• Title/Summary/Keyword: M2 polarization

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Characteristics Comparison of Prepared Films According to Influence of Adsorption Inhibitor in the Condition of Deposition (PVD증착용 흡착인히비터의 영향에 따른 제작막의 특성 비교)

  • 이찬식;윤용섭;권식철;김기준;이명훈
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.11a
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    • pp.67-67
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    • 2001
  • The structure zone model has been used to provide an overview of the relationship between the microstructure of the films deposited by PVD and the most prominent deposition condition.s. B.AMovchan and AV.Demchishin have proposed it firstls such model. They concluded that the general features of the resulting structures could be correlated into three zones depending on $T/T_m$. Here T m is the melting point of the coating material and T is the substrate temperature in kelvines. Zone 1 ($T/Tm_) is dominated by tapered macrograins with domed tops, zone 2 ($O.3) by columnar grains with denser boundaries and zone 3 ($T/T_m>O.5$) by equiaxed grains formed by recrystallization. J.AThomton has extended this model to include the effect of the sputtering gas pressure and found a fourth zone termed zone T(transition zone) consisting of a dense array of poorly defined fibrous grains. R.Messier found that the zone I-T boundary (fourth zone of Thorton) varies in a fashion similar to the film bias potential as a function of gas pressure. However, there has not nearly enough model for explaining the change in morphology with crystal orientation of the films. The structure zone model only provide an information about the morphology of the deposited film. In general, the nucleation and growth mechanism for granular and fine structure of the deposited films are very complex in an PVD technique because the morphology and orientation depend not only on the substrate temperature but also on the energy of deposition of the atoms or ions, the kinetic mechanism between metal atoms and argon or nitrogen gas, and even on the presence of impurities. In order to clarify these relationship, AI and Mg thin films were prepared on SPCC steel substrates by PVD techniques. The influence of gas pressures and bias voltages on their crystal orientation and morphology of the prepared films were investigated by SEM and XRD, respectively. And the effect of crystal orientation and morphology of the prepared films on corrosion resistance was estimated by measuring polarization curves in 3% NaCI solution.

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Evaluation of Long Term Operation of Cross-flow Molten Carbonate Fuel Cell Stack (교차류형 100W급 용융탄산염 연료전지 스택 장기운전평가)

  • Lim, H.C.;Seol, J.H.;Ryu, C.S.;Lee, C.W.;Hong, S.A.
    • Transactions of the Korean hydrogen and new energy society
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    • v.6 no.2
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    • pp.53-63
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    • 1995
  • A 100kW class stack consisting of 10 molten carbonate fuel cells has been fabricated. Internally manifold stack has been tested for endurance. Each cell in the stack had an electrode area of $100cm^2$ and reactant gases were distributed in each cells in a cross-flow configuration. Initial and long term operation performance of the stack was investgated as a function of gas utilization using a specially designed small scale stack test facility. It was possible to have a stack with an output of more than 100W using an anode gas of 72% $H_2/18%$ $CO_2/10%H_2O$ and cathode gas of 33% $O_2/67%$ $CO_2$ and 70% Air 30% $CO_2$. The output and voltage of the stack at a current 15A($150mA/cm^2$) and gas utilization of 0.4 showed 125.8W and 8.39V respectively by elapsed time of 310 hours operation. In long term operation characteristics, the voltage drop of 52.4mV/1000hour was observed after more than 1,840 hours operation. Among the voltage drop, the OCV loss was highest than other voltage loss such as internal resistance and electrode polarization. Non uniformity of 2voltages and degradation of cell voltage in the stack was observed in according to changing the utilization rate after a long term operation. Further work for increasing the performance prolonging the life of the stack are required.

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Characteristics of Memory Windows of MFMIS Gate Structures (MFMIS 게이트 구조에서의 메모리 윈도우 특성)

  • Park, Jun-Woong;Kim, Ik-Soo;Shim, Sun-Il;Youm, Min-Soo;Kim, Yong-Tae;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.319-322
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    • 2003
  • To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.

