• 제목/요약/키워드: MOKE

검색결과 30건 처리시간 0.019초

Enhancement of Magneto-optical Kerr Effect Signal from the Nanostructure by Employing Anti-reflection Coated Substrate

  • Kim, D.H.;You, Chun-Yeol
    • Journal of Magnetics
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    • 제13권2호
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    • pp.70-75
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    • 2008
  • In this study, a MOKE (Magneto-optical Kerr effect) measurement method for magnetic nanostructures is proposed. Theoretically, the MOKE signal enhancement can be predicted and confirmed when an anti-reflection coated substrate is used. Since MOKE is a ratio of reflectivity and the difference between the reflectivities for two magnetic states, when the reflectivity of the substrate part is reduced by employing an anti-reflection coated substrate, MOKE signal enhancement can be achieved. The enhancement is confirmed by simple numerical MOKE calculations. When the reflectivity of an anti-reflection coated substrate is 0.7%, the calculated MOKE signal is about 79% of its bulk values for the 100-nm wide Fe nanowire with a 1500-nm radius laser beam. It was found that, for various numerical calculations, a larger MOKE signal is obtained relative to a smaller substrate reflectivity.

Magneto-Optical Kerr Effect Enhancement Methods for Nanostructures

  • Kim, D.H.;You, Chun-Yeol
    • Journal of Magnetics
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    • 제14권1호
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    • pp.31-35
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    • 2009
  • Herein, the Magneto-Optical Kerr Effect (MOKE) signal enhancement in nanostructures in investigated. It is well known that the MOKE signals of ferromagnetic thin films are enhanced with an additional dielectric layer due to multiple reflections. The MOKE signal is modulated with the additional dielectric layer thickness and is at a maximum when reflectivity is at a minimum. This is not always true in the nanostructures due to the contribution from the non-magnetic substrate portion, especially when substrate reflectivity is minimized and the dependence of the additional dielectric layer thickness for the nanostructure is changed in the case of the continuous thin film. We showed that the MOKE signal for nanostructures could be enhanced with a properly designed, dielectric layer in addition to the anti-reflection coated substrates.

Magnetization Reversal of Exchange-biased Bilayers and Trilayers Probed using Front and Back LT-MOKE

  • Kim, Ki-Yeon;Kim, Ji-Wan;Choi, Hyeok-Cheol;You, Chun-Yeol;Shin, Sung-Chul;Lee, Jeong-Soo
    • Journal of Magnetics
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    • 제14권1호
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    • pp.36-41
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    • 2009
  • Magneto-optical Kerr effect (MOKE) magnetometry was used to investigate magnetization reversal dynamics in 30-nm NiFe/15-nm FeMn, 15-nm FeMn/30-nm CoFe bilayers, and 30-nm NiFe/(2,10)-nm FeMn/30-nm CoFe trilayers. The in-plane magnetization components of each ferromagnetic layer, both parallel and perpendicular to the applied field, were separately determined by measuring the longitudinal and transverse MOKE hysteresis loops from both the front and back sides of the film for an oblique incident s-polarized beam. The magnetization of the FeMn/CoFe bilayer was reversed abruptly and symmetrically through nucleation and domain wall propagation, while that of the NiFe/FeMn bilayer was reversed asymmetrically with a dominant rotation. In the NiFe/FeMn/CoFe trilayers, the magnetic reversal of the two ferromagnetic layers proceeded via nucleation and domain wall propagation for 2-nm FeMn, but via asymmetric rotation for 10-nm FeMn. The exchange-biased ferromagnetic layers showed the magnetization reversal along the same path in the film plane for the decreasing and increasing field branches from transverse MOKE hysteresis loops, which can be qualitatively explained by the theoretical model of the exchange-biased ferromagnetic/antiferromagnetic systems.

