• Title/Summary/Keyword: Low-Energy Photon

Search Result 127, Processing Time 0.025 seconds

Optimization of Energy Modulation Filter for Dual Energy CBCT Using Geant4 Monte-Carlo Simulation

  • Ju, Eun Bin;Ahn, So Hyun;Choi, Sang Gyu;Lee, Rena
    • Progress in Medical Physics
    • /
    • v.27 no.3
    • /
    • pp.125-130
    • /
    • 2016
  • Dual energy computed tomography (DECT) is used to classify two materials and quantify the mass density of each material in the human body. An energy modulation filter based DECT could acquire two images, which are generated by the low- and high-energy photon spectra, in one scan, with one tube and detector. In the case of DECT using the energy modulation filter, the filter should perform the optimization process for the type of materials and thicknesses for generating two photon spectra. In this study, Geant4 Monte-Carlo simulation toolkit was used to execute the optimization process for determining the property of the energy modulation filter. In the process, various materials used for the energy modulation filter are copper (Cu, $8.96g/cm^3$), niobium (Nb, $8.57g/cm^3$), stannum (Sn, $7.31g/cm^3$), gold (Au, $19.32g/cm^3$), and lead (Pb, $11.34g/cm^3$). The thickness of the modulation filter varied from 0.1 mm to 1.0 mm. To evaluate the overlap region of the low- and high-energy spectrum, Geant4 Monte-Carlo simulation is used. The variation of the photon flux and the mean energy of photon spectrum that passes through the energy modulation filter are evaluated. In the primary photon spectrum of 80 kVp, the optimal modulation filter is a 0.1 mm lead filter that can acquire the same mean energy of 140 kVp photon spectrum. The lead filter of 0.1 mm based dual energy CBCT is required to increase the tube current 4.37 times than the original tube current owing to the 77.1% attenuation in the filter.

Numerical optimization of transmission bremsstrahlung target for intense pulsed electron beam

  • Yu, Xiao;Shen, Jie;Zhang, Shijian;Zhang, Jie;Zhang, Nan;Egorov, Ivan Sergeevich;Yan, Sha;Tan, Chang;Remnev, Gennady Efimovich;Le, Xiaoyun
    • Nuclear Engineering and Technology
    • /
    • v.54 no.2
    • /
    • pp.666-673
    • /
    • 2022
  • The optimization of a transmission type bremsstrahlung conversion target was carried out with Monte Carlo code FLUKA for intense pulsed electron beams with electron energy of several hundred keV for maximum photon fluence. The photon emission intensity from electrons with energy ranging from 300 keV to 1 MeV on tungsten, tantalum and molybdenum targets was calculated with varied target thicknesses. The research revealed that higher target material element number and electron energy leads to increased photon fluence. For a certain target material, the target thickness with maximum photon emission fluence exhibits a linear relationship with the electron energy. With certain electron energy and target material, the thickness of the target plays a dominant role in increasing the transmission photon intensity, with small target thickness the photon flux is largely restricted by low energy loss of electrons for photon generation while thick targets may impose extra absorption for the generated photons. The spatial distribution of bremsstrahlung photon density was analyzed and the optimal target thicknesses for maximum bremsstrahlung photon fluence were derived versus electron energy on three target materials for a quick determination of optimal target design.

실리콘 박막 태양전지를 위한 CdSe계 양자점 광변환구조체

  • Sin, Myeong-Hun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.135.2-135.2
    • /
    • 2014
  • Photon conversion technology for thin film solar cells is reviewed. The high-energy photons which are hardly absorbed in solar cells can be transformed the low energy photon by the photon conversion process such as down conversion or down shift, which can improve the solar cell efficiency over the material limit. CdSe-based quantum dot materials commonly used in LED can be used as the photon conversion layer for Si thin film solar cells. The photon conversion structure of CdSe-based quantum dot for Si thin film solar cells will be presented and the pros and cons for the Si thin film solar cells integrated with the photon conversion layers will be discussed.

  • PDF

Photon-Counting Detector CT: Key Points Radiologists Should Know

  • Andrea Esquivel;Andrea Ferrero;Achille Mileto;Francis Baffour;Kelly Horst;Prabhakar Shantha Rajiah;Akitoshi Inoue;Shuai Leng;Cynthia McCollough;Joel G. Fletcher
    • Korean Journal of Radiology
    • /
    • v.23 no.9
    • /
    • pp.854-865
    • /
    • 2022
  • Photon-counting detector (PCD) CT is a new CT technology utilizing a direct conversion X-ray detector, where incident X-ray photon energies are directly recorded as electronical signals. The design of the photon-counting detector itself facilitates improvements in spatial resolution (via smaller detector pixel design) and iodine signal (via count weighting) while still permitting multi-energy imaging. PCD-CT can eliminate electronic noise and reduce artifacts due to the use of energy thresholds. Improved dose efficiency is important for low dose CT and pediatric imaging. The ultra-high spatial resolution of PCD-CT design permits lower dose scanning for all body regions and is particularly helpful in identifying important imaging findings in thoracic and musculoskeletal CT. Improved iodine signal may be helpful for low contrast tasks in abdominal imaging. Virtual monoenergetic images and material classification will assist with numerous diagnostic tasks in abdominal, musculoskeletal, and cardiovascular imaging. Dual-source PCD-CT permits multi-energy CT images of the heart and coronary arteries at high temporal resolution. In this special review article, we review the clinical benefits of this technology across a wide variety of radiological subspecialties.

