• The Korean Journal of Pain
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• 제2권2호
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• pp.145-154
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• 1989

Pain is a common and important clinical symptom, and treatments aimed at relieving pain have a central position in medical practice. Recently Transcutaneous Electrical Nerve Stimulation (TENS) has been effectively used to control acute and chronic conditions that produce pain. But the mechanism of analgesia resulting from TENS remains obscure. In order to investigate the analgesic effect of TENS and it's action mechanism, TENS was applied in 40 rabbits with different frequencies, low frequency (2Hz) and high frequency (100Hz), for 20 minutes. And the pain threshold was measured by the temperature before and after stimulation, and an attempt was made to antagonize the stimulation effect with naloxone pretreatment (0.4 mg/kg) The results are as follows: 1) Both low frequency and high frequency TENS resulted in increasing the pain threshold significantly (Both p<0.01). 2) Naloxone pretreatment could antagonize the effect of increasing the pain threshold with low frequency TENS significantly (p<0.01), but not with high frequency TENS. Plasma beta-endorphin was measured by radioimmunoassay using an Beta-Endorphin Kit (Immunonuclear Corporation, Stillwater, Minnesota, USA) and Automatic Gamma Scintillation Counter (Micromedic System 4/2000) before and after stimulation. An attempt was made to reverse the stimulation effect with naloxone pretreatment (0.4 mg/kg). The results are as follows: 1) Low frequency TENS resulted in increasing the level of plasma beta.endorphin significantly (p<0.01), but high frequency TENS did not. 2) Naloxone pretreatment could reverse the effect of increasing the plasma beta-endorphin level with low frequency TENS significantly (p<0.01).

• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.821-825
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• 한국해양공학회:학술대회논문집
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• 한국해양공학회 2002년도 추계학술대회 논문집
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• pp.359-365
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• 2002

The fatigue crack growth behavior of the SA516/60 steel which is used for pressure vessels was examined experimentally at room temperature $25^{\circ}C,\;-30^{\circ}C,\;-60^{\circ}C,\;-80^{\circ}C,\;-100^{\circ}C$ and $-120^{\circ}C$ with stress ratio of R=0.05, 0.1 and 0.3. Fatigue crack propagation rate da/dN related with stress intensity factor range ${\Delta}K$ was influenced by stress ratio in stable of fatigue crack growth (Region II) with an increase in ${\Delta}K$. The resistance of fatigue crack growth at low temperature is higher compared with that at room temperature, which is attributed to tile extent of plasticity-induced by compressive residual stress according to the cyclic loads. Fractographic examinations reveal that the differences of the fatigue crack growth characteristics between room and low temperatures are mainly explained by the crack closure and the strengthening due to the plasticity induced and roughness induced.

• 한국식품조리과학회지
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• 제14권4호
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• pp.367-374
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• 1998

The purpose of this study was to evaluate the microbiological quality of, and to assure the hygienic safety of, the kimbap production in the university foodservice facilities in accordance with the HACCP (Hazard Analysis Critical Control Point) Program. The time-temperature relationship and the microbiological quality (specifically, total plate count and coliform bacteria count) were assessed to find the critical control point (CCP) during each of the production phases. The average of the daily longest duration time of the kimbap at the facilities was 23.4 hours in summer, while 29.6 hours in winter. In the purchasing phase of the raw materials, the microbiological quality of laver, fish paste, carrot and cucumber in summer was not at an acceptable level according to the standard set by the Natick research center, especially the number of TPC and the coliform level of laver was higher than the threshold level. In the refrigerator storage phase, the temperature of the carrot was 7.4$^{\circ}C$. This temperature is far exceeding the standard so that the microbiological counts was increased by the 2 log cycle during the average storage time of 17 hours or more. In the preparation phase, the temperature of the blanching is too low compared to the standard. In the holding phase before serving, its time-temperature relationship was out of the FDA food code standard both in winter and summer. In the sewing phase, the number of microbiological count was higher than the threshold level in summer while that in winter was up to standard. According to the Harrigan and McCance standard, the number of microbiological count of the utensils was higher than the threshold level in summer while that in winter was up to standard.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.747-750
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• 2005

In this paper, we propose a new level shifter circuit for reducing power consumption. The concept of the proposed level shifter is to use capacitive coupling effect to reduce short circuit current. The power consumption of the proposed level shifter is reduced up to 50%, compared to the conventional level shifter. Especially the proposed level shifter circuit works well with low temperature poly-Si (LTPS) TFTs. It can operate on low input voltage even with low-mobility, high and widely-varying threshold voltage of LTPS TFT.

