• Tribology and Lubricants
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• v.32 no.4
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• pp.119-124
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• 2016

In the sapphire wafering process, lapping is a crucial operation in order to reduce the damaged layer and achieve the target thickness. Many parameters, such as pressure, velocity, abrasive, slurry and plate, affect lapping characteristics. This paper presents an experimental investigation on the effect of the plate groove on the material removal rate and roughness of the wafer. We select the spiral pattern and rectangular type as the groove shapes. We vary the groove density by controlling the groove shape dimension, i.e., the groove width and pitch. As the groove density increases to 0.4, the material removal rate increases and gradually reaches a saturation point. When the groove density is low, the pressing load is mostly supported by the thick film, and only a small amount acts on the abrasives resulting to a low material removal rate. The roughness decreases on increasing the groove density up to 0.3 because thick film makes partial participations of large abrasives which make deep scratches. From these results, we could conclude that the groove affects the contact condition between the wafer and plate. At the same groove density, the pitch has more influence on reducing the film thickness than the groove width. By decreasing the groove density with a smaller pitch and larger groove width, we could achieve a high material removal rate and low roughness. These results would be helpful in understanding the groove effects and determining the appropriate groove design.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.44-44
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• 1998

It was observed that the friction coefficient decreased with increasing Si concentration in the l ilms. Furthermore, the friction behavior became more s때ble even when very small amount of S Si of less than 0.5 at. % was incorporatA:회 By analyzing the composition of the debris f formed, we could show that the low and stabilized friction coefficient is in마nately relatA:었 w with the formation of the Si rich oxide debris. These result supports the mechanism that the h hydrated silica debris is the reason for low friction coefficient in humid environment. Second e evidence of the role of Si rich oxide debris could be found in the triOO-chemical reactions d during initial stage of triho-test. When the Si concen$\sigma$ation was less than 5 at.%, initial t transient period of high friction coefficient was commonly observed. Mter the transient period, m the friction coefficient becomes lower with increasing contact cycles. The initial $\sigma$ansient p peri여 becomes shorter and the starting and maximum friction coefficients in $\sigma$ansient 야,riod d decreased with increasing Si concentration. Composition of the debris on the wear scar s surface was analyzed by Auger spe따'Oscopy at v뼈ous stages in the initial transient period. W We observed that when the friction coefficient increased in earlier stage of the $\sigma$'ansient p period, iron and oxygen was observed in the debris. However, decrease in the 당iction c coefficient in the later stage of the transient period was associated with the formation of s silicon rich oxide debris. This result also supports the friction mechanism of Si-DLC films t that the formation of Si rich oxide debris results in low friction coefficient in ambient a atmosphere. atmosphere.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3579-3582
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• 2010

We studied the reaction of tri-methylaluminum (TMA) on hydroxyl (OH)-terminated Si (001) surfaces for the initial growth of aluminum oxide thin-films using density functional theory. TMA was adsorbed on the oxygen atom of OH due to the oxygen atom’s lone pair electrons. The adsorbed TMA reacted with the hydrogen atom of OH to produce a di-methylaluminum group (DMA) and methane with an energy barrier of 0.50 eV. Low energy barriers in the range of 0 - 0.11 eV were required for DMA migration to the inter-dimer, intra-dimer, and inter-row sites on the surface. A unimethylaluminum group (UMA) was generated at each site with low energy barriers in the range of 0.21 - 0.25 eV. Among the three sites, the inter-dimer site was the most probable for UMA formation.

• Korean Journal of Materials Research
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• v.17 no.1
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• pp.1-5
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• 2007

GaN thin fan were grown by spin coated colloidal GaOOH precursor. Polycrystalline GaNs with crystalline size of $10{\sim}100nm$ were grown on $SiO_2$ substrate. The shape of crystallite above $900^{\circ}C$ had the hexagonal plate and column type. X-ray diffraction patterns for them correspond to those of the hexagonal wurtzite GaN. With increasing droplets. i.e, thickness of deposited layers, XRD intensity increased. PL (photoluminescence) spectrum consisted with an weak near band-edge emission at 3.45 eV and a broad donor-acceptor emission band at 3.32 eV. From the low temperature PL measurement on GaN grown at $800^{\circ}C$ that the shallow donor-acceptor recombination induced emission was more intense than the near band-edge excitonic emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.4
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• pp.575-581
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• 2020

A colorless antistatic agent was prepared for use in antistatic films for liquid crystal displays (LCDs) requiring low surface resistance and high transmittance. Among various lithium-fluoro compounds and quaternary ammonium salts, antistatic materials were selected based on their electrical conductivity, and antistatic agents were prepared to measure the surface resistance. As a result, the material with high conductivity showed a relatively low surface resistance, i.e., relatively good antistatic performance. Based on the antistatic materials selected, the formulation ratio for producing the best antistatic agent was established through the experimental design method and the effects of each factor were analyzed. The higher the use of lithium- fluoro compounds as antistatic materials, the higher the ratio of oligomer use with multi-functional groups, and the smaller the surface resistance. The quaternary ammonium salts increased the antistatic performance of the lithium-fluoro compounds, but the effects of the amount used were not relatively large. After manufacturing the antistatic PET film, the properties of the antistatic film showed low surface resistance values (<10⁹ Ω/sq.), high permeability (>92%), low haze (<0.5%), and high whiteness (L^⁎>95). In addition, the antistatic film reliability was found to be excellent by showing a stable surface-resistance change rate of less than 10%, even under high temperature and high humidity conditions.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.6
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• pp.1169-1174
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• 2011

