• Nuclear Engineering and Technology
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• v.27 no.5
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• pp.701-709
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• 1995

The realistic discharge coefficient for the critical How model of RELAP5/AOD3/KAERI are determined for the subcooled and too-phase critical flow by assessments of nine MARVIKEN Critical flew Test(CFT). The selected test runs include a high initial subcooling and large nozzle aspect rat-io(L/D). The code assessment results show that RELAP5/MOD3/KAERI over-predicts the subcooled critical flow and under-predicts the two-phase critical flow. Using these result, the realistic discharge coefficients of critical flow models are quantified by an iterative method. The realistic discharge coefficients are determined to be 0.89 for the subcooled critical How and 1.07 for the two-phase critical flow, and the associated standard deviations are 0.0349 and 0.1189, respectively. The results obtained from this study can be applied to calculate the realistic system response of Large Break Loss of Coolant Accident and to evaluate the realistic Emergency Core Cooling System performance.

• Progress in Superconductivity and Cryogenics
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• v.6 no.1
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• pp.12-17
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• 2004

High critical current density. $J_c$ over $1MA/cm^2$ at 77 K in a self field was successfully achieved from the YBCO film prepared on (100) $SrTiO_3$ single-crystal substrates by the TFA-MOD process. Unlike a normal TFA-MOD process, we prepared the TFA precursor solution by dissolving YBCO powder into the trifluoroacetic acid. A significant amount of the second phases, including $BaF_2$, was observed in the films fired at $700-725^{\circ}C$ for 2 h under $P(O_2)=10^{-3}$ atm and $P(H_2O)=4.2%$, most probably due to an insufficient reaction time, and hence $T_c$ was greatly degraded. However the films fired at $750-800^{\circ}C$ for 2 h were composed of strongly c-axis oriented YBCO grams without any second phases. and exhibited the $T_c$ values of 89.5 ~ 91 K with a sharp transition. With increasing the firing temperature from 750 to $800^{\circ}C$ average grain size of YBCO was increased and grain connectivity was enhanced. The highest $J_c$ value of $1.1MA/cm^2$ was obtained from the YBCO film fired at $800^{\circ}C$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.1C
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• pp.9-14
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• 2009

In this paper, using the binary (N,M,L,1) low correlation zone(LCZ) sequence set with specific property, we propose the construction method of a quaternary LCZ sequence set with parameters (2N,2M,L,2). The binary LCZ sequence using this method must have period $N{\equiv}3$ mod 4, balance property, and specific correlation property. The proposed method is modified from the construction method of binary LCZ sequence set by using binary LCZ sequence with specific condition proposed by Kim, Jang, No, and Chung[4].

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.2
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• pp.41-47
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• 2016

The times of multiplication for encryption and decryption of cryptosystem is primarily determined by implementation efficiency of the modular exponentiation of $a^b$(mod m). The most frequently used among standard modular exponentiation methods is a standard binary method, of which n-ary($2{\leq}n{\leq}6$) is most popular. The n-ary($1{\leq}n{\leq}6$) is a square-and-multiply method which partitions $b=b_kb_{k-1}{\cdots}b_1b_{0(2)}$ into n fixed bits from right to left and squares n times and multiplies bit values. This paper proposes a variable-length partition algorithm that partitions $b_{k-1}{\cdots}b_1b_{0(2)}$ from left to right. The proposed algorithm has proved to reduce the multiplication frequency of the fixed-length partition n-ary method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.186.1-189
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• 2001

Ferroelectric $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (BLT)thin films with various compositions(x=0.65, 0.70, 0.75) were prepared on Pt//Ti/SiO$_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BLT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atomosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (x=0.70) thin film capacitors with a Pt top electrode showed better ferroelectric properties than other films. At the applied voltage of 5V, the dielectric constant($\varepsilon$$_{r}$), dissipation factor(tan$\delta$),remanent polarization(2Pr), and coercive field(2Ec) of the $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (x=0.70)thin films were about 272.54, 0.059, 32.4 $\mu$C/cm$^2$, 2Ec=119.9kV/cm. Also the capacitor did not show any significant fatigue up to 4.8$\times$10$^{10}$ read/write switching cycles.hing cycles.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.861-864
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• 2002

Ferroelectric $Bi_{4-x}Nd_xTi_3O_{12}$(BNdT) thin films with the composition(x=0.75) were prepared on pt/Ti/$SiO_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BNdT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atmosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}Nd_xTi_3O_{12}$(X=0.75) thin film capacitors with a Pt top electrode showed better ferroelectric properties. At the applied voltage of 5V, the dielectric constant$(\varepsilon_r)$, dissipation factor$(tan{\delta})$, remanent polarization(2Pr) and nonvolatile swiching charge of the $Bi_{4-x}Nd_xTi_3O_{12}$(x=0.75)thin films were about 346.7, 0.095, $56{\mu}C/cm^2$ and $38{\mu}C/cm^2$ respectively. Also the capacitor did not show any significant fatigue up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1MHz.