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Unidirectonal single-mode operation of a Nd:YAG laser by using a planar semimonolithic ring cavity (평면 반일체 고리형 공진기를 이용한 Nd:YAG 레이저의 단방향 단일 모드 발진)

  • 박종락;이해웅;윤태현;정명세
    • Korean Journal of Optics and Photonics
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    • v.10 no.4
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    • pp.311-317
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    • 1999
  • Unidirectional single-mode operation of a diode-pumped Nd:YAG laser with a planar semimonolithic ring cavity has been demostrated at 1064 nm. The semimonolithic cavity consists of a laser active medium placed in a magnetic field, a crystal quartz plate, and an output coupling mirror. They form an optical diode by acting each part as a Faraday rotator, a reciprocal polarization rotator and a partial polarizer, respectively. An eigenpolarization theory for the cavity configuration was presented and losses for the eigenmodes were calculated. A pump-limited single-mode output power of 155 mW and a slope efficiency of 17% were obtained when the laser was pumped by a 1.2 W, 809 nm diode-laser. A laser linewidth of less than 100 kHz is inferred from a beat note frequency spectrum between two identical laser systems and continous single-mode tuning range was more than 2 GHz.

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Tribological Behavior of Multilayered WC-Ti1-xAlxN Coatings Deposited by Cathodic Arc Deposition Process on High Speed Steel

  • Kim, Jung Gu;Hwang, Woon Suk
    • Corrosion Science and Technology
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    • v.5 no.2
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    • pp.52-61
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    • 2006
  • Recently, much of the current development in surface modification engineering are focused on multilayered coatings. Multilayered coatings have the potential to improve the tribological properties. Four different multilayered coatings were deposited on AISI D2 steel. The prepared samples are designed as $WC-Ti_{0.6}Al_{0.4}N$, $WC-Ti_{0.53}Al_{0.47}N$, $WC-Ti_{0.5}Al_{0.5}N$ and $WC-Ti_{0.43}Al_{0.57}N$. The multilayered coatings were investigated with respect to coating surface and cross-sectional morphology, roughness, adhesion, hardness, porosity and tribological behavior. Especially, wear tests of four multilayered coatings were performed by using a ball-on-disc configuration with a linear sliding speed of 0.017 m/sec, 5.38 N load. The tests were carried out at room temperature in air by employing AISI 52100 steel ball ($H_R=66$) having a diameter of 10 mm. The surface morphology, and topography of the wear scars of samples and balls have been determined by using scanning electron spectroscopy (SEM). Results have showed an improved wear resistance of the $WC-Ti_{1-x}Al_xN$ coatings with increasing of Al concentration. $WC-Ti_{0.43}Al_{0.57}N$ coating with the lower surface roughness and porosity with good adhesion enhanced wear resistance.

The influence of EAF dust on resistivity of concrete and corrosion of steel bars embedded in concrete

  • Almutlaq, Fahad M.
    • Advances in concrete construction
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    • v.2 no.3
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    • pp.163-176
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    • 2014
  • Essentially, when electrical current flows easily in concrete that has large pores filled with highly connective pore water, this is an indication of a low resistivity concrete. In concrete, the flow of current between anodic and cathodic sites on a steel reinforcing bar surface is regulated by the concrete electrical resistance. Therefore, deterioration of any existing reinforced concrete structure due to corrosion of reinforcement steel bar is governed, to some extent, by resistivity of concrete. Resistivity of concrete can be improved by using SCMs and thus increases the concrete electrical resistance and the ability of concrete to resist chloride ingress and/or oxygen penetration resulting in prolonging the onset of corrosion. After depassivation it may slow down the corrosion rate of the steel bar. This indicates the need for further study of the effect of electric arc furnace dust (EAFD) addition on the concrete resistivity. In this study, concrete specimens rather than mortars were cast with different additions of EAFD to verify the electrochemical results obtained and to try to understand the role of EAFD addition in influencing the corrosion behaviour of reinforcing steel bar embedded in concrete and its relation to the resistivity of concrete. The results of these investigations indicated that the corrosion resistance of steel bars embedded in concrete containing EAFD was improved, which may link to the high resistivity found in EAFD-concrete. In this paper, potential measurements, corrosion rates, gravimetric corrosion weight results and resistivity measurements will be presented and their relationships will also be discussed in details.

Densification and Electrical Properties of Screen-printed PZT Thick Films (스크린 프린팅법으로 제작한 PZT 후막의 치밀화와 전기적 특성)

  • Park, Sang-Man;Lee, Sung-Gap
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.7
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    • pp.667-672
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    • 2006
  • Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT(52/48)) thick films were fabricated by the screen-Printing method on the alumina substrates, and $PbTiO_3$ (PT) Precursor solution, which prepared by sol-gel method, was spin-coated on the PZT(52/48) thick films to obtain a densification. Its structural and electrical properties of the PZT(52/48) thick films with the treatment of PT precursor solution coating were investigated. The particle size of the thick films was increased with increasing the number of coatings and the thickness of the PZT-6 (6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PT sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 475 and 2 %, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $32.6{\mu}C/cm^2$, 15 kV/cm and 60 kV/cm, respectively.

