• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.160-166
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• 1998

The field emission characteristics of defective diamond films grown by microwave plasma enhanced chemical vapor deposition (MPECVD) have been studied. X-ray diffraction, the poor crystal quality and/or small grain sizes of the diamond phase and the inclusion of the non-diamond carbon phases in these films have been condirmed by raman spectroscopy, scanning electron microscopy, atomic force microscopy, and the reflectance measurements. The degrees of the film defectiveness and the emission characteristics were dependent on the methane concentration. Current-versus-voltage measurements have demonstrated that the defective diamond films have good electron emission characteristics. characteristics strongly suggests the defect-related electron-emission mechanism. The defective diamond films deposited on Si substrates show the field emission current density of 1$\mu\textrm{A}/\textrm{cm}^2$ and 1mA/$\textrm{cm}^2$ have been measured at electric fields as low as 4.5V/$\mu\textrm{m}$ and 7.6V/$\mu\textrm{m}$, respectively. We also observed the similar emission characteristics from the defective diamond film deposited on Cr/Si substrate and could decrease the deposition temperature to $600^{\circ}C$.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.199-203
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• 2010

Hybridization of semiconductor materials with carbon nanotubes (CNTs) is a recent field of interest in which new nanodevice fabrication and applications are expected. In this work, nanowire type GaAs structures are synthesized on porous single-wall carbon nanotubes (SWCNTs) as templates using the molecular beam epitaxy (MBE) technique. The field emission properties of the as-synthesized products were investigated to suggest their potential applications as cold electron sources, as well. The SWCNT template was synthesized by the arc-discharge method. SWCNT samples were heat-treated at $400^{\circ}C$ under an $N_2/O_2$ atmosphere to remove amorphous carbon. After heat treatment, GaAs was grown on the SWCNT template. The growth conditions of the GaAs in the MBE system were set by changing the growth temperatures from $400^{\circ}C$ to $600^{\circ}C$. The morphology of the GaAs synthesized on the SWCNTs strongly depends on the substrate temperature. Namely, nano-crystalline beads of GaAs are formed on the CNTs under $500^{\circ}C$, while nanowire structures begin to form on the beads above $600^{\circ}C$. The crystal qualities of GaAs and SWCNT were examined by X-ray diffraction and Raman spectra. The field emission properties of the synthesized GaAs nanowires were also investigated and a low turn-on field of $2.0\;V/{\mu}m$ was achieved. But, the turn-on field was increased in the second and third measurements. It is thought that arsenic atoms were evaporated during the measurement of the field emission.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.110-115
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• 2000

Deposition conditions of diamond thin films were optimized using hot-filament chemical vapor deposition (HFCVD). Boron-doped diamond thin films with varying boron densities were then fabricated using B4C solid pellets. Current-voltage responses and field emission currents were measured to test the characteristics of field emission display (FED). With the increase of boron doping, the crystal size of diamond decreased slightly, but its quality was not changed significantly in case of small doping. The I-V characterization was performed for Al/diamond/p-Si, and the current of doped diamond film was increased $10^4\sim10^5$ times as compared with that of undoped film. In the field emission properties, the electrons were emitted with low electric field with the increase of doping, while the emission current increased. The onset-field of electron emission was 15.5 V/$\mu\textrm{m}$ for 2 pellets, 13.6 V/$\mu\textrm{m}$ for 3 pellets and 11.1 V/$\mu\textrm{m}$ for 4 pellets. With the incorporation of boron, the slope of Fowler-Nordheim graph was decreased, revealing that the electron emission behavior was improved with the decrease of the effective barrier energy.