Magnetostatic Coupling Between two Nanowires of Different Width

  • Lee, Han-Seok;Kim, Seung-Ho;Chang, Young-Wook;Yoo, Kyung-Hwa;Lee, J.
    • Journal of Magnetics
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    • 제14권1호
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    • pp.15-17
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    • 2009
  • The magnetostatic interaction between the two magnetic nanowires was studied by using the longitudinal magneto-optical Kerr effect (MOKE). For this purpose two magnetic nanowires having different widths (400 nm, 800 nm) were fabricated on an Si substrate with electron beam lithography and the lift-off method. Magnetic hysteresis loops measured by MOKE showed double switching behavior, corresponding to the separated switching fields of each wire. The switching field of the narrow wire was greatly affected by the separation between the two wires. Based on how the switching field changes with decreasing separation, it is concluded that the magnetostatic field of the 800-nm wire strongly affects the switching of the 400-nm wire when the separation is less than $0.5{\mu}m$.

공기 중에서 자기장 열처리된 CoFeSiB 비정질 리본에서의 자기 바이어스 효과 (Magnetic Bias Effects in Field-annealed CoFeSiB Amorphous Ribbons)

  • 차용준;정종율;김철기;김동영;윤석수
    • 한국자기학회지
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    • 제19권6호
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    • pp.191-196
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    • 2009
  • 비대칭 거대 자기임피던스 효과를 보이는 자기장 열처리된 CoFeSiB 비정질 리본에서 자기 바이어스 현상을 MOKE 방법을 이용하여 연구하였다. 열처리 과정에서 리본의 양 표면에 형성된 경자성 결정층이 내부 연자성 비정질 상의 자화특성에 미치는 영향을 조사하기 위해 열처리 후 화학적 에칭에 의해 한쪽 및 양쪽 표면의 결정층을 깎아낸 시편들을 준비하고 각 시편에 대해 비정질 상의 자화곡선을 MOKE 방법으로 측정하였다. 열처리 과정에서 표면에 형성된 경자성층이 내부의 비정질 연자성 상에 바이어스 자기장을 작용하고 있다는 것과 바이어스 자기장의 방향이 경자성층의 자화방향에 반대 방향임을 자기이력곡선의 이동을 통해 확인하였다.

Spin Transport in a Ferromagnet/Semiconductor/Ferromagnet Structure: a Spin Transistor

  • Lee, W.Y;Bland, J.A.C
    • Journal of Magnetics
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    • 제7권1호
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    • pp.4-8
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    • 2002
  • The magnetoresistance (MR) and the magnetization reversal of a lateral spin-injection device based on a spin-polarized field effect transistor (spin FET) have been investigated. The device consists of a two-dimensional electron gas (2DEG) system in an InAs single quantum well (SQW) and two ferromagnetic $(Ni_{80}Fe_{20})$ contacts: all injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and, after propagating through the InAs SQW are collected by the second contact. By engineering the shape of the permalloy contacts, we were able to observe distinct switching fields $(H_c)$ from the injector and the collector by using scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20~60 Oe), at room temperature, over which the magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device.

CoB/Ru/CoB 박막 재료의 자화 거동 특성 분석 (Magnetization Behavior of CoB/Ru/CoB Thin Film)

  • 김동영;윤석수
    • 한국자기학회지
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    • 제23권5호
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    • pp.154-158
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    • 2013
  • 자성-금속-자성 삼층구조로 반강자성 결합 특성을 갖는 박막 재료의 자화 곡선은 두 자성박막 각각의 자화량($M_1$, $M_2$) 변화 특성을 반영한다. 본 연구에서는 반강자성 결합 특성을 갖는 CoB/Ru/CoB 박막 재료의 두 자성 박막의 총자화량($M_{tot}=M_1+M_2$)과 상부 단일 박막의 자화량($M_1$)의 이론적 값을 Stoner-Wohlfarth 모델로 계산하였다. VSM으로 측정한 총자화량은 자기장의 반전에 따라 가역 특성을 보였으며, CoB/Ru/CoB 재료의 플롭자기장($H_F$)은 약 50 Oe였다. 한편 MOKE로 측정한 상부 단일 박막의 자화량($M_1$)은 $-H_F$ < H < $H_F$에서 비가역 자화 반전 특성을 보였다. 이러한 자화 거동 특성은 두 자성 박막에 서로 상호 작용하는 반강자성 결합에 의하여 두 자성 박막 각각의 자화 각도 변화에 기인함을 Stoner-Wohlfarth 모델 계산을 통하여 확인하였다.