• The Magazine of the IEIE
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• v.29 no.2
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• pp.25-34
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• 2002

무선통신 및 센서 분야의 수요 증가로 관심이 확대되고 있는 밀리파 무선서비스용 MMIC (Monolithic Microwave Integrated Circuit) 기술동향 및 설계에 대하여 기술한다. 밀리파 무선서비스로는 자동차 레이다, HDR(High Data Rate)무선 LAN(Local Area Network), LMDS(Local Multipoint Distribution Service)등이 있다. 이런 서비스에 필요한 MMIC는 저렴하고 고집적율을 가지며 고성능이고, 새롭게 등장하는 서비스로의 설계 변경이 용이하여야 한다. 본 논문에서는 이를 위한 MMIC 동향과 설계기술을 논한다.

• ETRI Journal
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• v.9 no.3
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• pp.127-138
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• 1987

본고에서는 MMIC (Monolithic Microwave Integrated Circuit)의 연구동향을 미국을 중심으로 소개한다. MMIC의 역사, 공정, 소자, 설계, packaging, 측정에 대하여 조사함으로써 차세대 화합물반도체 MMIC개발의 앞으로의 방향을 모색하고자 한다. 본고는 미국 Microwave & RF 논문지 1987년 3월호에 게재된 R. S. Pegally와 D. Maki의 논문내용을 중심으로 편역한 것이다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.796-805
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• 2000

A 30GHz band low noise amplifier module, which has linear gain of 30dB and noise figure of 2.6dB, for 30GHz satellite communication transponder was developed by use of MMIC and thin film MIC technologies. Two kinds of MMIC circuits were used for the low noise amplifier module, the first one is ultra low noise MMIC circuit and the other is wideband and high gain MMIC circuit. The pHEMT technology with 0.15$mu extrm{m}$ of gate length was applied for MMIC fabrication. Thin film microstrip lines on alumina substrate were used to interconnect two MMIC chips, and the thick film bias circuit board were developed to provide the stabilized DC bias. The input interface of the low noise amplifier module was designed with waveguide type to receive the signal from antenna directly, and the output port was adopted with K-type coaxial connector for interface with the frequency converter module behind the low noise amplifier module. Space qualified manufacturing processes were applied to manufacture and assemble the low noise amplifier module, and space qualification level of environment tests including thermal and vibration test were performed for it. The developed low noise amplifier was measured to show 30dB of minimum gain, $\pm$0.3dB of gain flatness, and 2.6dB of maximum noise figure over the desired operating frequency range from 30 to 31 GHz.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.15 no.4
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• pp.143-152
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• 2016

In this paper, a MMIC double balanced mixer that can be applied to the tele-communication band is designed and LO power optimization for the mixer is discussed. The chip of the MMIC double-balanced mixer is fabricated on GaAs substrate with the size of $4{\times}4mm^2$. Optimization study of LO power for the MMIC double-balanced mixer proposed in this paper is conducted for the Input IP3 (IIP3) regarding on the linearity of the input signal. When LO power level of+16 dBm is applied to the mixer, IIP3 is obtained to be approximately 23.2 dBm, which is the most outstanding characteristic.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.13 no.2
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• pp.47-52
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• 2013

A novel architecture to reduce dramatically the coupling length of multimode interference-based couplers (MMICs) is proposed by replacing conventionally designed MMICs by cascaded two-section plasmonic stepped MMICs (PS-MMIC). For the 60% cross power splitting ratio in a stepped-width MMIC, the coupling length of device results in around 42% length reduction. Furthermore, the power splitting ratio and coupling length of plasmonic MMIC just vary around 1~2% along the variation of refractive index. On the contrast, those factors for the variation of MMIC's width strongly vary around 30~40%.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.9B
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• pp.1635-1640
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• 2000

