• 제목/요약/키워드: M2 polarization

검색결과 641건 처리시간 0.027초

PSN-PNN-PZT 세라믹스의 유전 및 압전 특성 (Dielectric and Piezoelectric Properties in PSN-PNN-PZT Ceramics)

  • 윤광희;류주현;박창엽;정회승;서성재;신광호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.255-258
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    • 2000
  • In this study, the structural, dielectric and piezoelectric properties of Pb[(Sb$\sub$1/2/Nb$\sub$1/2/)$\sub$x/- (Ni$\sub$1/3/Nb$\sub$2/3/)$\sub$0.15-x/- (Zr,Ti)$\sub$0.85/]O$_3$(x = 0, 0.01, 0.02, 0.03, 0.04, 0.05) ceramics is investigated as a function of Pb(Sb$\sub$1/2/Nb$\sub$1/2/)O$_3$ (abbreviated PSN) substitution. With the increase of PSN substitution, the crystal structure is transO$_3$formed from the tetragonal phase to the rhombohedral phase and the grain size is decreased abruptly. The curie temperature is decreased with the PSN substitution. The dielectric constant is increased with the PSN substitution and maximum value of 2290 is obtained at 4mol% PSN. With the PSN substitution, the coercive field is increased and the remnant polarization is decreased. The Electromechanical coupling factor(k$\sub$p/) Is showed the highest value of 0.622 at lmol% PSN and the mechanical quality factor(Q$\sub$m/) is decreased abruptly with the PSN substitution.

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중전기기용 Epoxy/SiO2 나노복합재료의 유전분산 연구 (Study on Dielectric Dispersion of Epoxy/SiO2 Nanocomposites using High Voltage Generator)

  • 안준호;박재준
    • 한국전기전자재료학회논문지
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    • 제20권4호
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    • pp.348-351
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    • 2007
  • Recently, Nanotechnology becomes a major issue in most part of industries. Nanotechnology is expected to develop various application products due to nano material mired composites is improved physical and electrical properties compared to conventional composites materials. Dielectric and insulation materials need to develop and improve like other field about nanotechnology. In this paper, we reported dielectric dispersion by size(no filler, $1.2{\mu}m$, 500 nm, 10 nm), frequencies(60, 120, 1 kHz), and temperatures($30{\sim}170^{\circ}C$). Dielectric constant of composites materials with filler shows higher than composites materials without filler and increased depending on rising temperatures in low frequency region. It was the effect that nano-filler and impurities in composites contributed to electrical conductivity. And dielectric properties depending on temperatures shows to change in low frequency region dramatically We analyzed interfacial polarization in low frequency region($10^{-2}$ Hz) and oriented polarization in high frequency region($10^{-5{\sim}6}$ Hz) on composites materials.

용융탄산염 연료전지의 양극 및 대체재료의 제작에 관한 연구-Ni-Co양극에 관하여- (A Study on the Development of Anode Material for Molten Carbonate Fuel Cell -Ni-Co anode-)

  • 황상문;김선진;강성군
    • 한국표면공학회지
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    • 제27권3호
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    • pp.166-175
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    • 1994
  • The effect of Co addition on the electrochemical performance and structural stability of porous Ni anode for molten carbonate fuel cell(MCFC) was evaluated by the anodic polarization and the sintering test in the simulated MCFC anode condition ($650^{\circ}C$, 80% $H_2$+20%$CO_2$). The anode current density ranged from 110mA/$cm^2$ to 144mA/$cm^2$ was obtained at +100mV overpotential by additions of Co up to 10 wt.%. The sintering resistance of Ni-Co anodes was higher than that of the pure Ni anode. The increase of sintering resistance seemed to be to the lower diffusion coefficient of Co than that of Ni.

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LiINbO3 기판의 분극반전을 이용한 5.5 GHz 대역 SSB 광변조기의 설계 및 제작 (Design and Fabrication of 5.5GHZ SSB optical modulator with polarization reversed structure)

  • 정우진;김우경;양우석;이형만;이한영;권순우
    • 한국광학회지
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    • 제17권2호
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    • pp.175-180
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    • 2006
  • 리튬나이오베이트 기판의 분극 반전 기술을 이용하여 5.5 GHz대역의 SSB(Single Sideband) 광변조기를 설계 및 제작하였다. 분극 반전을 통해 광이 인가받는 유효전계가 마흐젠더 두 도파로에서 $90^{\circ}$ 위상차를 갖도록 할 수 있었다. 제작된 광변조기는 5.8 GHz의 중심주파수로, 1.9 V DC 인가 시 약 33 dB의 USB 억제율을, -10.6 V 인가 시 약 25 dB의 LSB 억제율을 나타내었다. 또한 2.5 GHz의 대역폭에서 15 dB 이하의 Sideband 억제율을 보이고 있다.

