• Title/Summary/Keyword: Low-temperature

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Low Temperature PECVD for SiOx Thin Film Encapsulation

  • Ahn, Hyung June;Yong, Sang Heon;Kim, Sun Jung;Lee, Changmin;Chae, Heeyeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.198.1-198.1
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    • 2016
  • Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

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A Study on Bathochromic Finish of Poly(ethylene Terephthalate) Fabrics by Low Temperature Plasma$(O_2)$ Treatment (산소 저온 Plasma 처리에 의한 Poly(ethylene Terephthalate) 직물의 심색화에 관한 연구)

  • Cho, Hwan;Chang, Byong-Ryul;Chang, Du-Sang;Huh, Man-Woo;Cho, In-Suol;Lee, Kwang-Woo
    • Textile Coloration and Finishing
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    • v.4 no.1
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    • pp.1-9
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    • 1992
  • In order to study on the surface modification of the poly(ethylene Terephthalate)(PET) fabrics, low temperature plasma$(O_2)$ has been irradiated on the PET fabrics in various conditions. Experiments were carried out at pressure ranging from 0.5 tort to 3 tort. The properties of PET fabrics treated with low temperature plasma($(O_2)$, such as bathochromic, wettability, antistatic property were measured. Etching ratio was increased as the pressure and the output of discharge increased. When its were put on the cathode, the most efficient effect of etching according to the position of sample between anode and cathode was obtained. The bathochromic effect has more or less improved as pressure was getting higth in case of dyed fabrics treated with only low temperature plasma$(O_2)$ . And when it was treated with the low refractive index resin, the bathochromic of dyed fabrics treated with low temperature plasma$(O_2)$ was better than that of the dyed fabrics untreated.

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LOW DISSIPATION OF EXCITATION ENERGY IN THE PHOTOSYNTHETIC MACHINERY OF CHILLING-SENSITIVE PLANTS DURING LOWTEMPERATURE PHOTOINHIBITION

  • Moon, Byoung Yong;Lee, Shin Bum;Gong, Yong-Gun;Kang, In-Soon
    • Journal of Photoscience
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    • v.5 no.2
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    • pp.53-61
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    • 1998
  • Using a squash plant, a chilling-sensitive species, and a spinach plant, a chilling-resistant one, effects of chilling temperature on the photosynthetic machinery were studied in terms of chlorophyll fluorescence. When thylakoid membranes were isolated and subjected to incubation at different temperatures, spinach showed stable photosystem II activity at the low temperature side, in contrast to squash which showed quite severe inactivation at low temperature. When parameters of chlorophyll fluorescence were examined, chilling in darkness did not affect either Fv/Fm or photochemical and non-photochemical quenching, in both types of plants. However, chilling of squash plants under irradiance of medium intensity caused a specific decrease in Fv/Fm accompanied by a decline in energy-dependent quenching. Contrastingly, photosystem li of spinach plants were not much affected by light-chilling. When the pool size of zeaxanthin was examined after exposure to high light at different temperatures, squash plants was shown to have a much lower content of antheraxanthin + zeaxanthin, as compared to spinach plants, during low-temperature photoinhibition. These results suggest that chilling-sensitive plants have low capacity to dissipate excitation energy nonradiatively, when they are exposed to low-temperature photoinhibition, and, as a consequence, more vulnerable to photoinhibitory, damage to the photosynthetic apparatus.

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Low Temperature Processed Transparent Conductive Thin Films Based on Sol-Gel ZnO / Ag Nanowire (저온 형성 가능한 "졸겔 ZnO / 은 나노선" 복합 투명전도막)

