• Journal of Welding and Joining
• /
• v.17 no.6
• /
• pp.62-69
• /
• 1999

The advantages of Thermal sprayed coatings as a replacement for cast iron liners are reduced weight, better heat transfer and reduced cost. One of the most important performance attributes of a cylinder bore coating is its wear resistance, since it must survive the abrasive sliding of both the piston rings and the piston skirt. In this study, composite powders were prepared by ball milling of Al-13Si-3Mg(wt%) alloy with SiC particles. The concentrations of SiC were 40 and 60wt%. The composite powders were sprayed using Metco-9MB plasma torch. Plasma sprayed coatings were heat-treated at 500℃ for 3 hours. The wear resistances of the plasma sprayed coatings were found to improve with heat treatment and superior to the commercially available G.C.I.(gray cast iron). AlSiMg-40SiC heat-treated coatings showed the best wear resistance in this study.

• International Journal of Precision Engineering and Manufacturing
• /
• v.6 no.3
• /
• pp.56-59
• /
• 2005

Aluminum alloy casting is gaining increased acceptance in automotive and electronic industries and especially, squeeze casting is the most efficient method of mass manufacturing of such parts. In this study, the microstructures and mechanical properties of Al-7.0Si-0.4Mg(AC4C) alloy fabricated by squeeze casting process for development of fuel system parts (fuel rail) are investigated. The microstructure of squeeze cast specimen was composed of eutectic structure aluminum solid solution and $Mg_2Si$ precipitates. The tensile strength of as-solid solution treatment Al-7.0Si-0.4Mg alloy was 298.5MPa. It was found that Al-7.0Si-0.4Mg alloy had good corrosion resistance in electrochemical polarization test.

• Journal of the Korean Vacuum Society
• /
• v.3 no.3
• /
• pp.275-279
• /
• 1994

Low Energy Electron Diffraction(LEED)와 Synchrotron Radiation Photoelectron Spe-ctroscopy (SRPES)를 이용하여 $Si(111)7{\times}7$ 표면위에 Mg의 흡착에 의한 초기계면과 실리사이드의 형성에 대하여 연구하였다. 기판온도를 상온으로 유지하는 경우 증착량의 증가에 따라 LEED pattern은 diffuse 7${\times}$7 diffuse 1${\times}$1, $2/3sqrt{3}{\times}2/3sqrt{3} R30^{\cdot}$ 구조로 변화하였다. $300^{\cdot}C$의 기판온도에서 관측되는 1${\times}$1 구조에 대한 surface sensitive Si 2p core level spectrum의 fitting 결과로부터 이 1${\times}$1구조는 적층성장한 Mg2Si 박막에 의한 구조임을 알수 있다. 그러나 이 1${\times}$1구조를 가진 Mg2Si 박막이 성장하지 못함을 예상할 수 있다. 그결과 Mg의 계속된 증착에도 불구하고 비정질의 Mgqkr막이 성장하였다.

• Journal of the Korean Ceramic Society
• /
• v.20 no.1
• /
• pp.37-42
• /
• 1983

An attempt was made to derive a possible synthetic mechanism of Fluoro-phlogopite (Mica, 4Mg.$Al_2O_3$.$6SiO_2$.$K_2O$.$2MgF_2$) The pevention of fluorine vaporization turned out to be the key in the synthesis of Mica in question.l Consequently the quinary system of Mica was seperately synthesized ; frist 4MgO.$Al_2O_3-6SiO_2$(ternary system) was sintered at 135$0^{\circ}C$ and $K_2O$ and $MgF_2$ were added and second 4MgO.$Al_2O_3-6SiO_2$.$K_2O$ (quarternary system) was heat-treated at 135$0^{\circ}C$ and $MgF_2$ was added. The ternary system resulted in Proto-enstatite Cordierite and Spinel phases while Forsterite and Leucite were shown in the quarternay system . In both methods Fluoro-phlogopite was systhesized but the solid state reactions to form Mica from the ternary system and the quarternary system were different. High temperature reactions in the formation of Mica were investigated employing XRD, DTA and SEM The study of the synthesis of Mica indirectly suggested a method of phase analysis of quinary system(MgO-$Al_2O_3-SiO_2-K_2O-MgF_2$) and quarternary system(MgO-$Al_2O_3-SiO_2-K_2O-MgF_2$) at various temperatures.

• Proceedings of the Korean Society For Composite Materials Conference
• /
• 2000.04a
• /
• pp.139-142
• /
• 2000

The SiCp/AC8A composites were fabricated by the pressureless metal infiltration process successfully. The effect of additional Mg, which were mixed with SiC particles to promote interfacial wetting between the reinforcement and matrix alloy, and particle size on the mechanical properties was investigated. By increasing the additional Mg content the hardness of SiCp/AC8A composites was increased due to the hard reaction products, but the bending strength was decreased by the excess reaction of Mg and high porosity level when the additional Mg content is over 7%. The Hardness and bending strength was increased by decreasing the size of SiC particle.