• Journal of Magnetics
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• v.11 no.4
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• pp.195-207
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• 2006

The recently published and new results on design and fabrication of magnetophotonic crystals of different dimensionality are surveyed. Coupling of polarized light to 3D photonic crystals based on synthetic opals was studied in the case of low dielectric contrast. Transmissivity of opals was demonstrated to strongly depend on the propagation direction of light and its polarization. It was shown that in a vicinity of the frequency of a single Bragg resonance in a 3D photonic crystal the incident linearly polarized light excites inside the crystal the TE- and TM-eigen modes which passing through the crystal is influenced by Brags diffraction of electromagnetic field from different (hkl) sets of crystallographic planes. We also measured the faraday effect of opals immersed in a magneto-optically active liquid. It was shown that the behavior of the faraday rotation spectrum of the system of the opal sample and magneto-optically active liquid directly interrelates with transmittance anisotropy of the opal sample. The photonic band structure, transmittance and Faraday rotation of the light in three-dimensional magnetophotonic crystals of simple cubic and face centered cubic lattices formed from magneto-optically active spheres where studied by the layer Korringa-Kohn-Rostoker method. We found that a photonic band structure is most significantly altered by the magneto-optical activity of spheres for the high-symmetry directions where the degeneracies between TE and TM polarized modes for the corresponding non-magnetic photonic crystals exist. The significant enhancement of the Faraday rotation appears for these directions in the proximity of the band edges, because of the slowing down of the light. New approaches for one-dimensional magnetophotonic crystals fabrication optimized for the magneto-optical Faraday effect enhancement are proposed and realized. One-dimensional magnetophotonic crystals utilizing the second and the third photonic band gaps optimized for the Faraday effect enhancement have been successfully fabricated. Additionally, magnetophotonic crystals consist of a stack of ferrimagnetic Bi-substituted yttrium-iron garnet layers alternated with dielectric silicon oxide layers of the same optical thickness. High refractive index difference provides the strong spatial localization of the electromagnetic field with the wavelength corresponding to the long-wavelength edge of the photonic band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.53-54
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• 2008

We have studied electro-optic characteristics as a function of passivation thickness$(t_p)$ in the fringe-field swiching (FFS) mode using the LC with positive dielectric anisotropy. When $t_p$ is increased from $0.29{\mu}m$ to $3.0{\mu}m$, a maximum transmittance is slightly increased to $2{\mu}m$. However, operating voltage is continuously increased up to above 11v. We found that the tilt angle is decreased between the edge of pixel electrode and the center of each pixel electrode. In the FFS mode using the liquid crystal with positive dielectric anisotropy, transmittance is affected by the tilt angle. When tilt angle is increased, transmittance become decrease. Therefore, in the FFS device, a low tilt angle is favored for high transmittance. It is demonstrated that the suitable passivation thickness make a tilt angle decreased.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.205-207
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• 2008

The new process for hybrid silicon thin film transistor (TFT) using DPSS laser has been developed for realizing both low-temperature poly-Si (LTPS) TFT and a-Si:H TFT on the same substrate as a backplane of active matrix liquid crystal display. LTPS TFTs are integrated on the peripheral area of the panel for gate driver integrated circuit and a-Si:H TFTs are used as a switching device for pixel in the active area. The technology has been developed based on the current a-Si:H TFT fabrication process without introducing ion-doping and activation process and the field effect mobility of $4{\sim}5\;cm^2/V{\cdot}s$ and $0.5\;cm^2/V{\cdot}s$ for each TFT was obtained. The low power consumption, high reliability, and low photosensitivity are realized compared with amorphous silicon gate driver circuit and are demonstrated on the 14.1 inch WXGA+ ($1440{\times}900$) LCD Panel.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.120-126
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• 2000

This paper dealt with the developed portable electric field meter which consisted of planar-type sensor, analog amplifier with gain controller, A/D convertor, and display unit. The principle of the planar-type sensor for detecting time-varying electric field of extremely low frequency (ELF) bandwidth was described, and a calibration system using cylindrical guard electrodes and parallel-plate electrodes was proposed. From the calibration experiment, the frequency bandwidth and the sensitivity of the developed electric field meter was $17[Hz]{\sim}7[kHz]$, and 4.45[mV/V/m], respectively. Also it can measure the electric field strength up to 10[kV/m], and the measured result was displayed on the liquid crystal display in digit. The electric field meter can be widely applied to measure electric field strength radiated from power lines, computers, and home appliances such as hair dryer, heater, etc.