  • Shin, Won-Jung;Kim, Bo Seok;Moon, Chan-Su;Cho, Won-Ki;Baik, Seung Jae
    • Current Photovoltaic Research
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    • v.2 no.3
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    • pp.110-114
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    • 2014
  • We propose a low temperature sol-gel ZnO/Ag nanowire composite thin film to fulfill low temperature and low cost requirements, which are essential criteria in future flexible electronic devices. In this proposed thin film, Ag nanowire plays the role of electrical conduction, and sol-gel ZnO provides a structural medium with a high visible transmittance. Low temperature restriction in the sol-gel fabrication process prevents sufficient oxidation of Zn acetate precursors, which were solved by a post-coating treatment with ultraviolet light irradiation. Composite thin film formation was performed by spin coating methods with a mixed precursor solution or in a sequential manner. We obtained an average visible transmittance larger than 85% and a sheet resistance smaller than $50{\Omega}/sq$. After optimization in a fabricated composite transparent conductive thin film with the thickness around 100 nm. Similar experimental demonstration in a flexible substrate (polyethyleneterephthalate) was successful, which implies a promising application opportunity of this technology.

Variations of Air Temperature, Relative Humidity and Pressure in a Low Pressure Chamber for Plant Growth (식물생장용 저압챔버 내의 기온, 상대습도 및 압력의 변화)

  • Park, Jong-Hyun;Kim, Yong-Hyeon
    • Journal of Bio-Environment Control
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    • v.18 no.3
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    • pp.200-207
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    • 2009
  • This study was conducted to analyze the variations of air temperature, relative humidity and pressure in a low pressure chamber for plant growth. The low pressure chamber was composed of an acrylic cylinder, a stainless plate, a mass flow controller, an elastomer pressure controller, a read-out-box, a vacuum pump, and sensors of air temperature, relative humidity, and pressure. The pressure leakage in the low pressure chamber was greatly affected by the material and connection method of tubes. The leakage rate in the low pressure chamber with the welding of the stainless tubes and a plate decreased by $0.21kPa{\cdot}h^{-1}$, whereas the leakage in the low pressure chamber with teflon tube and rubber O-ring was given by $1.03kPa{\cdot}h^{-1}$. Pressure in the low pressure chamber was sensitively fluctuated by the air temperature inside the chamber. An elastomer pressure controller was installed to keep the pressure in the low pressure chamber at a setting value. However, inside relative humidity at dark period increased to saturation level.. Two levels (25 and 50kPa) of pressure and two levels (500 and 1,000sccm) of mass flow rate were provided to investigate the effect of low pressure and mass flow rate on relative humidity inside the chamber. It was concluded that low setting value of pressure and high mass flow rate of mixed gas were the effective methods to control the pressure and to suppress the excessive rise of relative humidity inside the chamber.

A Study on Low-Cycle Fatigue Behavior at Elevated Temperature of High Carbon Steel Used For Structural Purpose (構造용高炭素鋼材 의 高溫 低 사이클 피勞擧動 에 關한 硏究)

  • 옹장우;김재훈
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.6 no.2
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    • pp.101-106
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    • 1982
  • This study was undertaken to determine tensile properties and low-cycle fatigue behavior of 0.6%C high carbon steel used of structural purposes at temperatures up to 500.deg.C. In the low-cycle fatigue test the upper limit was decided by elongation(i.e. the total strain range), while the lower limit was defined by the load (i.e. zero load). The following results were obtained. Both, the ultimate tensile strength and low-cycle fatigue resistance attain the maximum values near 250.deg.C. Above this temperature the values decrease rapidly as the temperature increases. The low-cycle fatigue resistance decreases whenever there is an increase of the total strain range. Because the hardness of cycle fatigued specimen correlates cyclic hardening and cyclic softening, therefore the hardness of cycle fatigued specimen is smaller than that of the nonfatigued specimen at room temperature and 500.deg.C but much larger than the hardness of the nonfatigued specimen near 250.deg.C.

