• Journal of the Korean Society of Food Science and Nutrition
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• v.27 no.4
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• pp.675-681
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• 1998

Low density polyethlene(LDPE0 films of 50${\mu}{\textrm}{m}$ thickness were fabricated with addition of antimicrobial agents of Rheum palmatum extract, Coptis chinensis extract, sorbic acid and Ag-substitude inorganic zirconium matrix in 1% concentration. The films were compared in physical properties, tested in antimicrobial activity against some selected microorganisms on the agar plate medium and then applied for packaging fresh curled lettuce and cucumber to preserve their qualities. The films with Rheum palmatum extract, Coptis chinensis extract, and Ag-substituted inorganic zirconium matrix did not show any antimicrobial activity on the disk test against Escherichia coli, Staphylococcus aureus, Leuconostoc mesenteroides, Saccharomyces cerevisiae, Aspergillus niger, Aspergillus oryzae, Penicilluium chrysogenum, while film with sorbic acid did against E. coli, S. aureus and L. mesenteroides. The added antimicrobial agents changed the color and light transmittance of the films, but did not affect their mechanical tensile strength, heat shrinkage and wettability. For the packaged curled lettuce and cucumber stored at 5$^{\circ}C$ and 1$0^{\circ}C$, all the LDPE films impregnated with antimicrobial agents showed the reduced growth of total aerobic bacteria in the vegetables compared with control film without any additive until it reached the level around 108/g. They did not give any negative effect on other quality attributes during storage.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1598-1600
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$ The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ (<$200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC vanes with $T_f$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.213-213
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.510-515
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• 2001

It was first time that low frequency R.F. derived plasma enhanced MOCVD with frimethylborate precursor was used to fabricate a new ternary compound $BO_{x}$ $N_{y}$ . The formation of BON molecule was resulted from nitrogen nitrifying B-O, and forming the angular molecule structure proved by XPS and FT-IR results. The relationship between hardness and film thickness was studied. An thickness-independent hardness was fond about 10 GPa. The empirical calculation of band-gap and UV test result showed that our deposited $BO_{x}$ $N_{y}$ thin film was semiconductor material with 3.4eV of wide band gap. The electrical conductivity, $4.8$\times$10^{-2}$ /($\Omega$.cm)$^{-1}$ also confirmed that $BO_{x}$ $N_{y}$ has a semiconductor property. The roughness detected from the as-grown films showed that there was no serious bombarding effect due to anion in the plasma occurring in the RF frequency derived plasma.

• Korean Journal of Soil Science and Fertilizer
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• v.49 no.6
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• pp.789-794
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• 2016

Continuous excessive application of phosphorus (P) fertilizer and manure in plastic film house soils can lead to an accumulation of P in soils. The understanding of P sorption by soils is important for fertilizer management. In this study, 9 samples were collected for acidic and calcareous soils as non-cultivated soil and plastic film house soils as cultivated soil Phosphorus sorption data of acidic soils fit the Langmuir equations, Freundlich equations in calcareous and plastic film house soils. In calcareous and plastic film house soils, the slope of isotherm adsorption changed abruptly, which could be caused P precipitation with $CaCO_3$. The calculated Langmuir adsorption maximum ($S_{max}$) varied from 217 to 1,250, 139 to 1,429, and $714mg\;kg^{-1}$ for acidic soils, calcareous soils, and plastic film house soils with low available phosphate concentration, respectively. From this result, maximum P adsorption by the Langmuir equation could be regarded as threshold of P concentration to induce the phosphate precipitation in soil. Phosphate-sorption values estimated from one-point isotherm for acidic and calcareous soils as non-cultivated soils were comparable with the $S_{max}$ values calculated from the Langmuir isotherm.

• Journal of the Korea Institute of Building Construction
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• v.14 no.6
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• pp.583-590
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• 2014

The purpose of this study is to analyze and compare the life cycle cost of window glass with insulation film and regular glass, to verify an economical window construction method. As an approach method, the thermal performance data of each type of glass was measured using Window 6.3 and ECO2-OD Simulation Program, applied it to the case building to calculate the air conditioning and heating maintenance costs and LCC, and compared the economic feasibility. As a result, installing an additional insulation film prevents the solar heat penetration in the summer, so it reduces the cooling cost, on the other hand, it increased heating cost in winter. From the life cycle cost perspective, the effect of cooling cost reduction does not counterbalance the increase in heating cost and the additional cost from film installation and repair; therefore, the installation of insulation film may not be a proper method.

