• International Journal of Industrial Entomology and Biomaterials
• /
• v.40 no.1
• /
• pp.28-32
• /
• 2020

Recently, many studies have been undertaken on the wet spinning and electrospinning of silk because wet-spun fibers and electrospun webs of silk can be applied in the biomedical and cosmetic fields owing to the good biocompatibility of silk. The rheological properties of silk solution are important because they strongly affect the spinning performance of the silk solution and the structures of resultant fibrous materials. Therefore, as a preliminary study on the effect of solvent composition on the rheological properties of silk fibroin (SF) solution and structure of the resultant film, in the reported work, methanol was added to the SF formic acid solution. A small amount of methanol (i.e. 2%) added to the SF formic acid solution significantly altered the rheological properties of the solution: its shear viscosity increased by 10 folds at low shear and decreased on increasing the shear rate, demonstrating shear thinning behavior of the SF solution. Dynamic tests for the SF solution indicated that the addition of 2% methanol altered the viscous state of the SF formic acid solution to elastic. However, the molecular conformation (i.e. β-sheet conformation) of the regenerated SF film cast from formic acid remained unchanged on the addition of 2% methanol.

• Electrical & Electronic Materials
• /
• v.10 no.7
• /
• pp.706-712
• /
• 1997

AlN(Aluminium Nitride) thin films were prepared using by RF sputtering method on the Si(100) and Si(111) substrates as the parameters of the substrate temperature, RF power, sputtering duration and the $N_2$/Ar ratio and investigated by X-ray diffraction, IR spectrometry, n&k analyzer. For the Si(100) substrate, the AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. For the Si(111) substrate, the (002) AlN thin films were obtained under the nitrogen of 100 vol.%. In case of the thin film prepared in the condition of above 60 vol.% of the nitrogen, the average value of the surface roughness of the film was 151$\AA$. From the changes of the half widths of E$_1$[TO] phonon bands at the wavenumber of 680$cm^{-1}$ /, it were compared of the crystallinities of the films which were grown under the different conditions. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40~60 vol.%. Its due to the nitridation of the Al target surface and getting low of the sputtering yield by the $N_2$/Ar ratio being increased.

• Journal of the Korean Electrochemical Society
• /
• v.15 no.1
• /
• pp.19-26
• /
• 2012

SEI (solid electrolyte interphase) layers are generated on a graphite negative electrode from three different electrolytes and low-temperature ($-30^{\circ}C$) charge/discharge performance of the graphite electrode is examined. The electrolytes are prepared by adding 2 wt% of vinylene carbonate (VC) and fluoroethylene carbonate (FEC) into a standard electrolyte solution. The charge-discharge capacity of graphite electrode shows the following decreasing order; FEC-added one>standard>VC-added one. The polarization during a constant-current charging shows the reverse order. These observations illustrate that the SEI film resistance and charge transfer resistance differ according to the used additives. This feature has been confirmed by analyzing the chemical composition and thickness of three SEI layers. The SEI layer generated from the standard electrolyte is composed of polymeric carbon-oxygen species and the decomposition products ($Li_xPF_yO_z$) of lithium salt. The VC-derived surface film shows the largest resistance value even if the salt decomposition is not severe due to the presence of dense film comprising C-O species. The FEC-derived SEI layer shows the lowest resistance value as the C-O species are less populated and salt decomposition is not serious. In short, the FEC-added electrolyte generates the SEI layer of the smallest resistance to give the best low-temperature performance for the graphite negative electrode.

• Journal of information and communication convergence engineering
• /
• v.4 no.4
• /
• pp.158-161
• /
• 2006

[ $Bi_2Sr_2Ca_nCu_{n+1}O_y(n{\geq}0)$ ] thin film is fabricatedvia two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• Journal of the Korean Vacuum Society
• /
• v.10 no.3
• /
• pp.283-288
• /
• 2001

We have investigated aluminum cluster deposition using a classical molecular dynamics simulations. We studied the variations of the cluster momentum and the impulse force during collisions, and found that the close-packed cluster impact has some of properties of the single particle collision and the linear atomic chain collisions. We also simulated the series of energetic cluster deposition with energy Per atom. When energy Per atom in cluster has some eV rather than very low, the intermixing occurred easily in growth film and we can obtain a good film without subsequent annealing process.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.605-608
• /
• 2006

The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above $10^6$ are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80 %, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around $25\;cm^2/Vs$, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

• Proceedings of the KSME Conference
• /
• 2001.11a
• /
• pp.876-881
• /
• 2001

DLC(Diamond-like carbon) films possess high hardness, low friction coefficient, and good wear resistance. Due to these properties, DLC films have been used extensively in magnetic hard disk industry. The objective of the present study was to investigate the influence of environmental condition on the tribological behavior of DLC coated hard disk. It is found that the tribological characteristics of DLC films are strongly affected by relative humidity and temperature. Specifically, the friction coefficient increases with increase in temperature at relative humidity of 50%. However, at 20% and 85% RH the effect of temperature was not significant. Also, the degree of wear could be observed using an AFM.

• Journal of the Korean Vacuum Society
• /
• v.12 no.S1
• /
• pp.56-59
• /
• 2003

Wurtzite GaN films are grown by low-pressure MOCVD on (0001)-plane sapphire substrates. The GaN films have a total thickness of 4 $\mu$m with a surface Mg-doped p-type layer, which has a thickness of 0.5 $\mu$m. 90k eV $Mn^{+}$ ions are implanted into the GaN films at room temperature with doses ranging from $1 \times10^{15}$ to $1 \times 10^{16}\textrm{cm}^{-2}$. After an annealing step at $770^{\circ}C$ in flowing $N_2$, the structural characteristics of the $Mn^{+}$ implanted GaN films are studied by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and atomic force microscopy (AFM). The structural and morphological changes brought about by $Mn^{+}$ implantation and annealing are characterized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.10a
• /
• pp.40-44
• /
• 2000

$Bi_2Sr_2Ca_nCu_{n+1}O_y$($n{\geq}0$; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.9
• /
• pp.796-800
• /
• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO) thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.