• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.31-40
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• 1999

Characteristics of monopole antenna and planar conductor structure mounted on handheld telephone are anlayzed by using FDTD method. Feeding of monopole antenna is implemented with lumped elements and plastic case is coated on the surface of conductor box. Otherwise, resonant frequency of handheld telephone mounting monopole antenna with no plastic case is 877MHz, when plastic case (${\varepsilon}_r=2$) is coated, the resonant frequency is down to 82MHz and the bandwidth is broadened about 1.5 times. Planar structure of handheld telephone mounted on the body makes to change far-field gain radiation patterns. In this case, radiation patterns are somewhat asymmetrical. Handheld telephone using PIFA(Planar Inverted F Antenna), instead of monopole antenna, is resonated at frequency 1.52GHz that is available onPCS. In the radiation pattern of this structure, azimuth that electric field intensity is presented below 20dB is 14$^{\circ}$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.10 s.113
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• pp.959-966
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• 2006

This paper proposes a new concept about dual band predistortion linear power amplifier(PD LPA) using diplexer for digital cellular ($f_o$=880 MHz) and IMT-2000($f_o$=2,140 MHz) base stations. The diplexer is composed of low pass filter having defected ground structure(BGS) microstrip line and high pass filter having high-Q lumped capacitors and distributed elements. The proposed predistorter adopts a reflection type intermodulation signal generator with 3 dB hybrid coupler for good reflection characteristic. for a forward link one carrier CDMA IS-95A 1FA and WCDMA 1FA signal, the proposed dual band PD LPA shows the adjacent channel leakage ratio(ACLR) improvement about 10 dB and 9.36 dB for digital cellular and IMT-2000 band, respectively.

• Structural Engineering and Mechanics
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• v.25 no.1
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• pp.53-73
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• 2007

In this study, an effective load increment method for multi modal adaptive non-linear static (pushover) analysis (NSA) for building type structures is presented. In the method, lumped plastisicity approach is adopted and geometrical non-linearties (second-order effects) are included. Non-linear yield conditions of column elements and geometrical non-linearity effects between successive plastic sections are linearized. Thus, load increment needed for formation of plastic sections can be determined directly (without applying iteration or step-by-step techniques) by using linearized yield conditions. After formation of each plastic section, the higher mode effects are considered by utilizing the essentials of traditional response spectrum analysis at linearized regions between plastic sections. Changing dynamic properties due to plastification in the system are used on the calculation of modal lateral loads. Thus, the effects of stiffness changes and local mechanism at the system on lateral load distribution are included. By using the proposed method, solution can be obtained effectively for multi-mode whereby the properties change due to plastifications in the system. In the study, a new procedure for determination of modal lateral loads is also proposed. In order to evaluate the proposed method, a 20 story RC frame building is analyzed and compared with Non-linear Dynamic Analysis (NDA) results and FEMA 356 Non-linear Static Analysis (NSA) procedures using fixed loads distributions (first mode, SRSS and uniform distribution) in terms of different parameters. Second-order effects on response quantities and periods are also investigated. When the NDA results are taken as reference, it is seen that proposed method yield generally better results than all FEMA 356 procedures for all investigated response quantities.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.973-981
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• 2005

A modified half wavelength loaded line antenna is designed and implemented for mobile terminal applications. The antenna is constructed with a radiating element of half wavelength loaded line structure, dielectric substrate, feeding post and two shorting posts on the experimental PCB. The shorting posts are located at each side of the radiating element and lumped inductance elements are on between each shorting post and ground of PCB. By controlling value of inductors, one can adjust resonant frequency and input impedance respectively. Within inductance value of 12 nH, the antenna can have wide operating range of $1,470\~2,660\;MHz$ and good impedance matching. The measured peak gains are between -0.45 dBi and 2.03 dBi for the operating band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.989-994
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• 2005

