• 열처리공학회지
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• 제10권4호
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• pp.246-254
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• 1997

The 6.5wt %Si-Fe alloy sheets were made by the twin roll process. The magnetic properties and microstructures of sheets annealed in the sulfur atmosphere were studied. In the as-prepared sheet, non-oriented columnar grains about $10{\mu}m$ in diameter were observed, which grew from the surface to the inner part of the sheet. When the annealing temperature was around $700^{\circ}C$, the primary recrystallization was formed around the middle part of the sheet thickness, and the grain size increased with increasing annealing temperature. At the annealing temperature of $900^{\circ}C$, the grain size became $30{\sim}40{\mu}m$. Around the annealing temperature, the motive force of the grain growth is the grain boundary energy. However, above $1000^{\circ}C$ the surface energy played an important role in the observed grain growth. When the sheet were annealed at $1200^{\circ}C$, the grains whose (100) planes were paralled to the thin plate surface grew, and all sheet surfaces were covered with these grains after 1 hour annealing. This phenomenon is called tertiary recrystallization. A difference in surface energy between (100) and (110) surfaces provides a driving force for growth of tertiary grains. The coercive force was 0.27 mOe and the AC core loss $W_{12/50}$ was 0.38w/kg for the 6.5wt%Si-Fe alloy.

• Journal of Magnetics
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• 제4권1호
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• pp.5-9
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• 1999

Effect of sulfur segregation on tertiary recrystallization and magnetic induction during final annealing was investigated in a 3% Si-Fe electrical strip containing 6 ppm(LS) and 15 ppm(HS) sulfur. During final annealing, Auger peak height of segregated sulfur on the surface of the strips reached a maximum, and then decreased to low level with increasing annealing time, which is attributed to sulfur segregation and evaporation. The magnetic induction of the thin-gauged 3% Si strip was inversely proportional to the Auger peak height of segregated sulfur on the surface. The overall profile for surface segregation of sulfur and B10 was observed, irrespective of sulfur content in Si-Fe strips, but the peaks of LS strips appeared earlier than those of HS strips. The grain growth rate of the LS strips during final annealing was faster than that of the HS strips, which may be attributed to the pinning effects of segregated sulfur. With increasing final annealing temperature, B10 value increased rapidly and the saturation level in B10 increased.

• 한국자기학회지
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• 제5권5호
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• pp.478-482
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• 1995

The iron-based Metglas 2605S3A amorphous alloy ribbons are annealed at $435^{\circ}C$ for various periods from 5 to 210 min, and the effect of annealing is investigated on the dc magnetic properties of the ribbon. Typical square-type hysteresis loops are observed for the ribbons annealed fo 5 min, indicative of the nearly complete removal of residual stresses which are produced during melt-quenching. As the annealing time increases, the coercivity increases and the shape of hysteresis loops transforms to round type and finally to sheared one at the longest annealing time of 210 min. These results may be explained by the formation of clusters with chemical shortorder and very fine crystallites (at the annealing time of 210 min), and the diffusion-induced stresses during the formation of the clusters. For the samples annealed for 5 min, very good dc properties of the squareness ratio, coercivity and maximum permeability are observed, but, rather unexpectedly, the initial permeability is found to be very low. These results are considered to be due to a simple domain structure consisting of very small number of $^{\circ}$ domains.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1991년도 춘계연구발표회 논문개요집
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• pp.93-94
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• 1991

• Journal of Magnetics
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• 제7권3호
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• pp.63-71
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• 2002

Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

• 한국재료학회지
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• 제8권11호
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• pp.1038-1042
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• 1998

$Nd_5Pr_7Fe_{82}B_6$ 및 $Nd_{12}Fe_{82}B_6$ 조성의 1차 용유된 ingot에 대하여 기계적 분쇄처리 및 열처리를 행하고 결정구조 및 자기적 특성을 측정하였다. Ar 분위기 하에서 330시간 분쇄처리한 결과 $2~3\mu\textrm{m}$크기의 입자가 얻어졌으며, x-선 회절도로부터 각 입자는 미세한 결정립으로 구성되어 있음을 알았다. 330시간 분쇄처리된 분말을 $600^{\circ}C$에서 2시간 열처리함으로써 항자계가 18.36-18.79kOe, 최대에너지적이 8.32-8.38 MGOe인 자기적 특성을 얻었다. 열처리 온도가 높아지면 자기적 특성이 향상되었으나, 기계적 분쇄처리에 의한 ingot의 미세결정화 과정이 최적의 자기적 특성을 얻는데 더욱 중요하였다.