In this paper, a 18 GHz oscillator is designed with the push-push method an fabricated by semi-MMIC process, in which the second harmonic is the main output signal with the suppressed fundamental mode. In semi-MMIC process, passive components with microstrip transmission line are implemented using MMIC process on semi-insulating GaAs substrate. Then, chip types of P-HEMT, resistors, and capacitors are connected through Au wire-bonding. Also, the ground plane is inserted around the circuit and connected each other with the back-side of substrate through Au wire-bonding instead of via-hole. The semi-MMIC push-push oscillator shows the output powder of -10.5 dBm, the fundamental frequency suppression of -17.3 dBc/Hz, and the phase noise of -97.9 dBc/Hz at the offset frequency of 100 kHz.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.6
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• pp.163-168
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• 2018

We developed W-band transceiver module using open MMIC chip such as receiver single chip and transmitting power amplifier. In order to calculate the noise figure and output power value, we analyzed the W-band transition loss from the antenna to MMIC connection and constructed the 12 channel receiver and the 5 channel transmitter. And compared with the results of the measurement. As a result, the output power of the transmitter was similar to the analytical results and the measured results at room temperature and environmental conditions. The noise figure of the receiver was also similar, but some channels showed error of about 3 dB due to manufacturing error.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.989-994
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• 2005

A MMIC(Monolithic Microwave Integrated Circuit) switch chip using InGaAs/GaAs p-HEMT process has been designed for MSM(Microwave Switch Matrix) of satellite communication system. An absorptive type MMIC switch is adopted for good reflection coefficients performances of input and output ports at both on and off states. And, a quarter wavelength impedance transformer is realized with lumped elements of MIM capacitor and spiral inductor for 3 GHz band to reduce the chip size. This MMIC switch covers the frequency range of $3.2\~3.6\;GHz$. According to the on-wafer measurement, the fabricated MMIC switch with miniature size of $1.6\;mm{\times}1.3\;mm$ demonstrates insertion loss below 2 dB and isolation above 56.8 dB, and the performance coincides with simulation results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.258-264
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• 2004

In this paper, MMIC double balanced star mixer for 40 ㎓ was implemented on GaAs substrate with backside vias. In the design of the MMIC mixer, the design of balun and diode was required. A novel balun structure using microstrip to CPS was presented. The 40 ㎓ balun was designed based on the design experience of the scale-down balun by 2 ㎓. The balun may be suitable for fabrication in MMIC process with backside via and can easily be applied for DBM(Double Balanced Mixer). A Schottky diode was designed and implemented using p-HEMT process considering the compatability with other high frequency MMIC's fabricated on p-HEMT base process. Finally, the double balanced star mixer was fabricated using the balun and the p=HEMP Schottky diode. The measured performance of mixer shows 30 ㏈ conversion loss at 18 ㏈m LO power. This insufficient performance is caused by the unwanted diode at AlGaAs junction in vertical structure of p-HEMT. If the p-HEMT's gate is recessed to AlGaAs layer, and so the diode is eliminated, the mixer's performances will be improved.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.1
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• pp.71-76
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• 2001

A Ka Band 3-stage MMIC (Monolithic Microwave Integrated Circuits) LNA (Low Noise Amplifiers) has been designed and fabricated far the Ka band satellite communications and BWLL(Broad Band Wireless Local Loop)system. The MMIC LNA consists of two single-ended type amplification stages and one balanced type amplification stage to satisfy noise figure, high gain and amplitude linearity. The 0.15${\mu}{\textrm}{m}$ pHEMT has been used to provide a ultra low noise figure and high gain amplification. Series and Shunt feedback circuits and λ/4 short lines were inserted to ensure high stability over the frequency range form DC to 80 GHz. The size of the MMIC LNA is 3.1mm$\times$2.4mm(7.44mm$^2$). The on wafer measured performance of the MMIC LNA, which agreed with the designed performance, showed the noise figure of less than 2.0 dB, and the gain of more than 26 dB, over frequency ranges from 22 GHz to 30 GHz.