• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.9
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• pp.72-80
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• 2019

In this task, the tool dynamometer design and manufacture, and the Ansys S/W structural analysis program for tool attachment that satisfies the cutting force measurement requirements of the tool dynamometer system are used to determine the cutting force generated by metal cutting using 3-axis static structural analysis and the LabVIEW system. The cutting power in a cutting process using a milling tool for processing metals provides useful information for understanding the processing, optimization, tool status monitoring, and tool design. Thus, various methods of measuring cutting power have been proposed. The device consists of a strain-gauge-based sensor fitted to a new design force sensing element, which is then placed in a force reduction. The force-sensing element is designed as a symmetrical cross beam with four arms of a rectangular parallel line. Furthermore, data duplication is eliminated by the appropriate setting the strain gauge attachment position and the construction of a suitable Wheatstone full-bridge circuit. This device is intended for use with rotating spindles such as milling tools. Verification and machining tests were performed to determine the static and dynamic characteristics of the tool dynamometer. The verification tests were performed by analyzing the difference between strain data measured by weight and that derived by theoretical calculations. Processing test was performed by attaching a tool dynamometer to the MCT to analyze data generated by the measuring equipment during machining. To maintain high productivity and precision, the system monitors and suppresses process disturbances such as chatter vibration, imbalances, overload, collision, forced vibration due to tool failure, and excessive tool wear; additionally, a tool dynamometer with a high signal-to-noise ratio is provided.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.11
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• pp.67-73
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• 2021

Tanks are key weapons of ground combat that are equipped with powerful weapons and have strong protective bodies. One tank component, the engine clutch flange, is located in the part of the tank where the engine and transmission are installed, and it is a key part of the power transfer and shutoff. The engine clutch flange transmits high power to secure the mobility of the tank; thus, it must have high strength and hardness. In addition, high durability and safety must be ensured because tank operations must exclude concerns about damage. In this study, an engine clutch female flange for tanks made of SNCM439 was developed. The 2D design used AutoCAD programs, and the 3D shape design used CATIA programs. The structural analysis was conducted using ANSYS. The mesh grid has a tetrahedron shape and is created by adding a mid-side node. After the mechanical properties and constraints of SNCM439 were entered, the changes in the safety factor, total deformation, and Von-Mises stress were identified according to the increase in torque. Prototype processing was performed to verify the engine clutch female flange for the tank. To determine the productivity of the product, the cutting processing time was measured when processing the prototypes. Based on the results of measuring the cutting processing time, it is concluded that research is needed to improve productivity because MCT slot cutting processing is time consuming.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.26 no.5B
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• pp.519-528
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• 2006

In the construction of hydraulic structures deciding a design flood is one of the most important works. It should be especially noted that the time distribution of the design rainfall method makes a significant effect on the results of the design flood. Thus, choosing an appropriate time distribution method for the design rainfall is a very important process. In recent years, Huff's method is usually used in Korea. This method presents dimensionless rainfall-time cumulative curves, which are made through the analyses of storm data. In this study, the annual maximum rainfall data, from 1961 to 2004 were analyzed to make the dimensionless rainfall-time cumulative curves and hyetographs in Seoul. The results were compared with the "Regional Time Distribution of the Design Rainfall", (KICT, 1989 and MCT, 2000). As a result, the dimensionless rainfall-time cumulative curves are smoother than Huff's results when the duration of an annual maximum rainfall is short. In addition, the curves are similar with the Huff's results as the duration is longer.

• Restorative Dentistry and Endodontics
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• v.36 no.3
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• pp.231-237
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• 2011

