• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.6
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• pp.367-374
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• 2000

This paper presents a method to fabricate freestanding structures by (100) silicon anisotropic etching and nickel electroless plating. The electroless plating process is simpler than the electroplating, and provides good coating uniformity and improved mechanical properties. Furthermore, the (100) silicon anisotropic etching in KOH solution with being aligned to <100> direction provides vertical (100) sidewalls on etched (100) surface. In this paper, the effects of the nickel electroless plating condition on the properties of electroless plated metal structures are investigated to apply fabrication of micro structures and then various micro structures are fabricated by nickel electroless plating. And then, the structures are released by silicon anisotropic etching in KOH solution with a large gap between the structure and the substrate. The fabricated cantilever structures are $210\mum$. wide, $5\mum$. thick and $15\mum$. over the silicon substrate, and the comb structure has the comb electrodes which are $4\mum$. wide and $4.3\mum$. thick separated by$1\mum$. It is released by silicon anisotropic etching in KOH solution. The gap between the structure and the substrate is $2.5\mum$.

• Journal of Aerospace System Engineering
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• v.15 no.1
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• pp.56-62
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• 2021

The purpose of this study was to address a Remote Airborne Control Simulator that could simulate manned-unmanned teaming (MUM-T mission) for fixed wing UAV. With rapid technological development of unmanned aerial vehicle (UAV), the mission capability of UAV has tremendously grown. The role of UAV extends from simple reconnaissance to highly automated wingman. Accordingly, the requirement of UAV ground simulator should be modified as well to meet function requirements for simulating a MUM-T mission. A developed remote airborne control simulator was developed for conducting fixed wing UAV MUM-T operation simulations on the ground. The newest MUM-T examples, usage, and application of the developed remote airborne control simulator for MUM-T simulation are also presented in this study.

• ETRI Journal
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• v.14 no.1
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• pp.52-65
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• 1992

전자선 직접묘사 (E-beam direct writing lithography) 방법을 이용하여 $0.2\mum$ 과 $0.3\mum$ 의 게이트길이를 가지는 NMOS 트랜지스터를 제작하였다. 게이트만 전자선 직접묘사 방법으로 정의하고 나머지는 optical stepper를 이용하는 Mix & Match 방식을 사용하였다. 게이트산화막의 두께는 최소 6nm까지 성장시켰으며, 트랜지스터구조로서는 lightly-doped drain(LDD) 구조를 채택하였다. 짧은 채널효과 및 punch through를 줄이기 위한 방안으로 채널에 깊이 붕소이온을 주입하는 방법과 well을 고농도로 도핑하는 방법 및 소스와 드레인에 $p^-$halo를 이온주입하는 enhanced lightly-doped drain(ELDD) 방법을 적용하였으며, 제작후 성능을 각각 비교하였다. 제작된 $0.2\mum$의 게이트길이를 가지는 소자에서는 문턱전압과 subthreshold기울기는 각각 0.69V 및 88mV/dec. 이었으며, Vds=3.3V에서 측정한 포화 transconductance와 포화 드레인전류는 각각 200mS/mm, 0.6mA/$\mum$이었다. $0.3\mum$소자에서는 문턱전압과 subthreshold 기울기는 각각 0.72V 및 82mV/dec. 이었으며, Vds=3.3V에서 측정한 포화 transconductance는 184mS/mm이었다. 이러한 결과는 전원전압이 3.3V일 때 실제 ULSI에 적용가능함을 알 수 있다.

• Journal of Aquaculture
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• v.10 no.2
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• pp.97-103
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• 1997

Larval growth of the oyster, Crassostrea nippona, was investigated at the different conditions such as water volume, depth of culture vessel and initiative feeding time at $23^{\circ}C$. As a result, morphological changes were occurred during the early larval growth. That is, shell length was higher than shell height at the time of D-shaped larvae. Later, the length became equal to the hight when their shell length reached $127\mum$and then shell height increased rapidly. Some of pediveliger larvae with the size of $360\mum\;in\;shell\;length\;and\;385\mum$ in shell height began to temporarily settle on the substrate after 18 days. The result also indicated that the depth of culture vessel turned out to be an important factor rather than water volume for the larval growth. The fist feeding time of oyster larvae appeared to be the first day after fertilization.

• The Korean Journal of Zoology
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• v.26 no.2
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• pp.107-123
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• 1983

The globus pallidus of normal cats were prepared for electron microscopic study following perfusion with a mixture of 1% paraformaldehyde and 1% glutaraldehyde solution. Neurons of two size categories were identified in 1 $\\mu$m araldite sections and their ultrastructural characteristics were studied in adjacent thin section. 1. Large neurons ($30 \\mum \\times 45 \\mum$ in diameter) had extensive areas of rough surfaced endoplasmic reticulm, abundant perinuclear Golgi complex, numerous mitochondria and lipofusin granule, and had a large spherical nucleus with shallow indentation of nuclear manbrane. Small neurons ($17 \\mum \\times 27 \\mum$ in diameter) had poorly rough surfaced endoplasmic reticulum, moderate number of mitochondria and randomly distributed Golgi complex. The nuclear envelope of this cell frequently showed multiple deep invagination. 2. Three types of axo-somatic synapses were identified on the basis of the size and shape of vesicle in the axon terminal and the symmetrical or asymmetrical thickening at the synaptic site. Type I synaptic terminal shows an even distribution of round and oval synaptic vesicles, and has a symmetrical synaptic thickening. Type II axon terminals reveal mostly round and pleomorphic vesicles and a few vesicles were localized near the presynaptic membrane in pale axoplasm and its synaptic thickening were symmetric. Type III axon terminals contain round vesicles, which were aggregated in the axoplasm, and has a asymmetrical synaptic thickening. 3. The majority of axo-somatic contact with the large and small neurons were type I, and type II and III synapes were rare.