A Study on the Photon Energy Characteristics of ZnO Thin Film According to Coating Thickness (ZnO 박막의 증착 두께에 따른 Photon Energy 특성에 관한 연구)

  • Lee, Jung-Il;Seo, Jang-Soo;Jung, Sung-Gyo;Kim, Byung-In
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.05b
    • /
    • pp.75-81
    • /
    • 2003
  • This study evaporates ZnO layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1{\varepsilon}_2)$ has larger peak values as it’s thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

  • PDF

The Photon Energy Characteristics of ZnO Thin Film Fabricated by RF Sputtering (RF Sputtering으로 제작한 ZnO 박막의 Photon Energy 특성)

  • Kim, Byung-In;Kim, Won-Bae;Chung, Seong-Gyo;Kim, Duck-Tae;Choi, Young-Il;Kim, Hyung-Gon;Song, Chan-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.08a
    • /
    • pp.73-79
    • /
    • 2002
  • This study evaporates ZnO layer thickness' differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1,{\varepsilon}_2)$ has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

  • PDF

Investigation of gamma radiation shielding properties of polyethylene glycol in the energy range from 8.67 to 23.19 keV

  • Akhdar, H.;Marashdeh, M.W.;AlAqeel, M.
    • Nuclear Engineering and Technology
    • /
    • v.54 no.2
    • /
    • pp.701-708
    • /
    • 2022
  • The mass attenuation coefficients (μm) of polyethylene glycol (PEG) of different molecular weights (1000-200,000) were measured using single-beam photon transmission. The X-ray fluorescent (XRF) photons from Zinc (Zn), Zirconium (Zr), Molybdenum (Mo), Silver (Ag) and Cadmium (Cd) targets were used to determine the attenuation of gamma radiation of energy range between 8.67 and 23.19 keV in PEG samples. The results were compared to theoretical values using XCOM and Monte Carlo simulation using Geant4 toolkit which was developed to validate the experiment at those certain energies. The mass attenuation coefficients were then used to compute the effective atomic numbers, electron density and half value layers for the studied samples. The outcomes showed good agreement between experimental and simulated results with those calculated theoretically by XCOM within 5% deviation. The PEG 1000 sample showed slightly higher μm value compared with the other samples. The dependence of the photon energy and PEG composition on the values of μm and HVL were investigated and discussed. In addition, the values of Zeff and Neff for all PEG samples behaved similarly in the given photon energy range, and they decreased as the photon energy increased.

Enhance photoelectric efficiency of PV by optical-thermal management of nanofilm reflector

  • Liang, Huaxu;Wang, Baisheng;Su, Ronghua;Zhang, Ao;Wang, Fuqiang;Shuai, Yong
    • Advances in nano research
    • /
    • v.13 no.5
    • /
    • pp.475-485
    • /
    • 2022
  • Crystalline silicon photovoltaic cells have advantages of zero pollution, large scale and high reliability. A major challenge is that sunlight wavelength with photon energy lower than semiconductor band gap is converted into heat and increase its temperature and reduce its conversion efficiency. Traditional cooling PV method is using water flowing below the modules to cool down PV temperature. In this paper, the idea is proposed to reduce the temperature of the module and improve the energy conversion efficiency of the module through the modulation of the solar spectrum. A spectrally selective nanofilm reflector located directly on the surface of PV is designed, which can reflect sunlight wavelength with low photon energy, and even enhance absorption of sunlight wavelength with high photon energy. The results indicate that nanofilm reflector can reduce spectral reflectivity integral from 9.0% to 6.93% in 400~1100 nm wavelength range, and improve spectral reflectivity integral from 23.1% to 78.34% in long wavelength range. The nanofilm reflector can reduce temperature of PV by 4.51℃ and relatively improved energy conversion efficiency of PV by 1.25% when solar irradiance is 1000 W/m2. Furthermore, the nanofilm reflector is insensitive in sunlight's angle and polarization state, and be suitable for high irradiance environment.

The Application of a Laser to the Chemical Characterization of Radionuclides

  • Park, Y.J.;Park, K.K.;M/Y. Suh;S.K. Yoon;Park, Y.S.;Kim, D.Y.;Kim, W.H.
    • Nuclear Engineering and Technology
    • /
    • v.32 no.5
    • /
    • pp.446-456
    • /
    • 2000
  • Laser induced photoacoustic, fluorescence, and photon correlation spectroscopies were applied to the chemical characterization of radionuclides in connection with the radiowaste treatment and disposal. Their measuring principles and systems were briefly described together with their advantages over conventional spectroscopies. Also, other applications of lasers are introduced. Laser induced photoacoustic spectra were measured for a P $r^{3+}$ solution with a very low molar absorptivity. The detection sensitivity was 4.3 $\times$10$^{-5}$ c $m^{1}$ and was 100 times better than that of a UV/VIS spectrophotometer. The Eu(III) excitation spectra($^{7}$ $F_{0}$ longrightarrow $^{5}$ $D_{0}$ transition) were measured for Eu(III)-phthalate complexes using laser fluorescence spectroscopy, showing that only two species, 1:1 and 1:2 complexes, are present in the Eu(III)-phthalic acid system. The size and size distribution for colloidal humic acids and Eu(III)-humate colloids was determined using photon correlation spectroscopy. The presence of Eu(III) enhanced the aggregation of humic acids.s.

  • PDF