Objectives: The purpose of this study was to determine the optimal master apical file size with minimal transportation and optimal efficiency in removing infected dentin. We evaluated the transportation of the canal center and the change in untouched areas after sequential preparation with a #25 to #40 file using 3 different instruments: stainless steel K-type (SS K-file) hand file, ProFile and LightSpeed using microcomputed tomography (MCT). Materials and Methods: Thirty extracted human mandibular molars with separated orifices and apical foramens on mesial canals were used. Teeth were randomly divided into three groups: SS K-file, Profile, LightSpeed and the root canals were instrumented using corresponding instruments from #20 to #40. All teeth were scanned with MCT before and after instrumentation. Cross section images were used to evaluate canal transportation and untouched area at 1-, 2-, 3-, and 5- mm level from the apex. Data were statistically analyzed according to 'repeated nested design' and Mann-Whitney test (p = 0.05). Results: In SS K-file group, canal transportation was significantly increased over #30 instrument. In the ProFile group, canal transportation was significantly increased after preparation with the #40 instrument at the 1- and 2- mm levels. LightSpeed group showed better centering ability than ProFile group after preparation with the #40 instrument at the 1 and 2 mm levels. Conclusions: SS K-file, Profile, and LightSpeed showed differences in the degree of apical transportation depending on the size of the master apical file.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.170.1-170.1
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• 2015

안티모니 (Sb)를 기반으로 한 제2형 초격자 (Type II superlattice, T2SL)구조 적외선 검출기 연구는 2000년대 들어 Sb 계열의 화합물 반도체 성장 기술이 발전함에 따라 HgCdTe (MCT), InSb, 양자우물 적외선 검출기 (QWIP)를 대체할 수 있는 고성능의 양자형 적외선 검출 소재로 부상하였으며, 현재 전 세계적으로 활발한 연구가 진행되고 있다. 특히, 기존의 양자형 적외선 검출소자에 비해 전자의 유효질량이 상대적으로 커서 밴드 간의 투과전류가 줄어들 뿐만 아니라, 전자와 정공이 서로 다른 물질 영역에 분포하여 Auger 재결합률을 효과적으로 줄일 수 있어 상온 동작이 가능한 소재로 주목을 받고 있다. 또한, T2SL 구조는 초격자를 구성하는 물질의 두께나 조성 변화를 통한 밴드갭 변조가 용이하여 단파장에서 장파장 적외선에 이르는 광범위한 파장 대역에서 동작이 가능할 뿐만 아니라 구조적 변화를 통해 이중 대역을 동시에 검출 할 수 있는 차세대 적외선 열영상 소자로 알려져 있다. 본 연구에서는 분자선 에피택시(MBE)법을 이용하여 300 주기의 InAs/GaSb (10/10 ML) 제2형 초격자 구조를 성장하여 적외선 검출소자를 제작하였다. 제2형 초격자 구조를 구성하는 물질계에 p-type dopant인 Be을 이용하여 각각 도핑 농도가 다른 시료를 성장하였다. 이때 p-type 도핑 농도는 각각 $1/5/10{\times}10^{15}cm^{-3}$로 변화를 주었다. 성장된 시료의 구조적 특성 분석을 위해 고분해능 X선 회절 (High resolution X-ray diffraction, HRXRD)법을 이용하였으며, 초격자 한 주기의 두께가 6.2~6.4 nm 로 설계된 구조와 동일하게 성장됨을 확인 하였으며, 1차 위성피크의 반치폭은 30~80 arcsec로 우수한 결정성을 가짐을 확인하였다. 적외선 검출을 위한 $410{\times}410{\mu}m^2$ 크기의 단위 소자 공정을 진행하였으며 이때 적외선의 전면 입사를 위해 소자 위에 $300{\mu}m$의 윈도우 창을 제작하였다. 단위 소자의 측벽에는 표면 누설 전류가 흐르는데 이를 방지하기 위해서 표면보호막을 증착하였다. 적외선 검출 소자의 전기적 특성 평가를 위해 각각의 시료의 암전류 (dark current)와 파장별 반응 (spectral response)을 온도별로 측정하여 비교 및 분석하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.24.2-24.2
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• 2009