• Korean Journal of Optics and Photonics
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• v.6 no.3
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• pp.188-200
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• 1995

A design of unit magnification 2-mirror system with high resolution is presented. It is for soft X-ray(wavelength of 13 nm) projection imaging and suitable for preparation of high density semiconductor chip. In general, a holosymmetric system with unit magnification has the advantage that both coma and distortion are completely eliminated. In our holosymmetric 2-mirror system, spherical aberration is addtionally removed by using two identical paraboloidal mirror surfaces and field curvature aberration is also corrected by balancing Petzval sum and astigmatism which depends on the distance between two mirrors, so that the system is a aplanatic flat-field paraboloidal 2-mirror holosymmetric system. This 2-mirror system is small in size, and has a simple configuration with rotational symmetry about optical axis, and has also small central obscuration. Residual finite aberrations, spot diagrams, and diffraction-based MTF's are analyzed for the check of performances as soft X-ray lithography projection system. As a result, the image sizes for the resolutions of$0.25\mum$and $0.18\mum$are 4.0 mm, 2.5 mm respectively, and depths of focus for those are $2.5\mum$, $2.4\mum$respectively. This system should be useful in the fabrication of 256 Mega DRAM or 1 Giga DRAM. DRAM.

• Proceedings of the Membrane Society of Korea Conference
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• 1998.10a
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• pp.133-136
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• 1998

0.1 내지 $4 \mum$의 입도분포를 가진 kaolin용액을 dead-end형 여과 장치(Amicon Cell, 8050)를 이용하여 공칭세공이 $0.2 \mum$인 PTFE막으로 농도 및 운전압력에 따른 투과실험을 하였다. Kaolin 용액의 투과유속은 케이크 저항이 지배적이었으며 초기에는 분리막 표면에 케이크가 형성되고 그 후에 분리막 세공의 오염이 발생하는 것으로 관찰되었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.5
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• pp.1151-1156
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• 2000

In this paper, we report a fabrication of InP-based microstructurs for III-V compound semiconductor micromachining. Vertical liquid phase epitaxy(LPE) system was used in order to grow the InP/lnGaAsP/InP layers. The thicknesses of InP top-layer and InGaAsP were $1\mum \;and \;0.4\mum$, respectively. The fabrication of InGaAsP microstructures involves front-side bulk micromachining. The experimental result showed the beams must be carefully aligned in the <100> direction since the etching of the beam in the <100> direction is more faster than that of the beam in the <110> and <110> direction.

• ETRI Journal
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• v.14 no.3
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• pp.75-96
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• 1992

이중 매몰층, $1.5\mum$ 에피두께, 이중 well, LOCOS 소자격리, LDD MOS 소자와 이중 다결정실리콘 전극을 갖는 바이폴라 소자에 의하여 구성된 BiCMOS 소자를 제작하였다. 제작된 소자를 측정 및 분석한 결과, 31단 CML 바이폴라($A_E=2X8\mum^2$)링 발진기와 31단 CMOS( $A_E=1.25X5\mum^2$) 인버터 링 발진기로부터 94ps/5V 와 330ps/12V의 게이트 전달 지연시간/소자 강복전압을 갖는 바이폴라 및 MOS소자특성을 얻을 수 있었다. 또한 BiCMOS 소자의 경우, 31단 BiCMOS 링 발진기로부터 약 700ps의 게이트 전달 지연시간을 얻었으며, 출력부하의 증가에 따른 속도의 감속비가 완만한 전기적 특성을 얻을 수 있었다.

• Journal of the Korea Construction Safety Engineering Association
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• s.41
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• pp.80-87
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• 2007

The purpose of this paper is to investigate the removal efficiency of fine dusts as the configuration condition of machinery and equipments in Clean Room and to analyze the flowing behaviors of fine dusts as the layout of Clean Room. The layout of the Clean Room was classified into side layout type, 2 center line type and center concentration type layout, and the flow rates used in this research were 0.22m/s, 0.44m/s and0.80m/s. Dust removal efficiency as layout change was decreased 37% for side layout type, 31% for 2 centerline type and 20% for center concentration type layout at the flow rate of 0.22m/s, compared with the state without machinery and equipments in Clean Room. The efficiency was decreased 42% for side layout type,22% for 2 center line type and 8% for center concentration type layout at the flow rate of 0.44m/s, and decreased 20% for side layout type, 18% for 2 center line type and 10% for center concentration type layout at the flow rate of 0.80m/s. According to the result of dust removal behavior, $0.3\mum$, $1\mum$and $3\mum$dust except for $5\mum$showed the higher change of the behavior in side layout type than in center concentration type layout due to the change of air flow. It was confirmed that removal behavior depends on the layout of machinery and equipments as the dust size decreases.