• Journal of the Korean Vacuum Society
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• v.3 no.1
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• pp.122-129
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• 1994

MWPECVD법으로 CH3CHO-H2 계와 CH4-H2-O2 계로부터 Si 기판 위에 다이아몬드박막을 성장 시키고 성장된 박막을 SEM XRD 및 Raman 분광기로 평가하고 박막과 입자의 성장률을 조사하였다. 마이크로 판전력 950W 반응관압력 80torr 수소유량 200sccm 기판온도 95$0^{\circ}C$ 및 CH3CHO농도 3.5%로 5시간 성장시킨 다이아몬드의 박막성장율은 $4mu$m/hr가 되어고 12%$960^{\circ}C$로 Si기판 위에 5시간 성장시킨 다이아몬드의 박막성장율은 3.2$\mu$m/hr가 되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.132-135
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• 1992

Diamond thin films by MWPECVD in methane-hydrogen mixed gas were studied, with emphasis on the investigation of the effect of discharge power and pressure. As a result, the growth rate of diamond thin films was affected by discharge power and the surface morphology of diamond thin films was affected by pressure. The growth rate of diamond films was about 1.65 ${\mu}m$/hr under the condition of MW power: 900W, pressure: 60torr, $H_2$ flow rate: 60sccm, $CH_4$ concentration: 1 % and deposition time: 5hr. The deposited diamond films were identified by SEM, XRD and Raman spectrophotometer.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1493-1495
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• 1994

Study on the effect of hydrogen flow rate and $CH_4$ concentration in deposition of the diamond thin films by MWPECVD diamond thin films were deposited on Si substrate from $CH_4-H_2-O_2$ system by MWPE CVD, and identified by SEM, XRD and Raman spectroscopy. The flow rate of hydrogen didn't affect the surface morphology and crystallity of diamond thin films, but did slightly affect growth rate. When the concentration of oxygen was fixed at 40%, the growth rate and crystallity of diamond thin films were gradually improved according to increasment of concentration of $CH_4$ but growth rate of the thin films showed peak at 7% and the crystallity showed peak at 6%.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.146-147
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• 1994

• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.151-152
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• 1994

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.470-475
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• 1996

Fiber-textured diamond films have been deposited on scratched silicon(100) substrate by micro wave .plasma enhanced chemical vapor deposition at the condition of micro wave power : 950 W, pressure : 60 torr, H$_{2}$ gas flow rate : 50 sccm, CH$_{4}$ gas flow rate : 1.5 sccm, substrate temperature : about 900.deg. C and deposition time : 20 hours. The films were characterized by mean of scanning electron microscopy, Raman spectroscopy and X-ray analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.366-369
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• 1999

Synthetic diamond films have been deposited on the silicon(100) surface and molybdenum substrates using an microwave plasma enhanced vapor deposition (MWPECVD) method. The effect of deposition time, surface morphology, X-ray diffraction pattrm, infrared transmittance and Raman Scattering have been studied, The diamond film deposited on Mo substrate for (100) hours at 40 torr H$_2$-CH$_4$O$_2$ gas system have been shown 1${\mu}{\textrm}{m}$/h of growth rate and good crystallization

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.791-794
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• 2003

DLC thin films were prepared by microwave plasma-enhanced chemical vapor deposition method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas mixture. The negative DC bias ($-450V{\sim}-550V$) was applied to enhance the adhesion between the film and the substrate. The films were characterized by Raman spectrometer. The surface morphology was observed by an atomic force microscope (AFM). And also, the friction coefficients were investigated by AFM in friction force microscope (FFM) mode, which were compared with the pin-on-disc (POD) measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.842-845
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• 2003

DLC thin films were prepared by microwave plasma-enhanced chemical vapor deposition method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas mixture. The negative DC bias ($-450V{\sim}-550V$) was applied to enhance the adhesion between the film and the substrate. The films were characterized by Raman spectrometer. The surface morphology was observed by an atomic force microscope (AFM). And also, the friction coefficients were investigated by AFM in friction force microscope (FFM) mode, which were compared with the pin-on-disc (POD) measurement.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1490-1492
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• 1994

Diamond thin films were deposited on Si substrate from $CH_4-H_2-O_2$ system by MWPECVD at the condition of power of 800W, pressure of 80torr, $H_2$ flow rate of $75{\sim}81sccm$, $O_2$ flow rate of $0{\sim}3.8sccm$, $CH_4$ flow rate of $4.8{\sim}9sccm$, substrate temp, of $950{\sim}1010^{\circ}C$ and deposition time of 5hr. The deposited films were characterized by SEM, XRD and Raman spectroscopy. The growth rates of thin films and particles was measured. Good quality were synthesized at 40% of oxygen concentration which 6% of fixed metane concentration, and at 50%. Its deposition rates were $2.4{\mu}m/h$ respectively. As oxygen concentration increased, it was known that the broad peak of $1350 cm^{-1}$ was shifted to $1332cm^{-1}$ due to etching of carbon component.