• Proceedings of the Korea Water Resources Association Conference
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• 2008.05a
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• pp.147-153
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• 2008

본 연구에서는 레이더 강우를 이용하여 시공간적 변동성을 고려한 격자형 면적강우량을 산정하기 위하여 추계학적 방법인 칼만필터 기법을 이용하여 지상 강우 관측망과 레이더 강우 관측망을 조합하여 면적강우량을 산정하였다. 또한 전통적인 지상 강우량을 면적강우량으로 전환하는 기법인 Thiessen법, 역거리법, 크리깅 기법을 이용하여 면적강우량을 산정한 후 칼만필터 기법에 의해 보정된 면적 레이더 강우와 비교 하였다. 그 결과, 칼만필터 기법에 의해 보정된 레이더 강우는 실제 강우 분포와 유사한 공간분포를 가지는 원시 레이더 강우 분포를 잘 재현하면서도 강우 체적(볼륨)은 우량계 자료의 체적과 유사하게 나타났다. 그리고 칼만필터 기법에 의해 보정된 레이더 강우를 물리적 기반의 분포형 모형인 $Vflo^{TM}$ 모형과 준분포형 모형인 ModClark 모형에 적용하여 홍수유출을 모의하였다. 그 결과, $Vflo^{TM}$ 모형은 첨두시간과 첨두치가 관측 수문곡선과 유사하게 모의되었으며 ModClark 모형은 총 유출체적에서 좋은 결과를 나타냈다. 그러나 매개변수 검증에서는 $Vflo^{TM}$ 모형이 ModClark 모형보다 관측 수문곡선을 잘 재현하였다. 이를 통해 지상강우와 레이더 강우를 적절하게 조합하여 정확도 높은 면적강우량을 산정하고 분포형 수문모형과 연계하여 홍수유출모의를 실시할 경우 충분한 적용성을 가지고 있음을 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.346-349
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• 2002

Ferroelectric $Bi_{4-x}Nd_{x}Ti_{3}O_{12}(BNdT)$ thin films with the composition(x=0.75) were prepared on $Pt/Ti/SiO_{2}/Si(100)$ substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to $650^{\circ}C$ and then the electrical and structural characteristics of BNdT films were investigated for the application of FRAM. Electrical properties such as dielectirc constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at $650^{\circ}C$ was $56{\mu}C/cm^{2}$ at an applied voltage of 5V. In fatigue characteristics value remained costant up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1Mhz regardless of annealing temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.599-603
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• 2003

Ferroelectric B $i_4$$_{-x}$N $d_{x}$ $Ti_3$ $O_{12}$ (BNdT) thin films with the composition(x=0.75) were prepared on Pt/Ti/ $SiO_2$(100) substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to $650^{\circ}C$ and then the electrical and structural characteristics of BNdT films were investigated for the application of FRAM. Electrical properties such as dielectric constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at $650^{\circ}C$ was 56$\mu$C/$\textrm{cm}^2$ at an applied voltage of 5V. In fatigue characteristics value remained constant up to 8$\times$10$^{10}$ read/write switching cycles at a frequency of 1Mhz regardless of annealing temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.229-236
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• 1998

Ferroelectric $Sr_xBi_yTa_2O_{9+\alpha}$/(0.7$\leqSr\leq1.0,\; 2.0\leqBi\leq2.6)$ solutions were prepared by MOD (Metalorganic Deposition) process. These solutions were made into thin films with thickness ranging from 1500~2000${\AA}$ by spin coating. The phase transformation of the SBT thin films by variation of annealing temperature and annealing time were observed using high temperature XRD and SEM. The crystallization and grain growth of SBT thin film were accomplished at $800^{\circ}C$ for 30 minutes after deposition of Pt top electrode by sputtering to prevent electrical breakdown. Ferroelectric properties of the SBT thin films were measured in the range of $\pm$3V\; and\; \pm5V$. The specimen with composition ratio of Sr/Bi/Ta (0.8/2.4/2.0) has the excellent ferroelectric properties ; $2P_r = 10.5,\; 13.2\muC/cm^2 \;at\; \pm3V\; and\; \pm5V$ respectively. Observing the post annealed Pt/SBT/Pt interface by SEM, it was found that Pt electrode sputtered on to the SBT thin film penetrated into the hollow on the SBT thin film, thus decreasing the effective insulation thickness. The effective insulation thickness recovered by post annealing, and this was confirmed by leakage current density measurement.