Indium Antimonide(InSb)는 $3{\sim}5\;{\mu}m$대 적외선 감지영역에서 기존 HgCdTe(MCT)를 대체할 물질로 각광받고 있다. 1970년대부터군사적 용도로 미국, 이스라엘 등 일부 선진국에서 연구되기 시작했으며,이온주입, MOCVD, MBE 등 다양한 공정을 통해 제작되어 왔다. InSb 적외선 감지소자는 $3{\sim}5{\mu}m$대에서 HgCdTe와 성능은 대등한데 반해, 기판의 대면적화와 저렴한 가격, 우주공간 및 야전에서 소자 동작의안정성 등으로 InSb적외선 감지기는 냉각형 고성능 적외선 감지영역에서 HgCdTe를 대체해 가고 있다. 하지만 InSb는 77 K에서 0.225eV의 작은 밴드갭을 갖고 있기 때문에 누설전류로 인한 성능저하가 고질적인문제로 대두되었고, 이를 해결하기 위한 고품질 절연막 연구가 InSb적외선 수광 소자 연구의 주요이슈 중 하나가 되어왔다. 그 동안 PECVD, photo-CVD, anodic oxidation 등의 공정을 이용하여 $SiO_2$, $Si_3N_4$, 양극산화막(anodic oxide) 등 다양한 절연막에 대한 연구가 진행되었고[1,2], 절연막과 반도체 사이 계면에서의 열확산을 억제하여 계면트랩밀도를 최소화하기 위한 공정개발이 이루어졌다[3]. 하지만 InSb 적외선 감지기술은 국방 및 우주개발의 핵심기술중 하나로 그 기술의 이전이 엄격히 통제되고 있으며, 현재도 미국과 이스라엘, 일본, 영국 등 일부 선진국 만이 기술을 확보하고 있고, 국내의 경우 연구가 매우 취약한 실정이다. 따라서 본 연구에서는 InSb 적외선 감지기의 암전류를 제어하기 위한 낮은 계면트랩밀도를 갖는 절연막 증착 공정을 찾고자 하였다. 본 연구에서는 n형 (100) InSb 기판 ($n=0.2{\sim}0.85{\times}10^{15}cm^{-3}$ @ 77K)에 PECVD를 이용하여 $SiO_2$, $Si_3N_4$ 등을 증착하고 절연막으로서 이들의 특성을 비교 분석하였다. $SiO_2$는 160, 200, $240^{\circ}C$에서 $Si_3N_4$는 200, $300^{\circ}C$에서 증착하였다. Atomic Force Microscopy(AFM) 사진으로 확인한 결과, 모든 샘플에서표면거칠기가 ~2 nm의 평탄한 박막을 얻을 수 있었다. Capacitance-Voltage 측정(77K)을 통해 절연막 특성을 평가하였다. $SiO_2$와 $Si_3N_4$ 모두에서 온도가 증가할수록 벌크트랩밀도가 감소하는 경향을 볼 수 있었는데, 이는 고온에서 증착할 수록 박막 내의 결함이 감소했음을 의미한다. 반면계면트랩밀도는 온도가 증가함에 따라, 1011 eV-1cm-2 대에서 $10^{12}eV^{-1}cm^{-2}$ 대로 증가하였는데, 이는 고온에서 증착할 수 록 InSb 표면에서의 결함은 증가하였음을의미한다. 암전류에 큰 영향을 주는 것은 계면트랩밀도 이므로, $SiO_2$와 $Si_3N_4$ 모두 $200^{\circ}C$이하의 저온에서 증착시켜야 함을 확인할 수 있었다.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.34 no.5
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• pp.532-536
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• 2008

Purpose: This study was designed to evaluate effect of EMD on proliferation of HPDLCs and MC3T3-E1 cells in high glucose condition in vitro. Material and method: The Human PDL fibroblasts(HPDLCs) were obtained through typical way and the cells used in this experiment were divided in 4 groups. $1{\times}10^4/ml$ HPDLCs suspension was cultured in typical DMEM and assigned to group 1. The cells cultured in DMEM which included 400mg/dl glucose are allocated to group 3. Group 2 and 4 are established by adding EMD to group 1 and 3 respectively. These control and experimental groups had been cultured for 24 and 48 hours, and MTT assay was conducted. The differences of each group in cellular proliferation was evaluated. The same experiment was conducted for preosteoblast (MC3T3-E1) with adding $25\;{\mu}g/ml$ EMD. Results: EMD had the same effect on both PDL cells and MCT3T3-E1 cells. The experimental group had more meaningful differences and active cellular proliferation than the control group did. The EMD accelerated cellular proliferation not only in normal glucose condition but also in high glucose condition. The same results were observed via MTT assay; EMD-added experimental group had more meaningful differences and showed higher cellular activity than control group did. Each experimental and control group was inspected for statistical significance through Kruskal-Wallis Test. Statistical significances were observed among these groups. (SPSS 12.0 Chicago, IL, USA, p=0.008, p=0.011) Conclusion: EMD is considered to accelerate proliferation of PDL cells and MC3T3-E1 cells in high glucose condition as well as normal glucose condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.176-177
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• 2013