CdTe thin-film solar cell technology is well known that it can theoretically improve its conversion efficiency and manufacturing costs compared to the conventional silicon solar cell technology, due to its optical band gap energy (about 1.45eV) for solar energy absorption, high light absorption capability and low cost requirements for producing solar cells. Although the prior studies obtained the high light absorption, CdTe thin film solar cell has not been come up to the sufficient efficiency yet. So, doping method was selected for the improvement of the electrical characteristics in CdTe solar cells. Some elements including Cu, Ag, Cd and Te were generally used for the p-dopant as substitutional acceptors in CdTe thin film. In this study, the sputtering-deposited CdTe thin film was immersed in $AgNO_3$ solution for ion exchange method to dope Ag ions. The effects of immersion temperature and Ag-concentration were investigated on the optical properties and electrical characteristics of CdTe thin film by using Auger electron spectroscopy depth-profile, UV-visible spectrophotometer, and a Hall effect measurement system. The best optical and electrical characteristics were sucessfully obtained by Ag doping at high temperature and concentration. The larger and more uniform diffusion of Ag ions made increase of the Ag ion density in CdTe thin film to decrease the series resistance as well as mede the faster diffusion of light by the metal ions to enhance the light absorption.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.471.2-471.2
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• 2014

We demonstrate here that an improvement in precursor film density (green density) leads to a great enhancement in the photovoltaic performance of CuInSe2 (CISe) thin film solar cells fabricated with Cu-In nanoparticle precursor films via chemical solution deposition. A cold-isostatic pressing (CIP) technique was applied to uniformly compress the precursor film over the entire surface (measuring 3~4 cm2) and was found to increase its relative density (particle packing density) by ca. 20%, which resulted in an appreciable improvement in the microstructural features of the sintered CISe film in terms of lower porosity, reduced grain boundaries, and a more uniform surface morphology. The low-bandgap (Eg=1.0 eV) CISe PV devices with the CIP-treated film exhibited greatly enhanced open-circuit voltage (VOC, from 0.265 V to 0.413 V) and fill factor (FF, from 0.34 to 0.55), as compared to the control devices. As a consequence, an almost 3-fold increase in the average power conversion efficiency, 3.0 to 8.2% (with the highest value of 9.02%), was realized without an anti-reflection coating. A diode analysis revealed that the enhanced VOC and FF were essentially attributed to the reduced reverse saturation current density (j0) and diode ideality factor (n). This is associated with the suppressed recombination, likely due to the reduction in recombination sites such as grain/air surfaces (pores), inter-granular interfaces, and defective CISe/CdS junctions in the CIP-treated device. From the temperature dependences of VOC, it was confirmed that the CIP-treated devices suffer less from interface recombination.

• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.147-157
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• 1994

Valence or core electron excitations induced by Synchrotron radiation (SR) irradiation and ensuing chemical reactions can be applied for semiconductor processes i, e, deposition etching and modifications of thin film materials. Unique selectivity can be achieved by this photochemical reactions in deposition and etching. Some materials can be ecvaporated by SR irradiation which can be utilized for low temperature surface cleaning of thin films. Also SR irradiation significantly lowers the reaction temperature and photon activated surface reactions can be utilized for direct writing or projection lithography of electronic materials. This technique is especially effective in making nanoscale feature size with abrupt and well defined interfaces for next generation electronic devices.

• Tribology and Lubricants
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• v.31 no.6
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• pp.245-250
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• 2015

This study investigates the lubrication characteristics of fuel injection pumps with reference to different fuel oils. Medium-speed diesel engines use fuel oils with various viscosities, such as heavy fuel oil (HFO, which is a high-viscosity fuel oil) and light diesel oil (LDO, which is a low-viscosity fuel oil). When fuel oil with a low viscosity is used, both fuel oil and lubricating oil lubricate the system. Thus, the lubrication of the fuel injection pump is in a multi-viscosity condition when the fuel oil in use changes. We suggest three cases of multi-viscosity models, and divide the fuel injection pump into three lubrication sections: a, the new oil section; b, the mixed oil section; and c, the used oil section. This study compares the lubrication characteristics with variation of the multi-viscosity model, clearance. The volume of Section b does not affect the lubrication characteristics. The lubrication characteristics of the fuel injection pump are poor when high-viscosity fuel oil transfers to low-viscosity fuel oil. This occurs because the viscosity in the new oil section (i.e., Section a) dominates the lubrication characteristics of the fuel injection pump. However, the lubricant oil supply in the used oil section (i.e., Section c) can improve the lubrication characteristics in this condition. Moreover, the clearances of the stem and head significantly influence the lubrication characteristics when the fuel oil changes.