A MMIC(Monolithic Microwave Integrated Circuit) switch chip using InGaAs/GaAs p-HEMT process has been designed for MSM(Microwave Switch Matrix) of satellite communication system. An absorptive type MMIC switch is adopted for good reflection coefficients performances of input and output ports at both on and off states. And, a quarter wavelength impedance transformer is realized with lumped elements of MIM capacitor and spiral inductor for 3 GHz band to reduce the chip size. This MMIC switch covers the frequency range of $3.2\~3.6\;GHz$. According to the on-wafer measurement, the fabricated MMIC switch with miniature size of $1.6\;mm{\times}1.3\;mm$ demonstrates insertion loss below 2 dB and isolation above 56.8 dB, and the performance coincides with simulation results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.5
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• pp.493-500
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• 2008

This paper describes a design of internal frequency modulation(FM) radio antenna fur mobile terminal. In order to control of impedance at an operating frequency of the designed antenna, the lumped constant elements of R and L chip components are used. Patch and stubs located at antenna backside are added to control an exact resonance frequency and miniaturization. A fabricated antenna sire, the measured return loss, impedance, bandwidth, and gain are $40{\times}70{\times}1$ mm, -23 dB at 99 MHz, $55-j7{\Omega}$, 22 MHz($88{\sim}110$ MHz) below -10 dB, and -15 dBi, respectively. These measured results show a good agreement with simulated results. Especially, the measured gain of fabricated antenna is similar with value of a conventional ear-phone antenna in the designed frequency band. The measured radiation pattern agrees well with the calculated omni-directional pattern.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.37 no.4
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• pp.52-58
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• 2000

In this paper, the novel dielectric resonator bandpass filter for Korea personal communication service channel combiner is proposed. The equivalent circuit of the channel bandpass filter is derived using the lumped elements. Proposed channel bandpass filter provides compact size, low insertion loss, two attenuation poles in the stop band, and excellent temperature characteristics. Two channel filters are combined with proposed dielectric resonator filter configuration to implement the 2-channel combiner. Experimental results show the validity of the proposed dielectric resonator channel bandpass filter.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.12
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• pp.7-12
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• 2008

In this paper, a highly efficiency power amplifier is presented for multi-band antenna system. The class F power amplifier operating in dual-band designed with one LDMOSFET. An operating frequency of power amplifier is 900 MHz and 2.14 GHz respectively Matching networks and harmonic control circuits of amplifier are designed by using the unit cell of composite right/left-handed(CRLH) transmission line(TL) realized with lumped elements. The CRLH TL can lead to metamaterial transmission line with the dual-band holing capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. Because the control of all harmonic components for high efficiency is very difficult, we have controled only the second- and third-harmonics to obtain the high efficiency with the CRLH TL. Also, the proposed power amplifier has been realized by using the harmonic control circuit for not only the output matching network, but also the input matching network for better efficiency.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1090-1095
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• 2003

In this paper, the modeling and design of high-Q multilayer passives and multilayer diplexer for GSM/DCS applications designed and fabricated using these passives have been investigated.. To miniaturize the system, configurations of inductor and capacitor have involved a square spiral structure and a vertically-interdigitated capacitor similar to 3D interdigital structure, respectively. Multilayer diplexers for GSM/DCS applications were designed and fabricated to apply high-Q multilayer passives to practical systems, which were designed by the proposed structural and equivalent circuit model. LPF for GSM band had the passband insertion loss of less than 0.55 dB, the return loss of more than 12 dB, and the isolation level of more than 26 dB by locating attenuation pole at 1800 MHz. HPF for DCS band had the passband insertion loss of less than 0.82 dB, the return loss of more than 11 dB, and the isolation level of more than 38 dB by locating attenuation pole at 930 MHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.1023-1028
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• 2012

A MMIC (Monolithic Microwave Integrated Circuit) mixer chip using the Schottky diode of an GaAs p-HEMT process has been developed for the I/Q demodulator of non-contact near field microwave probing system. A single balanced mixer type is adopted to achieve simple structure of the I/Q demodulator. A quadrature hybrid coupler and a quarter wavelength transmission line for 180 degree hybrid are realized with lumped elements of MIM capacitor and spiral inductor to reduce the mixer chip size. According to the on-wafer measurement, this MMIC mixer covers RF and LO frequencies of 1650MHz to 2050MHz with flat conversion loss. The MMIC mixer with miniature size of $2.5mm{\times}1.7mm$ demonstrates conversion loss below 12dB for both variations of RF and LO frequencies, LO-to-IF isolation above 43dB and RF-to-IF isolation above 23dB, respectively.