• 전기의세계
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• v.41 no.11
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• pp.8-15
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• 1992

요즘 자기 스스로 움직이면서 간단한 동작을 명령대로 수행하는 마이크로 머신을 만드는 꿈과같은 이야기를 현실에 한발 가까이 하는 연구가 활발히 진행되고 있다. 즉, IC칩을 제작하는 미세반도체 소자 제조공정으로 수십 내지는 수백미크론 크기의 기계구조물이나 모터, 액츄에이터를 실리콘 기판 위에 제작하는 것이 가능하게 되었다. 이러한 연구분야는 1980년대 중반부터 미국, 일본, 유럽등지에서 시작되었다. 이 연구분야를 IEEE에서는 MEMS(Micro Electro Mechanical Systems)라 부르며, 매년 2월 IEEE주최로 이에 관한 International conference가 열리고 있고, 이분야에 대한 Journal도 1992년부터 발행하고 있다. MEMS를 미국에서는 NSF(National Science Foundation)에서 일본에서는 통산성에서 지원하고 있으며 현재 재료, 제작기술, 소자(센서, 액츄에이터), 시스템, 응용, 마이크로 이공학등에 관한 연구가 진행되고 있다. 이 분양의 파급효과는 의공학이나 유전자공학 뿐만이 아니라 공학에도 매우 크리라 예상된다.

• Bulletin of the Korean Space Science Society
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• 2009.10a
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• pp.47.3-47.3
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• 2009

UFFO (Ultra Fast Flash Observatory)는 매우 빠른 가시광/자외선 망원경으로서 MEMS (Micro-Electro-Mechanical Systems) 미세거울을 이용하여 관측대상을 1밀리초 이내에 포착해 낼 수 있다. 이를 이용하여 감마선 폭발의 초기 가시광/자외선을 측정하여, 트리거 이후 1밀리초 이내의 광신호에 대한 연구가 가능할 것이다. 이 발표에서는 UFFO의 개념과 디자인을 소개하고, 시뮬레이션과 망원경 시험제작 및 테스트결과를 발표할 것이다.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.77-81
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• 2020

Silicon wafer etching in micro electro mechanical systems (MEMS) fabrication is challenging to form 3-D structures. Well known Si-wet etch of silicon employs potassium hydroxide (KOH), tetramethylammonium hydroxide (TMAH) and sodium hydroxide (NaOH). However, the existing silicon wet etching process has a fatal disadvantage that etching of the back side of the wafer is hard to avoid. In this study, a wet etching bath for 150 mm wafers was designed to prevent back-side etching of silicon wafer, and we demonstrated the optimized process recipe to have anisotropic wet etching of silicon wafer without any damage on the backside. We also presented the design of wet bath for 300 mm wafer processing as a promising process development.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1414-1415
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• 2006

Air-gap type film bulk acoustic wave resonator device using ZnO for piezoelectric layer and sacrifice layer, deposited by RF magnetron sputter with various conditions, fabricated in this study. Also, membrane$(SiO_2)$ and top and bottom electrode(both Al) of piezoelectric layer deposited by RF magnetron sputter. Using micro electro mechanical systems(MEMS) technique, sacrifice layer removed and then air-gap formed. The results of each process checked by XRD, AFM, SEM to obtain good quality device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.89-92
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• 2010

A bolometer sensor used in an infrared thermal imaging system has many advantages on the process because it does not need a separate cooling system and its manufacturing is easy. However the sensitivity of the bolometer is low and the fixed pattern noise(FPN) is large, because the bolometer sensor is made by micro electro mechanical systems (MEMS). These problems can be fixed-by using the high performance readout integrated circuit(ROIC) with noise reduction techniques. In this paper, we propose differential delta sampling circuit to remove the mismatch noise of ROIC itself, the FPN of the bolometer. And for reduction of FPN noise, the reference signal compensation circuit which compensate the reference signal by using on-resistance of MOS transistor was proposed.

• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.950-956
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• 2014

Special purpose sensor design using MEMS (Micro-Electro-Mechanical Systems) technique is commonly used in Nondestructive Testing (NDT) research for the evaluation of existing structures and for the safety control and requirements. Various sensors and network have been developed for general infrastructures as well as safety-critical applications, e.g., aerospace, defense, and nuclear system, etc. In this paper, one of sensor technique using Fiber Bragg Gratings (FBG) and Finite Element Method (FEM) evaluation is discussed. The experimental setup and data collection technique is also demonstrated. The factors influencing test result and the advantages/limitations of this technique are also reviewed using various methods.

