energy barrier when magnetic states are changed by external magnetic field.