Surface plasmon polaritons (SPPs) have attracted the attention of scientists and engineers involved in a wide area of research, microscopy, diagnostics and sensing. SPPs are waves that propagate along the surface of a conductor, usually metals. These are essentially light waves that are trapped on the surface because of their interaction with the free electrons of conductor. In this interaction, the free electrons respond collectively by oscillating in resonance with the light wave. The resonant interaction between the surface charge oscillation and the electromagnetic field of the light constitutes the SPPs and gives rise to its unique properties. In this papers, we studied theoretical and experimental extraordinary transmittance (T) and reflectance (R) of 2 dimensional metal hole array (2D-MHA) on GaAs in consideration of the diffraction orders. The 2d-MHAs was fabricated using ultra-violet photolithography, electron-beam evaporation and standard lift-off process with pitches ranging from 1.8 to $3.2{\mu}m$ and diameter of half of pitch, and was deposited 5-nm thick layer of titanium (Ti) as an adhesion layer and 50-nm thick layer of gold (Au) on the semiinsulating GaAs substrate. We employed both the commercial software (CST Microwave Studio: Computer Simulation Technology GmbH, Darmstadt, Germany) based on a finite integration technique (FIT) and a rigorous coupled wave analysis (RCWA) to calculate transmittance and reflectance. The transmittance was measured at a normal incident, and the reflectance was measured at variable incident angle of range between $30^{\circ}{\sim}80^{\circ}$ with a Nicolet Fourier transmission infrared (FTIR) spectrometer with a KBr beam splitter and a MCT detector. For MHAs of pitch (P), the peaks ${\lambda}$ max in the normal incidence transmittance spectra can be indentified approximately from SP dispersion relation, that is frequency-dependent SP wave vector (ksp). Shown in Fig. 1 is the transmission of P=2.2 um sample at normal incidence. We attribute the observation to be a result of FTIR system may be able to collect the transmitted light with higher diffraction order than 0th order. This is confirmed by calculations: for the MHAs, diffraction efficiency in (0, 0) diffracted orders is lower than in the (${\pm}x$, ${\pm}y$) diffracted orders. To further investigate the result, we calculated the angular dependent transmission of P=2.2 um sample (Fig. 2). The incident angle varies from 30o to 70o with a 10o increment. We also found the splitting character on reflectance measurement. The splitting effect is considered a results of SPPs assisted diffraction process by oblique incidence.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.5
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• pp.213-217
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• 2013

The GaN layer was typical III-V nitride semiconductor and was grown on the sapphire substrate which cheap and convenient. However, sapphire substrate is non-conductivity, low thermal conductivity and has large lattice mismatch with the GaN layer. In this paper, the poly GaN epilayer was grown by HVPE on the metallic compound graphite substrate with good heat dissipation, high thermal and electrical conductivity. We tried to observe the growth mechanism of the GaN epilayer grown on the amorphous metallic compound graphite substrate. The HCl and $NH_3$ gas were flowed to grow the GaN epilayer. The temperature of source zone and growth zone in the HVPE system was set at $850^{\circ}C$ and $1090^{\circ}C$, respectively. The GaN epilayer grown on the metallic compound graphite substrate was observed by SEM, EDS, XRD measurement.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.62-67
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• 2015

The carbon microspheres of a core-shell type were grown by the method of mixed-source hydride vapor phase epitaxy (HVPE). The surface and the cross section of the carbon microsphere grown by a new method were observed by scanning electron microscope (SEM). The characteristics of the carbon microsphere were investigated by X-ray photoelectron spectroscopy (XPS) and a high resolution-transmission electron microscope (HR-TEM). From these measurements, the diameters of carbon sphere were about few hundred micrometers. Furthermore, we show that the carbon microsphere of the core-shell type by mixed-source HVPE method can be grown successfully with the larger size than those of the existing one. This mixed-source HVPE method is proposed a new method for making of carbon microsphere.