• Transactions of the Korean Society of Automotive Engineers
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• v.16 no.2
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• pp.58-65
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• 2008

The finite element programs have been developed for structure, collision, flow, dynamics, heat transfer, acoustics, electromagnetism, MEMS (Micro Electro Mechanical Systems), and etc. These programs can be classified as either "package" program or "single purpose" program. Single purpose programs usually have convenient and powerful functions, but these programs have limited expandability to different fields of analysis. Therefore, the method to converter the analysis results of single purpose program to other programs is needed. In the research, multi-body data conversion methods of 1) finite element model and 2) solid model were created to convert fluid analysis result of CFD-ACE+ to ANSYS data structure. Automatic boundary condition algorithms were developed for blade, and finite element model was compared with solid model. It is expected that, by sealess data transfer, the Multi-body Data Conversion Program could reduce the development period of torque converters.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.211-214
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• 2002

Properties of 52/48 PZT films with various thicknesses for piezoelectric micro-electro mechanical systems (MEMS) devices fabricated by multi-coating method on $Pt(3500{\AA})/Ti(400{\AA})/SiO_2(3000{\AA})/Si$(525$\mu\textrm{m}$) substrates were investigated. PZT films were deposited by spin-coating process at 3500 rpm for 30 sec, followed by pyrolysis at 45$0^{\circ}C$ for 10 min producing the thickness of about 120nm. These processes were repeated 4, 8, 12, 16 and 20 times in order to have various thicknesses, respectively. Finally, they were crystallized at $650^{\circ}C$ for 30 min. All thick PZT films showed dense and homogeneous surface microstructures. Thick PZT films showed crystalline structures of random orientations with increasing thickness. Dielectric constants of thick PZT films were increased with increasing film thickness and reached 800 at 100kHz for 2.3$\mu\textrm{m}$ thick PZT film. $P_r\; and\; E_c$ of 2.3$\mu\textrm{m}$ thick PZT films were about 20$\mu$C/$\textrm{cm}^2$ and 63kV/cm. Depth profile analysis by Auger Electron Spectroscopy (AES) of 4800 $\AA$ thick PZT film showed the formation of the perovskite phase on Pt layer by Pb diffusion behavior. It was considered that Pb-Pt intermediate layer promoted PZT (111) columnar structures.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.10
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• pp.1307-1313
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• 2018

In recent years, there have been frequent occurrences of collapsing buildings and tilting accidents due to frequent earthquakes and aging of buildings. Various methods have been proposed to prevent disasters on these buildings. In this paper, we propose a system that provides an indication of anomalous phenomena such as collapse and tilting of buildings by real-time monitoring of IoT(Internet of Things) based architectural anomalies. The MEMS sensor is based on the inclinometer sensor and the accelerometer sensor, transmits the detected data to the server in real time, accumulates the data, and provides the service to cope when the set threshold value is different. It is possible to evacuate and repair the collapse and tilting of the building by warning the occurrence of the upper threshold event such as the collapse and tilting of the building.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.11
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• pp.1-5
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• 2010

We developed a novel micro-electro mechanical systems (MEMS) test socket using silicon on insulator (SOI) substrate with the cantilever array structure. We designed the round shaped cantilevers with the maximum length of $350{\mu}m$, the maximum width of $200{\mu}m$ and the thickness of $10{\mu}m$ for $650{\mu}m$ pitch for 8 mm x 8 mm area and 121 balls square ball grid array (BGA) packages. The MEMS test socket was fabricated by MEMS technology using metal lift off process and deep reactive ion etching (DRIE) silicon etcher and so on. The MEMS test socket has a simple structure, low production cost, fine pitch, high pin count and rapid prototyping. We verified the performances of the MEMS test sockets such as deflection as a function of the applied force, path resistance between the cantilever and the metal pad and the contact resistance. Fabricated cantilever has 1.3 gf (gram force) at $90{\mu}m$ deflection. Total path resistance was less than $17{\Omega}$. The contact resistance was approximately from 0.7 to $0.75{\Omega}$ for all cantilevers. Therefore the test socket is suitable for BGA integrated circuit (IC) packages tests.