• Solar Energy
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• 제19권1호
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• pp.29-36
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• 1999

ZnO/n-Si junctions were fabricated by spin coating with ZnO precursor produced by the sol-gel process. In order to increase the electrical conductivity of ZnO films, the films were n-doped with Al impurity and subsequently annealed at about $450^{\circ}C$ under reducing environments. The ohmic contacts between n-Si and AI for a bottom electrode were successfully fabricated by doping the rear surface of Si substrate with phosphorous atoms. The front surface of the substrate was also doped with phosphorous atoms for improving the efficiency of the solar cells. Consequently, conversion efficiencies ranging up to about 5.3% were obtained. These efficiencies were found to decrease slowly with time because of the oxide films formed at the ZnO/Si interface upon oxygen penetration through the porous ZnO. Oxygen barrier layers could be necessary in order to prevent the reduction of conversion efficiencies.

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.254-260
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• 2014

Organic solar cells have attracted extensive attention as a promising approach for cost-effective photovoltaic devices. However, organic solar cell has disadvantage of low power conversion efficiency in comparison with other type of solar cell, due to the recombination ratio of hole and electron is too large in the active layer. Thus we have change the surface structure of PEDOT:PSS layers to improve the current density by colloidal lithography method using various-size of polystyrene sphere. The two types of coating method were applied to fabricate the different pattern shape and height, such as spin coating and drop casting. Using the organic solvent, we easily eliminate the PS sphere and could make the varied pattern shapes by controlling the wet etching time. Also we have measured the electrical properties of patterned PEDOT:PSS film to check whether it is suitable for organic photovoltaics.

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권3호
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• pp.53-57
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• 2001

The organic light-emitting devices (OLEDs) based on fluorescence have low efficiency due to the requirement of spin-symmetry conservation. By using the phosphorescent material, internal quantum efficiency can reach 100%, compared with 25% in the case of the fluorescent material. Thus, phosphorescent OLEDs have recently been extensively studied and shown higher internal quantum efficiency than the conventional OLEDs. In this study, we investigated the characteristics of the phosphorescent OLEDs with the green emitting phosphor, $Ir(ppy)_3$ (tris(2-phenylpyridine)iridium). The device with a structure of ITO/TPD$Ir(ppy)_3$ doped in BCP/BCP/$Alq_3$/Li:Al/Al was fabricated, and its electrical and optical characteristics were studied. By changing the doping concentration of $Ir(ppy)_3$, we fabricated several devices and investigated their characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제14권11호
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• pp.922-927
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• 2001

Single-layer green ELs was fabricated with using molecularly-dispersed Bu-PBD into poly-N-vinylcarbazole(PVK) which has low operating voltage and high quantum efficiency. A EL cell structure of glass substrate/indium-tin-oxide/PVK:Bu-PBD:C6(∼ 100nm)/Ca(20nm)/Al(20nm) was employed with variable doping concentration. The keys to obtain high quantum efficiency was excellent film forming capability of molecularly dispersed into PVK and appropriate combination of cathode for avoiding exciplex. We obtained the turn-on voltage of 4.2V and quantum efficiency of 0.52% at 0.lmol% of C6 concentration which has been improved about a factor of 50 in comparison with the undoped cell. The PL peak wavelengths wouldn\`t be turned by changing the concentration of the C6 dopant. Green EL emission peak and FWHM were 520nm and 70nm respectively. PL emission peak was obtained at 495nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.473-476
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• 2004

This study has investigated radiation degradation of low density polyethylene(LDPE). Samples were irradiated using a $Co^{60}\;\gamma-ray$ and ray up to 800 kGy at a dose rate of 5 kGy/hr in the presence of air atmosphere at room temperature. After irradiation, free radical measurement of LDPE has established by electron spin resonance(ESR). Then, each sample was stored for 2 weeks. ESR measurement showed that free radical concentration(FRC) was increased with radiation dose and changed from alkyl, allyl radical to peroxy radical with time.

• Bulletin of the Korean Chemical Society
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• 제13권4호
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• pp.419-425
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• 1992

Conducting polypyrrole doped with iron (Ⅱ,Ⅲ) hexacyanate Fe$(CN)_6^{z-}$ ions was studied for its physical and electrochemical properties. The polymer exhibited two pairs of waves in the cyclic voltammogram, one for the reversible oxidation/reduction of the incorporated iron hexacyanate ions and the other for the near-reversible oxidation/reduction of the polypyrrole moiety. The exchange of ions incorporated in the polymer and other ions present in solutions were examined by following the decrease of the reversible redox peaks of Fe$(CN)_6^{z-}$, and by EDX analysis. The spin density of this highly conducting polymer as probed by ESR spectroscopy was extremely low compared to polypyrrole doped with common anions.

• Journal of Integrative Natural Science
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• 제2권4호
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• pp.265-269
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• 2009

The photoluminescence was measured in GaAs-AlGaAs double-quantum-well structure at high magnetic field. Although the phototransition characteristics displayed a free-particle transition at low magnetic field, the change of free-particle transition into bound-exciton transition was observed at high magnetic field (above 10 T). A charged exciton formation due to charge-unbalanced electron-hole was identified by using a spin-polarized photoluminescence method. An increase of exciton formation due to the localization of free-particle at magnetic field was observed according to the increase of magnetic field.

• Journal of the Korean Magnetics Society
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• 제5권5호
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• pp.655-658
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• 1995

Magnetization behavior of sputter-deposited Co/Pd multilayers were characterized, and it has been found that even when the multilayers are sputtered at low pressure (10 mTorr), the coercivity of the multilayers can be increased to large extent without noticeable change of saturation magnetization by increasing the deposition pressure of Pd underlayer. It turned out that the surface topology of Pd underlayer gets rough as deposition pressure increases, which consequently affects the magnetization reversal mode of Co/Pd multilayers from domain wall motion to magnetic spin rotation. The enhancement of coercivity is attributed to the domain wall pinning effect which is comected with the surface roughness of Pd underlayer on which Co/Pd multilayers grow.

• Progress in Superconductivity
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• 제3권1호
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• pp.74-77
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• 2001

We have fabricated a high-Tc superconductive transistor with polyvinylidene fluoride (PVDF) gate electrode on MgO bicrystal Josephson junction by spin-coating method. The PVDF ferroelectric film is found to be suitable fur a gate electrode of the superconductive transistor since it has not only small leakage current but also high dieletric constant at low temperature. For the application of superconducting-FET, we investigated millimeter wave properties (60 GHz band) of the Josephson junction with PVDF gate electrode.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.109-109
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• 2003

III- V ferromagnetic semiconductor has attracted great attention as a potential application for spintronics due to a successful demonstration of spin injection from ferromagnetic GaNnAs into semiconductor. GaMnN may be one of the possible candidates for room temperature operation. Samples were grown on sapphire (0001) substrate at $650^{\circ}C$ via molecular beam epitaxy with a single Precursor of (Et$_2$Ga(N$_3$)NH$_2$$CH_3$) and solid source of Mn at different Mn source temperature. The background pressure is low 10$^{-10}$ Torr and the samples growth pressure was 1.4 $\times$ 10$^{-6}$ Torr.