Structural and ferroelectric characteristics of sol-gel $Pb(Zr_{1-x}Ti_x)O_3$ thin films according to the sintering conditions and Zr/Ti mol% (소성 조건과 Zr/Ti 몰비에 따른 졸겔 $Pb(Zr_{1-x}Ti_x)O_3$ 박막의 구조 및 강유전 특성)

  • 김준한;윤현상;박정흠;장낙원;박창엽
    • Electrical & Electronic Materials
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    • v.9 no.8
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    • pp.836-850
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    • 1996
  • In this study, we have analyzed structural analysis and measured ferroelectric characteristics of PZT thin films prepared by sol gel process with different sintering conditions and different Zr/Ti mot%. When the Zr mot% of PZT thin film was increased, it was found that the remanent. polarization and coercive field were decreased and increased, respectively. Also, the maxium dielectric constant of PZT(50/50) thin film was 786.8. We got double hysteresis(anti-fcrroelectric) curve from PbZrO$_{3}$ thin film. As heating rate goes up, pyrochlore phase of PZT thin film was decreased and dielectric and ferroelectric characteristics were improved. As a result of variation of sintering temperature and time 500.deg. C-800.deg. C and 5 sec.-8 hours, respectively, we got optimal sintering temperature and time. The optimium sintering temperature and time of conventional furnace method and rapid thermal processing method were 650.deg. C-700.deg. C for 30-60 minutes and 700.deg. C/20 seconds-2 minutes, respectively.

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Structural and Dielectric Properties of $PbTiO_3$ Ferroelectric Thin Film Prepared by Sol-Gel Processing (Sol-Gel법으로 제조된 $PbTiO_3$ 강유전 박막의 구조적, 유전적 특성)

  • 김준한;백동수;박창엽
    • Journal of the Korean Ceramic Society
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    • v.30 no.9
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    • pp.695-700
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    • 1993
  • In this study, we prepared Pb-Ti stock solution by sol-gel processing and deposited PbTiO3 thin film on a Pt coated SiO2/Si wafer by spin coating using the stock solution. We used lead acetate trihydrate and titanium isopropoxide. The stock solution was partially hydrolized and finally a 0.25M coating solution was prepared. We achieved spin coating at 4000rpm for 30 seconds and heated the thin film at 375$^{\circ}C$ for 5 minutes and at $600^{\circ}C$ for 5 minutes successively, first and second heating state. And the thin film was finally sintered at 90$0^{\circ}C$ for 1 hour in the air. The upper electrode of the thin film was made by gold sputtering and was cricle shape with radius 0.4mm. Measured dielectric constant, dissipation factor and phase transition temperature(Cuire Temp.) were about 275, 0.02 and 521$^{\circ}C$ respectively. To observe ferroelectric characteristics we calculated Pr(remnant polarization) and Ec(coercive field) byhysteresis curve. Ec was 72kV/cm and Pr was 11.46$\mu$C/$\textrm{cm}^2$.

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Pulse Shortening by a Kerr Cell in an Iodine Laser and the Amplification of a Shortened Pulse (Kerr cell을 이용한 옥소 레이저의 펄스폭 단축과 압축된 펄스의 증폭)

  • ;;;;M.R.Motchalov
    • Korean Journal of Optics and Photonics
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    • v.6 no.1
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    • pp.26-32
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    • 1995
  • A Kerr cell was utilized as an optical shutter to generate a shortened pulse and as an isolator between amplifiers in an iodine laser system. By rotating the polarization of incident laser pulse only during the timing window of high voltage applied to the Kerr cell, shortened pulses of 5 ns and 1 ns, corresponding to the difference in propagation time of two coaxial cables, were obtained. It was also noticed that more than one timing window of Kerr cell was produced with a long incident laser pulse from the oscillator. The measured transmittance of Kerr cell with respect to applied voltage was compared with the theoretical estimation using the electro-optic Kerr effect theory. Through the amplification of the shortened pulse in iodine amplifiers. a pulse of 0.5 GW(2 J in 4 ns) was obtained. ained.

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