• Proceedings of the Korean Nuclear Society Conference
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• 1997.05a
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• pp.409-414
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• 1997

Reflood model in RELAP5/MOD3.1 are modified to improve the unrealistic prediction results of the model. In the new method, the modified Zuber pool boiling critical heat flux (CHF) correlation is adopted. The reflood drop size is characterized by the use of We=1.5 and the minimum drop size of 0.0007 m for $p^{*}\;{\leq}\;0.025$. To describe the wall to vapor heat transfer at low pressure and low flow condition, the Webb-Chen correlation is utilized . The suggested method has been verified through the simulations of the Lehigh University rod bundle reflood tests. Through sensitivity study it is shown that the effect of drag coefficients is dominant in the reflood model. It is proved that the present modifications result in much more improved quench behavior and accurate wan and vapor temperature predictions.

• IE interfaces
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• v.15 no.4
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• pp.382-390
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• 2002

This paper deals with planning of order-picking warehouse considering the batch order picking for transportation equipments to pick consumers' orders at a time among order-picking methods and a systematic approach method in order to analyze the order-picking warehouse which can perform optimal operation. To estimate an operating time of transportation equipments to carry out order-picking, this paper suggests three operations : first, to design the refrigerated warehouse using warehouse design parameters, second, to calculate the travel time of transporters considering four types of times with the probabilistic picking frequency, and third, to analyze an order-picking warehouse to construct a simulation model with the AutoMod as a simulation tool. We apply this model to a refrigerated warehouse company in Busan.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.445-452
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• 1987

In this paper, a model for characteristics in the AlxGa1-xAs layer of MODFET's is presented. The characteristics of conduction band in the AlxGa1-xAs layer is analyzed with the Fermi-Dirac statistics. And using the conduction band energy which is calculated with the numerical calculation method (false-Positon method), the variations of the electric-field distribution, the ionized donor concentration, and the two-dimensional electron gas density with gate voltage are calculated, respectively. The channel formation process for the parasitic MESFET operation in the MOD structure is also analyzed, and the characteristics in the AlxGa1-xAs layer is analytically modeled. The throretical results describe well the general characteristics in the MOD structure.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.135-135
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• 2001

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2018.11a
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• pp.468-469
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• 2018

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.186.1-189
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• 2001

Ferroelectric $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (BLT)thin films with various compositions(x=0.65, 0.70, 0.75) were prepared on Pt//Ti/SiO$_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BLT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atomosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (x=0.70) thin film capacitors with a Pt top electrode showed better ferroelectric properties than other films. At the applied voltage of 5V, the dielectric constant($\varepsilon$$_{r}$), dissipation factor(tan$\delta$),remanent polarization(2Pr), and coercive field(2Ec) of the $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (x=0.70)thin films were about 272.54, 0.059, 32.4 $\mu$C/cm$^2$, 2Ec=119.9kV/cm. Also the capacitor did not show any significant fatigue up to 4.8$\times$10$^{10}$ read/write switching cycles.hing cycles.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.861-864
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• 2002

Ferroelectric $Bi_{4-x}Nd_xTi_3O_{12}$(BNdT) thin films with the composition(x=0.75) were prepared on pt/Ti/$SiO_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BNdT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atmosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}Nd_xTi_3O_{12}$(X=0.75) thin film capacitors with a Pt top electrode showed better ferroelectric properties. At the applied voltage of 5V, the dielectric constant$(\varepsilon_r)$, dissipation factor$(tan{\delta})$, remanent polarization(2Pr) and nonvolatile swiching charge of the $Bi_{4-x}Nd_xTi_3O_{12}$(x=0.75)thin films were about 346.7, 0.095, $56{\mu}C/cm^2$ and $38{\mu}C/cm^2$ respectively. Also the capacitor did not show any significant fatigue up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1MHz.

• Proceedings of the Korea Water Resources Association Conference
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• 2008.05a
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• pp.147-153
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• 2008

본 연구에서는 레이더 강우를 이용하여 시공간적 변동성을 고려한 격자형 면적강우량을 산정하기 위하여 추계학적 방법인 칼만필터 기법을 이용하여 지상 강우 관측망과 레이더 강우 관측망을 조합하여 면적강우량을 산정하였다. 또한 전통적인 지상 강우량을 면적강우량으로 전환하는 기법인 Thiessen법, 역거리법, 크리깅 기법을 이용하여 면적강우량을 산정한 후 칼만필터 기법에 의해 보정된 면적 레이더 강우와 비교 하였다. 그 결과, 칼만필터 기법에 의해 보정된 레이더 강우는 실제 강우 분포와 유사한 공간분포를 가지는 원시 레이더 강우 분포를 잘 재현하면서도 강우 체적(볼륨)은 우량계 자료의 체적과 유사하게 나타났다. 그리고 칼만필터 기법에 의해 보정된 레이더 강우를 물리적 기반의 분포형 모형인 $Vflo^{TM}$ 모형과 준분포형 모형인 ModClark 모형에 적용하여 홍수유출을 모의하였다. 그 결과, $Vflo^{TM}$ 모형은 첨두시간과 첨두치가 관측 수문곡선과 유사하게 모의되었으며 ModClark 모형은 총 유출체적에서 좋은 결과를 나타냈다. 그러나 매개변수 검증에서는 $Vflo^{TM}$ 모형이 ModClark 모형보다 관측 수문곡선을 잘 재현하였다. 이를 통해 지상강우와 레이더 강우를 적절하게 조합하여 정확도 높은 면적강우량을 산정하고 분포형 수문모형과 연계하여 홍수유출모의를 실시할 경우 충분한 적용성을 가지고 있음을 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.346-349
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• 2002

Ferroelectric $Bi_{4-x}Nd_{x}Ti_{3}O_{12}(BNdT)$ thin films with the composition(x=0.75) were prepared on $Pt/Ti/SiO_{2}/Si(100)$ substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to $650^{\circ}C$ and then the electrical and structural characteristics of BNdT films were investigated for the application of FRAM. Electrical properties such as dielectirc constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at $650^{\circ}C$ was $56{\mu}C/cm^{2}$ at an applied voltage of 5V. In fatigue characteristics value remained costant up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1Mhz regardless of annealing temperatures.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1247-1248
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• 2006

We fabricated YBCO film using a TFA-MOD method. In order to enhance the reaction kinetics and to control the formation of the second phases, $Y_2Ba_1Cu_1O_x$ and $Ba_3Cu_5O_8$ powders were used as precursors (the so called "211 process"). The films were calcined at $460^{\circ}C$ and then fired at $750^{\circ}C-800^{\circ}C$ in a 12.1% humidified $Ar-O_2$ atmosphere. We found that the microstructure varied significantly with the firing temperature. The textures of all of the films were similar and mainly biaxial. For the film fired at $775^{\circ}C$, the critical current was obtained to be 39 A/cm-width (corresponding critical current density is 2.0 MA/$cm^2$).