• Journal of Powder Materials
• /
• v.14 no.6
• /
• pp.354-361
• /
• 2007

The bi-materials with Al-Mg alloy and its composites reinforced with SiC and $Al_2O_3$ particles were prepared by conventional powder metallurgy method. The A1-5 wt%Mg and composite mixtures were compacted under $150{\sim}450\;MPa$, and then the mixtures compacted under 400 MPa were sintered at $773{\sim}1173K$ for 5h. The obtained bi-materials with Al-Mg/SiCp composite showed the higher relative density than those with $Al-Mg/Al_2O_3$ composite after compaction and sintering. Based on the results, the bi-materials compacted under 400 MPa and sintered at 873K for 5h were used for mechanical tests. In the composite side of bi-materials, the SiC particles were densely distributed compared to the $Al_2O_3$ particles. The bi-materials with Al-Mg/SiC composite showed the higher micro-hardness than those with $Al-Mg/Al_2O_3$ composite. The mechanical properties were evaluated by the compressive test. The bi-materials revealed almost the same value of 0.2% proof stress with Al-Mg alloy. Their compressive strength was lower than that of Al-Mg alloy. Moreover, impact absorbed energy of bi-materials was smaller than that of composite. However, the bi-materials with Al-Mg/SiCp composite particularly showed almost similar impact absorbed energy to $Al-Mg/Al_2O_3$ composite. From the observation of microstructure, it was deduced that the bi-materials was preferentially fractured through micro-interface between matrix and composite in the vicinity of macro-interface.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.150-150
• /
• 2000

The adsorption geometry and the electronic property of Mg grown at room temperature on the Si(111)-7$\times$7 surface with various coverages have been studied by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). At low Mg coverage, the Mg atoms preferentially adsorb at the center adatom sites of the faulted half of the Si(111)-7$\times$7 surface. The adsorbed Mg atom acts as nucleophile with respect to Si atoms thus forms a stable ionic bond with the substrate Si atoms. Above 1 Ml, the 7$\times$7 surface starts to be disrupted and an amorphous Mg overlayer is formed. The LEED shows either $\delta$7$\times$7 or 1$\times$1 pattern at this coverage. When more Mg atoms were exposed, a flat and broad {{{{ { 2} over {3 } }}}}{{{{ SQRT { 3} }}}}$\times${{{{ { 2} over {3 } }}}}{{{{ SQRT { 3} }}}}R30$^{\circ}$region evolves. A flat silicide is formed at first and multi-level Mg islands having hexagonal step edges develop with increasing coverage. The scanning tunneling spectroscopy (STS) confirms the electronic properties of these Mg films on the si(111) 7$\times$7 surface at various coverages.

• Corrosion Science and Technology
• /
• v.20 no.4
• /
• pp.196-203
• /
• 2021

To improve corrosion resistance and reduce the hydrogen uptake of 22MnB5, up to 5% Mg was added to the AlSi coating of 22MnB5. After hot-stamping and electrocoating were done on the metallic-coated specimen, the surface characteristics of the steel, hydrogen uptake content, and corrosion resistance were examined by transmittance electron microscopy, thermal desorption spectrometry, cyclic corrosion testing, and electrochemical impedance spectroscopy. Mg was investigated as MgO on the surface layer after hot-stamping while it existed as Mg₂Si before hot-stamping. The total hydrogen content of 22MnB5 was decreased along with the Mg content. However, there was no difference at 0.2 wt% or more. When a small amount of Mg was added, the coating corrosion resistance was decreased, but when it was added at around 1.0 wt%, the greatest corrosion resistance increase was seen. However, when 3 wt% or more was added excessively, the corrosion resistance was decreased. MgO on the surface was considered to suppress H uptake by the AlSi melting solution and increase the barrier effect of the coating.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.233-239
• /
• 1998

SiC thin films were deposited by chemical vapor deposition method using tetramethylsilane (TMS) and hexamethyldisilane (HMDS). The chamber pressure during the deposition was kept at about 1 torr. Precursor was transported to the reaction chamber by $H_2$gas and SiC deposition was carried out at the reaction temperature of $1200^{\circ}C$. Si-wafer masked with tantalum and MgO single crystal covered with platinum and molybdenum were used as substrates. The selectivity of SiC deposition was observed by comparing the microstructure between metal (Ta, Pt, and Mo) surfaces and substrate surfaces (Si and MgO). The deposited films were identified as the $\beta-SiC$ phase by X-ray diffraction pattern. Also, the deposition -behavior of SiC on each surface was investigated by the scanning electron microscope analysis.

• Korean Journal of Materials Research
• /
• v.8 no.12
• /
• pp.1170-1175
• /
• 1998

PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$.