• Korean Journal of Weed Science
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• v.5 no.1
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• pp.19-23
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• 1985

Soil temperature was higher in clear or blue polyethylene film and bare soil than in black or green polyethylene film and straw mulching. Light transmission was low in black, blue or green colored polyethylene film and straw mulching. Germination of weeds was generally high under clear polyethylene film but black polyethylene film inhibited the germination. Germination of Portulaca oleracea, Setaria viridis and Amaranthus retroflexus increased under blue polyethylene film but inhibition of germination was observed in Erigeron canadensis, Avena fatua, Chenopodium ablum, Digitaria sanguinalis and Echinochloa crusgalli. Green polyethylene film mostly inhibited germination of weeds except A, fatua, C. album and E. canadensis. The greatest number of weeds emerged was obtained in clear polyethylene film, next in bare soil but green or blue polyethylene film inhibited the emergence of weeds. However, no emergence of weeds was observed under black polyethylene film. The highest dry weight of weeds was obtained in clear polyethylene film, next in bare soil, but green or blue polyethylene film and straw mulching caused suppression of weed growth. No weeds were grown under black polyethylene film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.355-358
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• 2011

As a II-IV compound semiconductor, ZnO has a wide band gap of 3.37 eV with transparent properties. Due to this transparent properties, ZnO materials can be also employed as the transparent conducting electrode materials. Recently, rapid progress has been made in the field of DSSC (dye sensitized solar cell)area. Therefore, strong demands have been required for the transparent electrodes with low temperature processing and cheap cost. In this paper, we will prepare ZnO thick films on the PET substrates for the electrode applications. We will investigate the structural and microstructure properties through the XRD, and SEM analysis, respectively. Also, we will study the electrical of specimens to apply the conducting electrode.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.77-82
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• 1995

PTCR(Positive Temperature Coefficient of Resistivity) thermistor in thin film BaTiO$_{3}$ system was prepared by using radio frequency(13.56 MHz) and DC magnetron sputter equipment. Polycrystalline, surface structure, and R-T(Resistivity-Temperature) characteristics of the specimens were measured by X-ray diffraction(D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M.JSM84 01, Japan), and insulation resistance measuring system (Keithley 719), respectively. Thin films characteristics of the thermistor showed different properties depending on the substrate even with the same sputtering condition. The thin film formed on the A1$_{2}$O$_{3}$ substrate showed a good crystalline and a low resistivity at below curie point. However, the thin films prepared on slide glass and Si wafer were amorphous. The thicknesses of the three samples prepared under the same process conditions were 700[.angs.], 637.75[.angs.], and 715[.angs.], respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.199-205
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• 2010

The crystallization speed (v) of amorphous (InTe)$_x$(GeTe) (x = 0.1, 0.3 and 0.5) films and their thermal, optical and electrical behaviors have been investigated using nano-pulse scanner (wavelength = 658 nm, laser beam diameter < 2 ${\mu}m$), X-ray diffraction (XRD), 4-point probe and UV-vis-IR spectrophotometer. These results were compared with those of $Ge_2Sb_2Te_5$ (GST) film, comprehensively utilized for phase-change random access memory (PRAM). Both v-value and thermal stability of (InTe)$_{0.1}$(GeTe) and (InTe)$_{0.3}$(GeTe) films could be enhanced in comparison with those of the GST. Contrarily, the v-value in the (InTe)$_{0.5}$(GeTe) film was so drastically deteriorated that we could not quantitatively evaluate it. This deterioration is thought because amorphous (InTe)$_{0.5}$(GeTe) film has relatively high reflectance, resulting in too low absorption to cause the crystallization. Conclusively, it could be thought that a proper compositional (InTe)$_x$(GeTe) films (e.g., x < 0.3) may be good candidates with both high crystallization speed and thermal stability for PRAM application.