• 한국자기학회지
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• 제14권6호
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• pp.224-227
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• 2004

교환결합된 NiFe/FeMn 이중박막에서 Laser 열처리를 통하여 국소적인 자화반전을 연구하였다. 600 G의 외부 자기장을 시편에 가하면서 DPSS Laser로 자화 반전시켰으며, 300 mW에서 15분 동안 국소적인 부분을 조사하였다. 국소적으로 자화반전 시킨 박막을 다시 원래 방향으로 역 반전시켜 자기저항(MR)곡선 피크가 감소된 것을 관찰하였다. 이는 직접적으로 Laser를 가한 박막의 손상과 계면에서 내부 확산에 의한 것으로 생각된다 국소적인 반전 자화의 자구구조는 MU을 통하여 관찰하였다. 자화반전 영역에서 새로운 자구벽을 형성하였으며, Laser가 조사된 영역근처에서 자구벽이 형성된 것을 관찰하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 초전도 자성체
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• pp.3-6
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• 2002

Effect of Ag additive element on microstructure of $Fe_{87-x}Zr_7B_6Ag_x$, magnetic thin films on Si(001) substrates has been investigated using Transmission Electron Microscopy(TEM) and X-ray Diffraction(XRD). All samples with additive Ag element were made by DC-sputtering and subjected to annealing treatments of $300^{\circ}C{\siim}600^{\circ}C$ for 1 hr. TEM and XRD showed that perfectly amorphous state in Ag-free Fe-based films was observed in as-deposited condition. The as-deposited Fe-based films with the presence of Ag constituent have a mixture of Fe-based amorphous and nano-sized Ag crystalline phases. In this case, additive element, Ag was soluted into Fe-based matrix. With the increase in additive element, Ag, insoluble nano-crystalline Ag particles were dispersed in the Fe-based amorphous matrix. Crystallization of Fe-based amorphous phase in the matrix of $Fe_{82}Zr_7B_6Ag_5$ thin films occurred at an annealing temperature of $400^{\circ}C$. Upon annealing, the amorphous-Ag crystalline state of Fe-Zr-B-Ag films was transformed into the mixture of Ag crystalline phase + Fe-based amorphous phase + ${\alpha}$-Fe cluster followed by the crystallization process of ${\alpha}$-Fe nanocrystalline + Ag crystalline phases.

• Journal of Magnetics
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• 제6권1호
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• pp.1-4
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• 2001

We have used acetic acids ethanol and distilled water as a solvent to synthesize $La_{2/3}Sr_{1/3}Mn_{0.99}{^{57}}Fe_{0.01}O_3$(LSMFO) precursor. Crack-free LSMFO granular polycrystalline thin films have been deposited on thermally oxidized silicon substrates by spin coaling. The dependence of crystallization, surface morphology, magnetic and transport properties on annealing temperature was investigated. With increasing annealing temperature, the metal-semiconductor (insulator) transition temperature and the magnetic moment decrease while the resistivity increases. The lattice constants remain almost unchanged. For LSMFO thin films, spin-dependent interfacial tunneling and/or scattering magnetoresistance were observed. Our results indicate that the annealing temperature is very important in determining the intrinsic and extrinsic magnetotransport properties.

• Journal of Magnetics
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• 제7권2호
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• pp.59-62
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• 2002

Magnetic tunnel junctions (MTJs) were fabricated with high bias for plasma oxidation and the effects of annealing on the temperature dependence of tunneling magnetoresistance (TMR) were investigated experimentally. As-grown, TMR increases, peaks around 160 K, and decreases with increasing temperature from 80 K to 300 K. When MTJs are annealed, $T_{max}$, the temperature at which maximum TMR is obtained, decreases as annealing temperature increases to the optimal point. In order to explain this abnormal temperature dependence of TMR, the difference of conductance between parallel and antiparallel alignments of magnetizations as a function of temperature is also analyzed. The shifts of $T_{max}$ due to annealing process are described phenomenologically with spin-dependent transfer rates of electrons tunnel through the barrier.