Electron mobility and low temperature magnetoresistance effect in $Si/Si_{1-x}Ge_x$ quantum well devices ($Si/Si_{1-x}Ge_x$Quantum Well 디바이스에서의 전자이동도 및 저온 자기저항효과)

  • 김진영
    • Journal of the Korean Vacuum Society
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    • v.8 no.2
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    • pp.148-152
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    • 1999
  • the low temperature magnetoresistance effect, electron mobilities, and 2 Dimensional electron Gases (2DEG) properties were investigated in $Si/Si_{1-x}Ge_x$ quantum well devices. N-type $Si/Si_{1-x}Ge_x$ structures were fabricated by utilizing a gas source Molecular Beam Epitaxy (GSMBE). Thermal oxidation was carried out in a dry O atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by using a Hall effect and a magnetoresistant effect at low temperatures down to 0.4K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2DEG) in s tensile strained Si quantum well. The electron sheet density (ns) of $1.5\times10^{12}[\textrm{cm}^{-2}]$ and corresponding electron mobility of 14200 $[\textrm{cm}^2V^{-1}s^{-1}]$ were obtained at a low temperature of 0.4K from $Si/Si_{1-x}Ge_x$ structures with thermally grown oxides.

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High-temperature superconducting filter and filter subsystem for mobile telecommunication

  • Sakakibara, Nobuyoshi
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.35-39
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    • 2000
  • Large-area high-temperature superconducting (HTS) films, filter design and damage-free processing technique have been developed to fabricate low insertion loss and sharp skirt filters. Further, long life cryocooler, low temperature low noise amplifier (LNA) and cryocable have been developed to assemble HTS filter subsystem for IS-95 and IMT-2000 mobile telecommunication. The surface resistance of the films was about 0.2 milli-ohm at 70 K, 12 GHz. An 11-pole HTS filter for IS-95 telecommunication system and a 16-pole HTS filter for IMT-2000 telecommunication system were designed and fabricated using 60 {\times}$ 50 mm$^2$ and one half of 3-inch diameter YBCO films on a 0.5-mm-thick MgO substrate, respectively. We have assembled the filter and low temperature LNA in a dewar with the cryocooler. Ultra low-noise (noise figure: 0.5 dB at 70 K) and ultra sharp-skirt (40 dB/1.5 MHz) performance was presented by the IS-95 filter subsystem and the IMT-2000 filter subsystem, respectively.

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Novel Method for Polystyrene Reactions at Low Temperature

  • Katsuhiko Saido;Hiroyuki Taguchi;Yoichi Kodera;Yumiko Ishihara;Ryu, In-Jae;Chung, Seon-yong
    • Macromolecular Research
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    • v.11 no.2
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    • pp.87-91
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    • 2003
  • Thermal decomposition reactions of polystyrene using a new heating medium were carried out by a batch system at 190-280 $^{\circ}C$ to clarify the manner in which decomposition is initiated. Polystyrene obtained from a commercial source and low molecular weight compounds obtained from the thermal decomposition were analyzed by GC, GPC, IR, $^{13}$ C-NMR and GC-MS. The main chain underwent virtually no change by heat application. Polystyrene underwent decomposition below its molding temperature and the major decomposition products were 2,4,6-triphenyl-1-hexene (trimer), 2,4-diphenyl-1-butene(dimer) and styrene (monomer). Ethylbenzene, propylbenzene, naphthalene, benzaldehyde, biphenyl and 1,3-diphenylpropane were detected as minor products. This paper presents a new method for examining the decomposition of polystyrene at low temperature into volatile low molecular weight compounds.

Low temperature electron mobility property in Si/$Si_{1-x}Ge_{x}$ modulation doped quantum well structure with thermally grown oxide

  • Kim, Jin-Young
    • Journal of Korean Vacuum Science & Technology
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    • v.4 no.1
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    • pp.11-17
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    • 2000
  • The low temperature electron mobilities were investigated in Si/$Si_{1-x}Ge_{x}$ modulation Doped (MOD) quantum well structure with thermally grown oxide. N-type Si/$Si_{1-x}Ge_{x}$ structures were fabricated by a gas source MBE. Thermal oxidation was carried out in a dry $O_2$ atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by a Hall effect and a magnetoresistant effect at low temperatures down to 0.4 K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2 DEG) in a tensile strained Si quantum well. The electron sheet density ($n_{s}$) of 1.5${\times}$$10^{12}$[$cm^{-2}$] and corresponding electron mobility of 14200 [$cm^2$$V^{-1}$$s^{-1}$] were obtained at low temperature of 0.4 K from Si/$Si_{1-x}Ge_{x}$ MOD quantum well structure with thermally grown oxide.

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