• Journal of the Korean Magnetics Society
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• v.23 no.3
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• pp.98-103
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• 2013

The magnetic easy axis of the ferromagnetic layer for the dual-type GMR-SV (giant magnetoresistance-spin valve) having NiFe/Cu/NiFe/IrMn/NiFe/Cu/NiFe multuilayer structure controlled by the post annealing treatment. The magnetoresistive curves of a dual-type IrMn based GMR-SV depending on the direction of the magnetic easy axis of the free and the pinned layers are measured by the different angles for the applied fields. By investigating the switching process of magnetization for an arbitrary measuring direction, the optimum annealing temperature having a steady and isotropy magnetic sensitivity of 2.0 %/Oe was $105^{\circ}C$. This result suggests that the in-plane orthogonal magnetization for the dual-type GMR-SV film can be used by a high sensitive biosensor.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.880-882
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• 2002

We have prepared magnetic thin films of FeSiB by sputtering and examined microstructure and magnetic properties of the annealed films in order to investigate the feasibility of the films to microsensor application. Effects of vacuum annealing on the magnetic properties of $Fe_{84}$$Si_{6}$$B_{10}$ films have been examined as a function of temperature. The heating rate and the holding time were 10 K/min and 1 hour, respectively. Vacuum condition was held during cooling to prevent oxidation of the films. The coercivity did not show any noticeable change (~1500 A/m), although the grain size of the crystalline phase in the annealed films increased gradually up to about 16 nm until 673 K. However, both the grain size and the coercivity increased steeply when the annealing temperature increased over 723 K. Since the saturation magnetization is closely related to the phase evolution, the variation of the saturation magnetization of the annealed films was similar to that of the ribbon materials; the thin films were transformed from amorphous to crystalline with $\alpha$-(Fe,Si) phase by increasing annealing temperature.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.236-238
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• 1990

For improving magnetic properties of the amorphous Fe-B-Si alloy, we annealed in a magnetic field oriented in the plane of the ribbon longitudinal to its long axis. By field annealing, coercive force and total core loss are reduced from 0.04 Oe to 0.02 Oe, and from 0.25 watt/kg to 0.15 watt/kg respectively comparing with non-field annealed specimen. These reductions were caused by the formation of $180^{\circ}$ domains parallel to the annealing field due to the induced anisotorpy.

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.279-282
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• 2002

The effect of field annealing on the velocity changes of magneto surface acoustic wave (MSAW) devices has been investigated for deposited $(Fe_{1-x}Co_x)_{89}Zr_{11}$ (x = 0~1.0) amorphous films. By means of two step field annealing at $195^{\circ}C$ for 10 minute in the magnetic field of 130 Oe, the MSAW device with x=0.4 film among the devices showed the superior velocity change of 0.1 %. This gigantic value was obtained in the DC bias field of 40 Oe at the exciting frequency of 8.7 MHz. It was confirmed that such behavior was due to the variation of differential permeability caused by an optimal stress within the magnetic film.

• Journal of Magnetics
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• v.11 no.3
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• pp.103-107
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• 2006

In grain oriented electrical steel process, hot band annealing has thought to be essential for obtaining good magnetic properties. New hot rolling method of heavy reduction in early hot rolling stage was applied to obtain good magnetic properties in GO process without hot band annealing. Hot rolling was carried out by varyinghot rolling reduction distribution along hot rolling pass. The heavy hot rolling reduction in rear stand improves the magnetic flux density in the case of no hot band annealing. The hot band specimens of the heavy reduction in front stand shows the elongated hot deformed microstructures in the center layer and strong {001}<110> texture.On the contrary, the heavily reduced specimens in rear stand shows the recrystallization in the center layer of hot band and strong {111}<112> and {110}<001> textures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.519-522
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• 2000

