• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.356-361
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• 2001

The structureal, dielectric and piezoelectric properties of Pb[(Sb$\_$1/2/Nb$\_$1/2/)$\_$x/-(Ni$\_$1/3/Nb$\_$2/3/)$\_$0.15-x/-(Zr$\_$y/Ti$\_$1-y/)$\_$0.85/]O$_3$(x=0∼0.05, y=0.47∼0.52) ceramics were investigated with the substitution of Pb(Sb$\_$1/2/Nb$\_$1/2/)O$_3$(abbreviated PSN) and the Zr/Ti ratio. At Zr/Ti ratio of 50/50, tetragonality was decreased and grain size abruptly decreased with the increase of PSN substitution. Curie temperature was decreased and dielectric constant increased with the substitution of PSN. The coercive field increased and remnant polarization decreased with the substitution of PSN. Electromechanical coupling factor(k$\_$p/) showed the highest value of 0.622 at 1mol% PSN, but mechanical quality factor(Q$\_$m/) showed the minimum value at that composition. Dielectric constant and electromechanical coupling factor with the Zr/Ti ratio showed maximum values at Zr/Ti ratio of 50/50 and mechanical quality factor showed minimum values near the Zr/Ti ratio of 50/50.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.255-258
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• 2000

In this study, the structural, dielectric and piezoelectric properties of Pb[(Sb$\sub$1/2/Nb$\sub$1/2/)$\sub$x/- (Ni$\sub$1/3/Nb$\sub$2/3/)$\sub$0.15-x/- (Zr,Ti)$\sub$0.85/]O$_3$(x = 0, 0.01, 0.02, 0.03, 0.04, 0.05) ceramics is investigated as a function of Pb(Sb$\sub$1/2/Nb$\sub$1/2/)O$_3$ (abbreviated PSN) substitution. With the increase of PSN substitution, the crystal structure is transO$_3$formed from the tetragonal phase to the rhombohedral phase and the grain size is decreased abruptly. The curie temperature is decreased with the PSN substitution. The dielectric constant is increased with the PSN substitution and maximum value of 2290 is obtained at 4mol% PSN. With the PSN substitution, the coercive field is increased and the remnant polarization is decreased. The Electromechanical coupling factor(k$\sub$p/) Is showed the highest value of 0.622 at lmol% PSN and the mechanical quality factor(Q$\sub$m/) is decreased abruptly with the PSN substitution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.348-351
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• 2007

Recently, Nanotechnology becomes a major issue in most part of industries. Nanotechnology is expected to develop various application products due to nano material mired composites is improved physical and electrical properties compared to conventional composites materials. Dielectric and insulation materials need to develop and improve like other field about nanotechnology. In this paper, we reported dielectric dispersion by size(no filler, $1.2{\mu}m$, 500 nm, 10 nm), frequencies(60, 120, 1 kHz), and temperatures($30{\sim}170^{\circ}C$). Dielectric constant of composites materials with filler shows higher than composites materials without filler and increased depending on rising temperatures in low frequency region. It was the effect that nano-filler and impurities in composites contributed to electrical conductivity. And dielectric properties depending on temperatures shows to change in low frequency region dramatically We analyzed interfacial polarization in low frequency region($10^{-2}$ Hz) and oriented polarization in high frequency region($10^{-5{\sim}6}$ Hz) on composites materials.

• Journal of the Korean institute of surface engineering
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• v.27 no.3
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• pp.166-175
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• 1994

The effect of Co addition on the electrochemical performance and structural stability of porous Ni anode for molten carbonate fuel cell(MCFC) was evaluated by the anodic polarization and the sintering test in the simulated MCFC anode condition ($650^{\circ}C$, 80% $H_2$+20%$CO_2$). The anode current density ranged from 110mA/$cm^2$ to 144mA/$cm^2$ was obtained at +100mV overpotential by additions of Co up to 10 wt.%. The sintering resistance of Ni-Co anodes was higher than that of the pure Ni anode. The increase of sintering resistance seemed to be to the lower diffusion coefficient of Co than that of Ni.

• Korean Journal of Optics and Photonics
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• v.17 no.2
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• pp.175-180
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• 2006

A single sideband(SSB) modulator operating at 5.5 GHz was fabricated by polarization inversion techniques. The dimension of domain inversion in a $LiINbO_3$ Mach-Zehnder structure was precisely controlled so that the RF signal applied on two Mach-Zehnder arms gives rise to $90^{\circ}$ effective phase difference. The single sideband suppression was maximized by optimization of the polarization status of the optical input and by the DC bias value. The fabricated device showed the center frequency of 5.8 GHz and the maximum sideband suppression of 33dB, where the bandwidth of 15 dB sideband suppression ranged over a 2.5 GHz span. The optical phase delay could be regulated by the DC bias voltage, fur example, the enhanced optical modulation sideband was distinctively switched from the upper sideband to the lower sideband by changing the DC bias voltage from 1.9 V to -10.6 V.

