• 대한화학회지
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• 제43권2호
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• pp.182-192
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• 1999

글로우 방전(Glow Discharge, GD)과 유도결합플라스마(Inductively Coupled Plasma, ICP)-원자 방출분광법(Atomic Emission Spectrometer, AES)에서 사용되는 새로운 장치를 개발하였다. ICP-AES에서 GDAES로 전환하는 데 불과 15분 정도 소요되기 때문에, 고체 시료 및 액체시료에 포함된 극미량 원소분석을 신속하게 수행할 수 있다. 실험변수 중에서 냉각기체 유속, 시료운반기체 유속, 절단기체 유속, 보조기체 유속, 측정깊이, 이온 통과관 크기, 그리고 rf 전원의 세기 변화에 따른 원자 방출 복사선 변화에 미치는 영향을 조사 연구하였다. Cd(I) 228.8 nm, Mn(II) 257.61 nm, and Fe(II) 259.95 nm에서 측정한 검출한계는 각각 3.86, 1.49, 5.79 ppb로 측정되었으며, 직선성은 1.000으로서 우수하였다.

• 분석과학
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• 제15권4호
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• pp.335-340
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• 2002

유도결합 플라스마 질량분석법 (ICP-MS)을 이용하여 모발 중 다원소 동시 정량법을 확립하였다. 0.05 g의 모발 시료에 내부표준물질인 In을 가하고 질산 1.5 mL와 함께 테플론 가압분해 용기에 넣어 마이크로파를 이용하여 분해하는 시료전처리법을 사용하였다. 측정값의 정확도 및 신뢰도를 확인하기 위하여 모발 인증표준물질인 GBW 09101을 반복 분석하였는데 측정값은 인증값과 불확도 범위 내에서 잘 일치하는 결과를 얻었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.921-926
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• 2001

The link for the Superconducting Flux Flow Transistor (SFFT) which is based on the flux flow has been fabricated by the ICP etching methods. The channel width and the thickness of the SFFT were a 3 ${\mu}$m and about 300 nm, respectively. The superconducting characteristic of the link was measured by the x-ray diffraction and the E.D.S.. The SFFT etched by ICP showed an I-V characteristic like the three terminal transistor.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.891-894
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• 1999

ICP reactor produces high-density and high-uniformity plasma in large area, are has excellent characteristic of direction in the case of etching. Until now, many algorithms used one mesh method. These algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously. And difficult consider am-bipolar drift effect.

• 분석과학
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• 제14권5호
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• pp.416-421
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• 2001

수소화물 발생 유도결합 플라스마 원자 방출 분광법으로 주석을 분석할 때 연속 흐름 수소화물 발생 장치에 사용되는 환원제 및 산의 농도에 대하여 최적조건을 확립하였다. 시료에 함유되어 있는 플루오르화 이온이 주석의 수소화물 발생을 방해하는 영향과 이러한 영향을 최소화하기 위한 여러 가지 예비환원제를 비교 실험하였다. 환원제 및 안정제의 농도가 $NaBH_4$ 1~2%/NaOH 1.0 M인 조건에서 우수한 수소화물을 발생시키는 산농도는 0.5~1.0 M 이었으며, 또한 플루오르화 이온의 방해영향이 매우 크게 관찰되었지만 boric acid 및 L-cysteine의 혼합용액은 이런 영향을 최소화하여 가장 효과적인 주석의 수소화물 발생 보조제로 확인되었다. 플루오르화 이온이 함유되어 있는 용액에서 미량의 주석을 분석하여 회수율이 100~108 %의 결과를 얻었다.

• Bulletin of the Korean Chemical Society
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• 제26권12호
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• pp.1991-1995
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• 2005

Sensitivity factors of elements by a glow discharge mass spectrometry (GD-MS) were intensively investigated and compared with a laser ablation inductively coupled plasma-mass spectrometry (ICP-MS). In case of copper matrix, the sensitivity factor by GD-MS generally decreases with the increase of the mass number of element. The details are a little different between each data measured by Faraday and multiplier detectors. The factor by a multiplier detector drastically decreases with the mass increase in the region of low mass as in Faraday detector’s case, but slowly in the high mass region. On the contrast, the sensitivity factor of solution standard by a conventional ICP-MS slowly increases with the increase of elemental mass number even though there are some exceptions such as gold and also the sensitivity factor by a laser ablation ICP MS generally increases with mass number of element in the specimen of glass type. In case of steel matrix, any definite trends could not be shown in the relationship between the GD-MS’s sensitivity factor and elemental mass.