• Applied Chemistry for Engineering
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• v.30 no.2
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• pp.205-211
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• 2019

Over the past several decades, the polymer dispersed liquid crystal (PDLC) has received particular attention as a material for developing smart window due to their electro-optical switchable properties. In this study, PDLC cells were fabricated using acrylate monomers, namely 2-hydroxyethyl acrylate (2-HEA) and ethylene glycol phenyl ether acrylate (EGPA), and the effect of the monomer composition on their electro-optical properties was investigated. The monomer mixture with a low viscosity (~10 cps) was easily filled between indium tin oxide (ITO) glasses by capillary action at room temperature. PDLC cells prepared using the mixture ratio of 1 : 9 (2-HEA : EGPA) did not show a complete opaque state at a 0 V condition but exhibited unstable electro-optical properties under an electric field. As the LC composition increased in the reaction mixture for PDLC cell preparation, the $V_{th}$ (threshold voltage) and $V_{sat}$ (saturation voltage) values as well as contrast ratio (CR) increased. $V_{th}$ and $V_{sat}$ values also increased with the cell gap thickness. PDLC cells with a $20{\mu}m$ cell gap thickness exhibited higher CR than those with 10 and $40{\mu}m$ cell gap thicknesses. Particularly, PDLC cells prepared using the mixture ratio of 7 : 3 (2-HEA : EGPA) showed excellent electro-optical properties such as a low driving voltage and high contrast ratio.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.4
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• pp.160-165
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• 2015

Lead-free piezoelectric materials have been actively studied to substitute for conventional PZT based solid solution, $Pb(Zr_xTi_{1-x}O_3)$, which occurs unavoidable PbO during the sintering process. Among them, Bismuth Sodium Titanate, $Na_{0.5}Bi_{0.5}TiO_3$ (abbreviated as NBT) based solid solution is attracted for the one of excellent candidates which shows the strong ferroelectricity, Curie temperature (Tc), remnant polarization (Pr) and coercive field (Ec). Especially, the solid solution of rhombohedral phase NBT with tetragonal perovskite phase has a rhombohedral - tetragonal morphotropic phase boundary. Modified NBT with tetragonal perovskite at the region of MPB can be applied for high frequency ultrasonic application because of not only its low permittivity, high electrocoupling factor and high mechanical strength, but also effective piezoelectric activity by poling. In this study, solid state ceramic processing of NBT and modified NBT, $(Na_{0.5}Bi_{0.5})_{0.93}Ba_{0.7}TiO_3$ (abbreviated as NBT-7BT), at the region of MPB using 7 % $BaTiO_3$ as a tetragonal perovskite was introduced and the structure between NBT and NBT-7BT were analyzed using rietveld refinement. Also, the ferroelectric and piezoelectric properties of NBT-7BT such as permittivity, piezoelectric constant, polarization hysteresis and strain hysteresis loop were compared with those of pure NBT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.186-186
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• 2009

Most liquid crystal display modes, including the twisted nematic (TN) $mode^1$, the in-plane switching (IPS) $mode^2$, the fringe field switching (FFS) $mode^3$, and the vertically aligned (VA) $mode^4$ are based on either a horizontal or a vertical alignment. However, for some applications, such as no-bias-bend (NBB) pi cell or bistable bend-splay display, an intermediate pretilt angle is essential$^5$. NBB pi cells have been a focus of interest because of their fast response time; however, the reliable control of the intermediate pretilt angle of liquid crystals that is required for the fabrication of NBB pi cells is challenging. The controllable pre-tilt angle of liquid crystals was investigated using a blend of horizontal and vertical polyimide prepared by a rubbing method. Various pretilt angles in the range from 0^{\circ}$ to 90^{\circ}$ were achieved as a function of the vertical polyimide content. We observed uniform liquid crystal alignment on the rubbing-treated blended polyimide layer. A NBB pi cell with an intermediate pretilt angle of 47.8^{\circ}$ was manufactured. This cell had no initial bias voltage and a low threshold voltage, which indicates that it has low power consumption. In addition, the response time of the NBB pi cell was rapid.