The correlation of surface morphology and magnetic property of NiFe thin films on Si(001) deposited by RF-magnetron sputter has been investigated, using AFM, XRD and MR measurements. During short field annealing for 15 min, there was no significant change in XRD patterns of NiFe thin films. However, the degree of surface roughness was changed with increasing annealing temperature. With variation of surface roughness, there was significant difference in MR characteristics of NiFe thin films. In the case of as-deposited NiFe thin films(T$\_$G/ = 150$^{\circ}C$) and UFA400 (T$\_$A/ = 400$^{\circ}C$) having smooth surface, good linearity of MR Curve was observed.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.04a
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• pp.138-139
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• 2002

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.28-33
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• 2011

This paper describes the fabrication of AlN thin films containing iron and iron nitride particles, and the magnetic and electrical properties of such films. Fe-N-Al alloy films were deposited in Ar and $N_2$ mixtures at ambient temperature using Fe/Al composite targets in a two-facing-target DC sputtering system. X-ray diffraction results showed that the Fe-N-Al films were amorphous, and after annealing for 5 h both AlN and bcc-Fe/bct-$FeN_x$ phases appeared. Structure changes in the $FeN_x$ phases were explained in terms of occupied nitrogen atoms. Electron diffraction and transmission electron microscopy observations revealed that iron and iron nitride particles were randomly dispersed in annealed AlN films. The grain size of magnetic particles ranged from 5 to 20 nm in diameter depending on annealing conditions. The saturation magnetization as a function of the annealing time for the $Fe_{55}N_{20}Al_{25}$ films when annealed at 573, 773 and 873 K. At these temperatures, the amount of iron/iron nitride particles increased with increasing annealing time. An increase in the saturation magnetization is explained qualitatively in terms of the amount of such magnetic particles in the film. The resistivity increased monotonously with decreasing Fe content, being consistent with randomly dispersed iron/iron nitride particles in the AlN film. The coercive force was evaluated to be larger than $6.4{\times}10^3Am^{-1}$ (80 Oe). This large value is ascribed to a residual stress restrained in the ferromagnetic particles, which is considered to be related to the present preparation process.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.182-187
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• 2001

The purpose of this study is to investigate the degradation of soft magnetic properties of Fe-Hf-N thin films after annealing in vacuum. They were annealed at 450℃∼650℃. The microstructure and crystal phase of the selected area of the thin films were analyzed by TEM and SAD. After annealing at 450℃-600℃, the coercivity of the films increased by 0.2 Oe and the effective permeability decreased by 1500 as compared with them before annealing due to the growth of α-Fe crystallites. The saturation magnetic flux density of the films increased by 0.5 KG after annealing under 600℃. However, the soft magnetic properties of the film annealed at 650℃ degraded abruptly, which was attributed to the destruction of nano-crystalline microstructure of the film due to the rapid growth of α-Fe crystallites with the segregation of N sited in the α-Fe lattice into HfN.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.233-238
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• 2003

Ferromagnetic tunnel junctions, Ta/Cu/Ta/NiFe/Cu/$Mn_{75}$ $Ir_{25}$ $Co_{70}$ $Fe_{30}$/Al-oxide, were fabricated by do magnetron sputtering and plasma oxidation process. The effect of annealing temperature on the local transport properties of the ferromagnetic tunnel junctions was studied using contact-mode Atomic Force Microscopy (AFM). The current images reflected the distribution of the barrier height determined by local I-V analysis. The contrast of the current image became more homogeneous and smooth after annealing at $280^{\circ}C$. And the average barrier height $\phi_{ave}$ increased and its standard deviation $\sigma_{\phi}$ X decreased. For the cases of the annealing temperature more than $300^{\circ}C$, the contrast of the current image became large again. And the average barrier height $\phi_{ave}$ decreased and its standard deviation $\sigma_{\phi}$ increased. Also, the current histogram had a long tail in the high current region and became asymmetric. This result means the generation of the leakage current that is resulted from the local generation of a low barrier height region. In order to obtain the high tunnel magnetoresistance(TMR) ratio, the increase of the average barrier height and the decrease of the barrier height fluctuation must be strictly controlled.led.