• Nuclear Engineering and Technology
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• 제40권4호
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• pp.311-318
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• 2008

In modem power reactors, nuclear fuels have recently reached 55,000 MWd/MtU from the initial average burnup of 35,000 MWd/MtU to reduce the fuel cycle cost and waste volume. At such high burnups, a fuel pellet produces fission products proportional to the burnup and creates a typical high burnup structure around the periphery region of the pellet, producing the so called 'rim effect'. This rim region of a highly burnt fuel is known to be ca. $200\;{\mu}m$ in width and is known to affect the fuel integrity. To characterize the local burnup in the rim region, solid sampling in the micro meter region by laser ablation is needed so that the distribution of isotopes can be determined by ICP-MS. For this procedure, special radiation shielding is required for personnel safety. In this study, we installed a radiation shielded laser ablation ICP-MS system, and a performance test of the developed system was conducted to evaluate the safe operation of instruments.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.380-381
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• 2012

Bioinspired sea urchin-like structures were fabricated on silicon by inductively coupled plasma (ICP) etching using lens-like shape hexagonally patterned photoresist (PR) patterns and subsequent metal-assisted chemical etching (MaCE) [1]. The lens-like shape PR patterns with a diameter of 2 ${\mu}m$ were formed by conventional lithography method followed by thermal reflow process of PR patterns on a hotplate at $170^{\circ}C$ for 40 s. ICP etching process was carried out in an SF6 plasma ambient using an optimum etching conditions such as radio-frequency power of 50 W, ICP power of 25 W, SF6 flow rate of 30 sccm, process pressure of 10 mTorr, and etching time of 150 s in order to produce micron structure with tapered etch profile. 15 nm thick Ag film was evaporated on the samples using e-beam evaporator with a deposition rate of 0.05 nm/s. To form Ag nanoparticles (NPs), the samples were thermally treated (thermally dewetted) in a rapid thermal annealing system at $500^{\circ}C$ for 1 min in a nitrogen environment. The Ag thickness and thermal dewetting conditions were carefully chosen to obtain isolated Ag NPs. To fabricate needle-like nanostructures on both the micron structure (i.e., sea urchin-like structures) and flat surface of silicon, MaCE process, which is based on the strong catalytic activity of metal, was performed in a chemical etchant (HNO3: HF: H2O = 4: 1: 20) using Ag NPs at room temperature for 1 min. Finally, the residual Ag NPs were removed by immersion in a HNO3 solution. The fabricated structures after each process steps are shown in figure 1. It is well-known that the hierarchical micro- and nanostructures have efficient light harvesting properties [2-3]. Therefore, this fabrication technique for production of sea urchin-like structures is applicable to improve the performance of light harvesting devices.

• 한국재료학회지
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• 제11권10호
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• pp.900-906
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• 2001

We prepared tunnel magnetoresistance(TMR) devices of Ta($50\AA$)/NiFe($50\AA$)/IrMn(150$\AA$)/CoFe($50\AA$)/Al ($13\AA$)-O/CoFe($40\AA$)/NiFe($400\AA$)/Ta(50$\AA$) structure which has 100$\times$100 $\mu\textrm{m}^2$ junction area on $2.5\Times2.5 cm^{2}$ $Si/SiO_2$ ($1000\AA$) substrates by a inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using a ICP plasma oxidation method by varying oxidation time from 80 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We used a high resolution transmission electron microscope(HRTEM) to investigate microstructural evolution of insulating layer. The average resistance of devices increased from 16.38 $\Omega$ to 1018 $\Omega$ while MR ratio decreased from 30.31 %(25.18 %) to 15.01 %(14.97 %) as oxidation time increased from 80 sec to 360 sec. The values in brackets are calculated values considering geometry effect. By comparing cross-sectional TEM images of 220 sec and 360 sec-oxidation time, we found that insulating layer of 360 sec-oxidized was 30 % and 40% greater than that of 150 sec-oxidized in thickness and thickness variation, respectively. Therefore, we assumed that increase of thickness variation with oxidation time is major reason of MR decrease. The resistance of 80 sec-oxidized specimen was 160 k$\Omega$$\mu\textrm{m}^2$ which is appropriate for industrial needs of magnetic random access memory(MRAM) application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.361-365
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• 2003

Planar Inductively Coupled Plasma (PICP) etching of InGaP was performed in $BCl_3,\;BCl_3/Ar\;and\;BCl_3/Ne$ plasmas as a function of ICP source power ($0\;{\sim}\;500\;W$), RIE chuck power ($0\;{\sim}\;150\;W$), chamber pressure ($5\;{\sim}\;15\;mTorr$) and gas composition of $BCl_3/Ar\;and\;BCl_3/Ne$. Total gas flow was fixed at 20 sccm (standard cubic centimeter per minute). Increase of ICP source power and RIE chuck power raised etch rate of InGaP, while that of chamber pressure reduced etch rate. We also found that some addition of Ar and Ne in $BCl_3$ plasma improved etch rate of InGaP. InGaP etch rate was varied from $1580\;{\AA}/min$ with pure $BC_3\;to\;2800\;{\AA}/min$ and $4700\;{\AA}/min$ with 25 % Ar and Ne addition, respectively. Other process conditions were fixed at 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr chamber pressure. SEM (scanning electron microscopy) and AFM (atomic force microscopy) data showed vertical side wall and smooth surface of InGaP at the same condition. Proper addition of noble gases Ar and Ne (less than about 50 %) in $BCl_3$ inductively coupled plasma have resulted in not only increase of etch rate but also minimum preferential loss and smooth surface morphology by ion-assisted effect.