• Proceedings of the KSRS Conference
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• 1999.11a
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• pp.485-490
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• 1999

Wind vector information over the ocean is currently obtained using multiple beam scatterometer data. The scatterometers on ERS-1/2 generate wind vector information with a spatial resolution of 50km and accuracies of $\pm$2m/s in wind speed and $\pm$20$^{\circ}$ in wind direction. Synthetic aperture radar (SAR) data over the ocean have the potential of providing wind vector information independent of weather conditions with finer resolution. Finer resolution wind vector information can often be useful particularly in coastal regions where the scatterometer wind information is often corrupted because of the lower resolution system characteristics which is often contaminated by the signal returns from the coastal areas or ice in the case of arctic environments. In this paper we tested CMOD_4 and CMOD_IFR2 algorithms for extracting the wind vector from SAR data. These algorithms require precise estimation of normalized radar cross-section and wind direction from the SAR data and the local incidence angle. The CMOD series algorithms were developed for the C-band, VV-Polarized SAR data, typically for the ERS SAR data. Since RADARSAT operates at the same C-band but with HH-Polarization, the CMOD series algorithms should not be used directly. As a preliminary approach of resolving with this problem, we applied the polarization ratio between the HH and VV polarizations in the wind vectors estimation. Two test areas, one in front of Inchon and several sites around Jeju island were selected and investigated for wind vector estimation. The new results were compared with the wind vectors obtained from CMOD algorithms. The wind vector results agree well with the observed wind speed data. However the estimation of wind direction agree with the observed wind direction only when the wind speed is greater than approximately 3.0m/s.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.120-120
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• 2016

Ti-6Al-4V alloy have been used for dental implant because of its excellent biocompatibility, corrosion resistance, and mechanical properties. However, the integration of such implant in bone was not in good condition to achieve improved osseointergraiton. For solving this problem, calcium phosphate (CaP) has been applied as coating materials on Ti alloy implants for hard tissue applications because its chemical similarity to the inorganic component of human bone, capability of conducting bone formation and strong affinity to the surrounding bone tissue. Various metallic elements, such as strontium (Sr), magnesium (Mg), zinc (Zn), sodium (Na), silicon (Si), silver (Ag), and yttrium (Y) are known to play an important role in the bone formation and also affect bone mineral characteristics, such as crystallinity, degradation behavior, and mechanical properties. Especially, Zn is essential for the growth of the human and Zn coating has a major impact on the improvement of corrosion resistance. Plasma electrolytic oxidation (PEO) is a promising technology to produce porous and firmly adherent inorganic Zn containing $TiO_2(Zn-TiO_2)$coatings on Ti surface, and the a mount of Zn introduced in to the coatings can be optimized by altering the electrolyte composition. In this study, corrosion behavior of Ti-6Al-4V alloy after plasma electrolytic oxidation in solutions containing Ca, P and Zn were studied by scanning electron microscopy (SEM), AC impedance, and potentiodynamic polarization test. A series of $Zn-TiO_2$ coatings are produced on Ti dental implant using PEO, with the substitution degree, respectively, at 0, 5, 10 and 20%. The potentiodynamic polarization and AC impedance tests for corrosion behaviors were carried out in 0.9% NaCl solution at similar body temperature using a potentiostat with a scan rate of 1.67mV/s and potential range from -1500mV to +2000mV. Also, AC impedance was performed at frequencies ranging from 10MHz to 100kHz for corrosion resistance.

• Journal of Electrochemical Science and Technology
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• v.7 no.2
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• pp.153-160
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• 2016

The inhibition ability of N,N-bis(2,4-dihydroxyhydroxybenzaldehyde)-1,3-Propandiimine (DHBP) as a schiff base against the corrosion of API-5L-X65 steel in 1 M HCl solution was evaluated by electrochemical impedance spectroscopy, potentiodynamic polarization and scanning electron microscopy. Electrochemical impedance studies indicated that DHBP inhibited corrosion by blocking the active corrosion sites. The inhibition efficiency increased with increasing inhibitor concentrations. EIS data was analysed to equivalent circuit model and showed that the charge transfer resistance of steel increased with increasing inhibitor concentration whilst the double layer capacitance decreased. The adsorption of this compound obeyed the Langmuir adsorption isotherm. Gibbs free energy of adsorption was calculated and indicated that adsorption occurred through physical and spontaneous process. The corrosion inhibition mechanism was studied by potential of zero charge. Polarization studies indicated that DHBP retards both the cathodic and anodic reactions through adsorption on steel surface. Scanning electron microscopy was used to study the steel surface with and without inhibitor.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.983-988
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• 1997

We investigated the structural and dielectric properties of PZT(20/80)/PZT(80/20) heterolayered thin films that fabricated by the alkoxide-based Sol-Gel method. PZT(20/80)/PZT(80/20) heterolayered thin films were spin-coated on the Pt/Ti/SiO$_2$/Si substrate with PZT(20/80) film of tetragonal structure and PZT(80/20) film of rhombohedral structure by turns. Each layers were dried to remove the organic materials at 30$0^{\circ}C$ for 30min and sintered at $650^{\circ}C$ for 1hr. This procedure was repeated several times to form PZT(20/80)/PZT(80/20) heterolayered films and thickness of the film obtained by one-times of drying/sintering process was approximately 80-90nm. PZt-1, 3, 5 films with top layer of PZT(20/80) film of tetragonal structure showed fine grain structure and PZT-2, 4, 6 films with top layer of PZT(80/20) film of rhombohedral structure showed the dense grain microstructure without rosette-type. Dielectric constant and dielectric loss of the PZT-6 film were approximaterly 1385 and 3.3% respectively. Increasing the number of coatings remanent polarization was increased and coercive field was decreased and the values of the PZT-6 film were 8.13$\mu$C/cm$^2$and 12.5kV/cm respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.