Estimation of Sea Surface Wind Speed and Direction From RADARSAT Data

  • Kim, Duk-Jin;Wooil-M. Moon
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 1999년도 Proceedings of International Symposium on Remote Sensing
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    • pp.485-490
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    • 1999
  • Wind vector information over the ocean is currently obtained using multiple beam scatterometer data. The scatterometers on ERS-1/2 generate wind vector information with a spatial resolution of 50km and accuracies of $\pm$2m/s in wind speed and $\pm$20$^{\circ}$ in wind direction. Synthetic aperture radar (SAR) data over the ocean have the potential of providing wind vector information independent of weather conditions with finer resolution. Finer resolution wind vector information can often be useful particularly in coastal regions where the scatterometer wind information is often corrupted because of the lower resolution system characteristics which is often contaminated by the signal returns from the coastal areas or ice in the case of arctic environments. In this paper we tested CMOD_4 and CMOD_IFR2 algorithms for extracting the wind vector from SAR data. These algorithms require precise estimation of normalized radar cross-section and wind direction from the SAR data and the local incidence angle. The CMOD series algorithms were developed for the C-band, VV-Polarized SAR data, typically for the ERS SAR data. Since RADARSAT operates at the same C-band but with HH-Polarization, the CMOD series algorithms should not be used directly. As a preliminary approach of resolving with this problem, we applied the polarization ratio between the HH and VV polarizations in the wind vectors estimation. Two test areas, one in front of Inchon and several sites around Jeju island were selected and investigated for wind vector estimation. The new results were compared with the wind vectors obtained from CMOD algorithms. The wind vector results agree well with the observed wind speed data. However the estimation of wind direction agree with the observed wind direction only when the wind speed is greater than approximately 3.0m/s.

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Corrosion Behavior of Ti-6Al-4V Alloy after Plasma Electrolytic Oxidation in Solutions Containing Ca, P and Zn

  • Hwang, In-Jo;Choe, Han-Cheol
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2016년도 추계학술대회 논문집
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    • pp.120-120
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    • 2016
  • Ti-6Al-4V alloy have been used for dental implant because of its excellent biocompatibility, corrosion resistance, and mechanical properties. However, the integration of such implant in bone was not in good condition to achieve improved osseointergraiton. For solving this problem, calcium phosphate (CaP) has been applied as coating materials on Ti alloy implants for hard tissue applications because its chemical similarity to the inorganic component of human bone, capability of conducting bone formation and strong affinity to the surrounding bone tissue. Various metallic elements, such as strontium (Sr), magnesium (Mg), zinc (Zn), sodium (Na), silicon (Si), silver (Ag), and yttrium (Y) are known to play an important role in the bone formation and also affect bone mineral characteristics, such as crystallinity, degradation behavior, and mechanical properties. Especially, Zn is essential for the growth of the human and Zn coating has a major impact on the improvement of corrosion resistance. Plasma electrolytic oxidation (PEO) is a promising technology to produce porous and firmly adherent inorganic Zn containing $TiO_2(Zn-TiO_2)$coatings on Ti surface, and the a mount of Zn introduced in to the coatings can be optimized by altering the electrolyte composition. In this study, corrosion behavior of Ti-6Al-4V alloy after plasma electrolytic oxidation in solutions containing Ca, P and Zn were studied by scanning electron microscopy (SEM), AC impedance, and potentiodynamic polarization test. A series of $Zn-TiO_2$ coatings are produced on Ti dental implant using PEO, with the substitution degree, respectively, at 0, 5, 10 and 20%. The potentiodynamic polarization and AC impedance tests for corrosion behaviors were carried out in 0.9% NaCl solution at similar body temperature using a potentiostat with a scan rate of 1.67mV/s and potential range from -1500mV to +2000mV. Also, AC impedance was performed at frequencies ranging from 10MHz to 100kHz for corrosion resistance.

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Impedance Spectroscopy Studies on Corrosion Inhibition Behavior of Synthesized N,N’-bis(2,4-dihydroxyhydroxybenzaldehyde)-1,3-Propandiimine for API-5L-X65 Steel in HCl Solution

  • Danaee, I.;Bahramipanah, N.;Moradi, S.;Nikmanesh, S.
    • Journal of Electrochemical Science and Technology
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    • 제7권2호
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    • pp.153-160
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    • 2016
  • The inhibition ability of N,N-bis(2,4-dihydroxyhydroxybenzaldehyde)-1,3-Propandiimine (DHBP) as a schiff base against the corrosion of API-5L-X65 steel in 1 M HCl solution was evaluated by electrochemical impedance spectroscopy, potentiodynamic polarization and scanning electron microscopy. Electrochemical impedance studies indicated that DHBP inhibited corrosion by blocking the active corrosion sites. The inhibition efficiency increased with increasing inhibitor concentrations. EIS data was analysed to equivalent circuit model and showed that the charge transfer resistance of steel increased with increasing inhibitor concentration whilst the double layer capacitance decreased. The adsorption of this compound obeyed the Langmuir adsorption isotherm. Gibbs free energy of adsorption was calculated and indicated that adsorption occurred through physical and spontaneous process. The corrosion inhibition mechanism was studied by potential of zero charge. Polarization studies indicated that DHBP retards both the cathodic and anodic reactions through adsorption on steel surface. Scanning electron microscopy was used to study the steel surface with and without inhibitor.

