• Title/Summary/Keyword: MOS Switch

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Characterization and Comparison of Doping Concentration in Field Ring Area for Commercial Vertical MOSFET on 8" Si Wafer (8인치 Si Power MOSFET Field Ring 영역의 도핑농도 변화에 따른 전기적 특성 비교에 관한 연구)

  • Kim, Gwon Je;Kang, Ye Hwan;Kwon, Young-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.4
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    • pp.271-274
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    • 2013
  • Power Metal Oxide Semiconductor Field Effect Transistor's (MOSFETs) are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of an "ideal switch". The main drawback is on-resistance RDS(on) and its strong positive temperature coefficient. While this process has been driven by market place competition with operating parameters determined by products, manufacturing technology innovations that have not necessarily followed such a consistent path have enabled it. This treatise briefly examines metal oxide semiconductor (MOS) device characteristics and elucidates important future issues which semiconductor technologists face as they attempt to continue the rate of progress to the identified terminus of the technology shrink path in about 2020. We could find at the electrical property as variation p base dose. Ultimately, its ON state voltage drop was enhanced also shrink chip size. To obtain an optimized parameter and design, we have simulated over 500 V Field ring using 8 Field rings. Field ring width was $3{\mu}m$ and P base dose was $1e15cm^2$. Also the numerical multiple $2.52cm^2$ was obtained which indicates the doping limit of the original device. We have simulated diffusion condition was split from $1,150^{\circ}C$ to $1,200^{\circ}C$. And then $1,150^{\circ}C$ diffusion time was best condition for break down voltage.

MODE : Managed Objects(MOs) Development Environment for TMN-based ATM Network Management (MODE :TMN 체계의 ATM 망 관리를 위한 관리 객체 개발 환경)

  • Gang, Won-Seok;Kim, Gi-Hyeong;Kim, Yeong-Tak
    • The Transactions of the Korea Information Processing Society
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    • v.6 no.2
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    • pp.415-424
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    • 1999
  • Systematic telecommunication network management is essential for operating large-scale integrated networks which consist of various network components manufactured by different vendors. ISO and ITU-T recommend the CMIP-based TMN architecture for this purpose. TMN uses GDMO for the definition of managed objects, and various GDMO compilers have been developed. However, the development of management objects by using these compilers is still a difficult task. In this paper, we present a GUI-based managed objects development environment, MODE. MODE divides managed object codes by system independent code(SIC) and system dependent cede(SDC). By providing development environments for SIC and SDC, MODE can ease the development of managed objects. To show the efficiency of MODE, we develop the managed objects of an ATM switch in MODE.

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