• 한국안전학회지
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• 제16권1호
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• pp.18-24
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• 2001

The fatigue crack growth behavior of the SA516/70 steel which is used for pressure vessels was examined experimentally at room temperature, $-60^{\circ}C$,$-80^{\circ}C$ and $-100^{\circ}C$ with stress ratio of R=0.05, 0.1 and 0.3. Fatigue crack propagation rate da/dN related with stress intensity factor range ${\Delta}K$ was influenced by stress ratio in stable of fatigue crack growth (Region II) with an increase in ${\Delta}K$. The resistance of fatigue crack growth at low temperature is higher compared with that at room temperature, which is attributed to the extent of plasticity-induced by compressive residual stress according to the cyclic loads. Fractographic examinations reveal that the differences of the fatigue crack growth characteristics between room and low temperatures are mainly explained by the crack closure and the strengthening due to the plasticity induced and roughness induced.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2001년도 추계학술대회 논문집(Proceeding of the KOSME 2001 Autumn Annual Meeting)
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• pp.80-87
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• 2001

The fatigue crack growth behavior of the SA516/60 steel which is used for pressure vessels was examined experimentally at room temperature $25^{\circ}C, -30^{\circ}C, -60^{\circ}C, -80^{\circ}C, -100^{\circ}C$ and -l2$0^{\circ}C$ with stress ratio of R=0.05, 0.1 and 0.3. Fatigue crack propagation rate da/dN related with stress intensity factor range ΔK was influenced by stress ratio in stable of fatigue crack growth (Region II) with an increase in ΔK. The resistance of fatigue crack growth at low temperature is higher compared with that at room temperature, which is attributed to the extent of plasticity-induced by compressive residual stress according to the cyclic loads. Fractographic examinations reveal that the differences of the fatigue crack growth characteristics between room and low temperatures are mainly explained by the crack closure and the strengthening due to the plasticity induced and roughness induced.

• Macromolecular Research
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• 제12권1호
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• pp.53-62
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• 2004

We have prepared polymer composites of low-density polyethylene (LDPE) and ionomers (Surlyn 8940) containing polar segments and metal ions by melt blending with carbon black (CB) as a conductive filler. The resistivity and positive temperature coefficient (PTC) of the ionomer/LDPE/CB composites were investigated with respect to the CB content. The ionomer content has an effect on the resistivity and percolation threshold of the polymer composites; the percolation curve exhibits a plateau at low CB content. The PTC intensity of the crosslinked ionomer/LDPE/CB composite decreased slightly at low ionomer content, and increased significantly above a critical concentration of the ionomer. Irradiation-induced crosslinking could increase the PTC intensity and decrease the NTC effect of the polymer composites. The minimum switching current (Ι$\sub$trip/) of the polymer composites decreased with temperature; the ratio of Ι$\sub$trip/ for the ionomer/LDPE/CB composite decreased to a greater extent than that of the LDPE/CB composite. The average temperature coefficient of resistance (${\alpha}$$\sub$T/) for the polymer composites increased in the low-temperature region.

• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.43-47
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• 2024

The size of semiconductor devices has been scaled down to improve packing density and output performance. However, there is uncontrollable spreading of the dopants that comprise the well, punch-stop, and channel-stop when using high-temperature annealing processes, such as rapid thermal annealing (RTA). In this context, low-temperature deuterium annealing (LTDA) performed at a low temperature of 300℃ is proposed to reduce the thermal budget during CMOS fabrication. The LTDA effectively eliminates the interface trap in the gate dielectric layer, thereby improving the electrical characteristics of devices, such as threshold voltage (V_TH), subthreshold swing (SS), on-state current (I_ON), and off-state current (I_OFF). Moreover, the LTDA is perfectly compatible with CMOS processes.

• 대한전자공학회논문지
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• 제26권9호
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• pp.1375-1380
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• 1989

Mobility reduction parameters are extracted using a method based on the exploitatiion of Id-Vg and Gm-Vg characteristics of short channel n-MOSFETs in strong inversion region at room temperature. It is found that the reduction of the maximum field effect mobility, \ulcornerFE,max, with the channel length is due to i) the difference between the threshold voltage and the gate voltage which corresponds to the maximum transconductance, and ii) the channel length dependence of the mobility attenuation coefficient, \ulcorner The low field mobility, \ulcorner, is found to be independent of the channel length down to 0.25 \ulcorner ofeffective channel length. Also, the channel length reduction, -I, the mobility attenuation coefficient, \ulcorner the threshold voltage, Vt, and the source-drain resistance, Rsd, are determined from the Id-Vg and -gm-Vg characteristics n-MOSFETs.