Sol-Gel법으로 제작한 PZT(20/80)/PZT(80/20) 이종층 박막의 구조 및 유전 특성 (Structural and Dielectric Properties of PZT(20/80)/PZT(80/20) Heterolayered Thin Films Prepared by Sol-Gel Method)

  • 심광택;이영희
    • E2M - 전기 전자와 첨단 소재
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    • 제10권10호
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    • pp.983-988
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    • 1997
  • We investigated the structural and dielectric properties of PZT(20/80)/PZT(80/20) heterolayered thin films that fabricated by the alkoxide-based Sol-Gel method. PZT(20/80)/PZT(80/20) heterolayered thin films were spin-coated on the Pt/Ti/SiO$_2$/Si substrate with PZT(20/80) film of tetragonal structure and PZT(80/20) film of rhombohedral structure by turns. Each layers were dried to remove the organic materials at 30$0^{\circ}C$ for 30min and sintered at $650^{\circ}C$ for 1hr. This procedure was repeated several times to form PZT(20/80)/PZT(80/20) heterolayered films and thickness of the film obtained by one-times of drying/sintering process was approximately 80-90nm. PZt-1, 3, 5 films with top layer of PZT(20/80) film of tetragonal structure showed fine grain structure and PZT-2, 4, 6 films with top layer of PZT(80/20) film of rhombohedral structure showed the dense grain microstructure without rosette-type. Dielectric constant and dielectric loss of the PZT-6 film were approximaterly 1385 and 3.3% respectively. Increasing the number of coatings remanent polarization was increased and coercive field was decreased and the values of the PZT-6 film were 8.13$\mu$C/cm$^2$and 12.5kV/cm respectively.

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HRTEM을 이용한 비극성 GaN의 구조적 특성 분석 (Structural characterization of nonpolar GaN using high-resolution transmission electron microscopy)

  • 공보현;김동찬;김영이;안철현;한원석;최미경;배영숙;우창호;조형균;문진영;이호성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.23-23
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    • 2009
  • GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

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뫼스바우어 분광법을 이용한 LuFe2O4의 자발분극과 철 이온의 거동과의 상관관계에 대한 연구 (The Research about the Correlation Between the Spontaneous Polarization of LuFe2O4 and Behavior of Iron by Mössbauer)

  • 방봉규;김철성;김성백
    • 한국자기학회지
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    • 제17권1호
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    • pp.10-13
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    • 2007
  • [ $LuFe_2O_4$ ] 단결정 시료를 floating zone법을 이용하여 합성, 결정학적 및 자기구조를 연구하였다. 결정 구조는 $R\={3}mh$의 능면체로 결정되었고, 격자 상수는 각각 $a_0=3.440(2)\;{\AA},\;c_0=25.263(2)\;{\AA}$이었다. 진동 시료 자화율 측정기(VSM) 실험결과와 $M\"{o}ssbauer$ 분석 실험결과 자기적 $N\'{e}el$ 온도($T_N$)는 250 K로 결정되었다. 12 K에서의 $M\ddot{o}ssbauer$ 스펙트럼을 결정구조에서 기인한 4개 세트의 6라인 공명흡수선으로 분석하였으며, 상온에서의 $M\"{o}ssbauer$ 스펙트럼은 3개의 single과 1개의 doublet이 중첩된 형태를 보였다. 상온에서 singlet들의 이성질체 이동치는 $Fe^{3+}$의 이온 상태를 나타내는 $0.20{\pm}0.01mm/s$ 전후의 값을, doublet은 $Fe^{2+}$의 이온 상태를 나타내는 $0.70{\pm}0.01mm/s$의 값을 갖는 것을 알 수 있었다. 상온에서의 $Fe^{3+}$$Fe^{2+}$간의 면적비율은 1:1로 나타났으나, 온도가 상승함에 따라 doublet 형태가 점차 사라지다가 360 K에서는 singlet 형태의 단일 흡수선으로 나타났다. 이는 $LuFe_2O_4$물질에서 나타내는 자발분극현상이 철 이온이 가지고 있는 거동의 변화 때문인 것으로 해석된다.