• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.77-77
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• 2011

These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

• Korean Chemical Engineering Research
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• 제43권1호
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• pp.76-79
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• 2005

Magnetic random access memory(MRAM) 소자재료로 사용되고 있는 NiFe, NiFeCo, Ta 등의 박막을 $Cl_2/Ar$ 유도 결합 플라즈마를 이용하여 식각하였다. NiFe와 NiFeCo의 식각 속도는 특정 ICP 공급 전력에서 최대값을 나타냈지만, Ta의 식각 속도는 ICP 공급 전력이 증가함에 따라 증가하였다. RF 하부전극 전력이 증가하면서 자성박막의 식각 속도는 증가하였지만, 공정압력과 $Cl_2$의 농도가 증가함에 따라 점진적으로 감소하였다. 식각 후에 염소에 의한 표면 부식을 방지하기 위해 이온수로 5분간 세척하였다. 식각 프로파일은 $Cl_2$ 농도가 50%일 경우에 식각 단면에 식각 잔유물들이 존재하지 않는 부드러운 단면을 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 somma/kms meeting
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• pp.47-47
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• 2003

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2004년도 하계학술연구발표회 논문개요집
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• pp.18-19
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• 2004

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.60-61
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• 2002

현재 Magnetic Tunnel Junction는 고밀도 자기저항 헤드 및 비휘발성 메모리(MRAM)등의 자기저항 특성을 이용한 소자에 응용하기 위해 많은 연구가 진행되고 있다[1]. 하지만 Magnetic Tunnel Junction(MTJ)을 실제 소자로서 제작하여 사용하기 위해서는 smooth하고 pinhole이 없으며, 절연층 내부에 disorder나 defect가 없는 절연층을 형성해야 한다. (중략)

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.186.1-186.1
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• 2008

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.188.1-188.1
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• 2008

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.67.2-67.2
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• 2008

• 대한임베디드공학회논문지
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• 제13권5호
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• pp.253-259
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• 2018

Recently, small satellite industries are rapidly changing. Demand for high performance small satellites is increasing with the expansion of Earth Observation Satellite market. A next-generation small satellites require a higher resolution image storage capacity than before. However, there is a problem that the HW configuration of the existing small satellite image storage device could not meet these requirements. The conventional data storing system uses SDRAM to store image data taken from satellites. When SDRAM is used in small satellite platform of a next generation, there is a problem that the cost of physical space is eight times higher and satellite price is two times higher than NAND Flash. Using the same satellite hardware configuration for next-generation satellites will increase the satellite volume to meet hardware requirements. Additional cost is required for structural design, environmental testing, and satellite launch due to increasing volume. Therefore, in order to construct a low-cost, high-efficiency system. This paper shows a next-generation solid state recorder unit (SSRU) using MRAM and NAND Flash instead of SDRAM. As a result of this research, next generation small satellite retain a storage size and weight and improves the data storage space by 15 times and the storage speed by 4.5 times compare to conventional design. Also reduced energy consumption by 96% compared to SDRAM based storage devices.