• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.59-62
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• 2017

CNT (carbon nanotube) resistors with low resistance and negative TCR (temperature coefficient of resistance) were fabricated with yarned CNT (carbon nanotube) fibers. The CNT fibers were prepared by yarning CNTs grown on the silicone substrate by CVD (chemical vapor deposition) method. The CNT resistors were fabricated by winding CNT fibers on the surface of ceramic rod. Both metal terminals were connected with the CNT fiber wound on the ceramic rod. We measured electrical resistance and thermal stability with the number of CNT fibers wound. The CNT resistor system shows linearly decreased resistance with the number of CNTs wound on the ceramic rod and saturated at 20 strands. The CNT resistor system has negative TCR between $-1,000{\sim}-2,000ppm/^{\circ}C$ and stable frequency properties under 100 kHz.

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.3
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• pp.371-380
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• 2004

In the dust separation by using porous filter media, the structure of dust layer deposited on the filter surface of filter medium directly affects the effective filtration. The present study has investigated the specific resistance (K$_2$') of the dust layer and its porosity ($\varepsilon$$_{c}$) for three different filters; FA composite filter, metal fiber filter and stainless filter. The specific resistance (K$_2$') increased and at the same time the cake porosity ($\varepsilon$$_{c}$) decreased with the increase of filtration velocity, possibly due to the compressible effect of dust layer. However, under the low dust concentration, subsequent dust particles would block the open channels through the layer resulting in high specific resistance of the layer. The FA composite filter among three filters was shown to be the most effective filter for dust cake filtration at low filtration velocities less than 0.1 m/s for an approximate dust concentration of 5 g/㎥.

• Journal of the Korean institute of surface engineering
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• v.50 no.4
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• pp.272-276
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• 2017

The response of AISI 310 type austenitic stainless steel to the novel low temperature plasma carburizing process has been investigated in this work. This grade of stainless steel shows better corrosion resistance and high temperature oxidation resistance due to its high chromium and nickel content. In this experiment, plasma carburizing was performed on AISI 310 stainless steel in a D.C. pulsed plasma ion nitriding system at different temperatures in $H_2-Ar-CH_4$ gas mixtures. The working pressure was 4 Torr (533Pa approx.) and the applied voltage was 600 V during the plasma carburizing treatment. The hardness of the samples was measured by using a Vickers micro hardness tester with the load of 100 g. The phase of carburized layer formed on the surface was confirmed by X-ray diffraction. The resultant carburized layer was found to be precipitation free and resulted in significantly improved hardness and corrosion resistance.

• 전기의세계
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• v.23 no.6
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• pp.49-55
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• 1974

Amorphous semiconductor from As 30 Te 48 Ge 10 Si 12 was prepared, and studied electron microscopy, X-ray analysis and resistivity measurement. It's resistivity is 1.56*10$^{6}$ .ohm.-cm when small ampule is used for preparing sample it is found that no phase separation has occurced by electron microscopy, and that phase transition temperature is 232.deg. C by differential Thermal Analysis. The specimen showed threshold switching that the low resistance state occur at critical electric field and the resistance recover at low applied field. Critical electric field of the switching is 10$^{5}$ V/cm at room temperature. Threshold voltage secreace exponentially with increasing ambient temperature and at that each voltage resistance of the switching device increase exponentially. According to the series resistance and applied vottage current slope on the V-I curve is varied. When applied voltage is decreased after switching, the resistance of the switching device is increased. By this result the origin of the switching is the Joule's heating.

• Journal of Power Electronics
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• v.5 no.4
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• pp.282-288
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• 2005

In this paper, a new speed sensorless induction motor scheme which can estimate rotor speed and rotor resistance simultaneously is presented. The rotor flux with a low frequency sinusoidal waveform is used to conduct on-line simultaneous estimation of the rotor speed and rotor resistance. Hence the proposed sensorless control method is robust to rotor resistance variations. Also, the control scheme has no current minor loop to determine voltage references. It contributes to good control performance at low speeds. Some simulation results supported by experiments are given to show the effectiveness of this method.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.53 no.9
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• pp.552-561
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• 2004

This paper is concerned with a new speed sensorless induction motor scheme which can be successfully applied to at any speed including even zero speed. The proposed method is robust against rotor resistance variations. In addition, simultaneous on-line estimations of speed and rotor resistance are realized based on a feedforward type torque control approach. The rotor flux with a low frequency sinusoidal waveform has been utilized to help the simultaneous estimation for both speed and rotor resistance. The control scheme has no current minor loop to determine voltage references. Since the proposed estimation does not depend on any derivative terms of currents and stator voltages, it offers a good performance at extremely low speed region for sensorless induction motor. Furthermore, the proposed control is simply using motor parameters and stator currents without determining any PI gains for current feedback and any signal injection for the rotor resistance estimation. Finally, both simulation and experimental results are given to show the effectiveness of this method.

• The Korean Journal of Physiology and Pharmacology
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• v.19 no.3
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• pp.191-196
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• 2015

Attenuated functional exercise capacity in elderly and diseased populations is a common problem, and stems primarily from physical inactivity. Decreased function and exercise capacity can be restored by maintaining muscular strength and mass, which are key factors in an independent and healthy life. Resistance exercise has been used to prevent muscle loss and improve muscular strength and mass. However, the intensities necessary for traditional resistance training to increase muscular strength and mass may be contraindicated for some at risk populations, such as diseased populations and the elderly. Therefore, an alternative exercise modality is required. Recently, blood flow restriction (BFR) with low intensity resistance exercise (LIRE) has been used for such special populations to improve their function and exercise capacity. Although BFR+LIRE has been intensively studied for a decade, a comprehensive review detailing the effects of BFR+LIRE on both skeletal muscle and vascular function is not available. Therefore, the purpose of this review is to discuss previous studies documenting the effects of BFR+LIRE on hormonal and transcriptional factors in muscle hypertrophy and vascular function, including changes in hemodynamics, and endothelial function.

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.193-195
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• 2009

This paper aims to develop a low gate source voltage ($V_{gs}$) N-LDMOS element that is fully operational at a CMOS Logic Gate voltage (3.3 or 5 V) realized using the 0.35 μm BCDMOS process. The basic structure of the N-LDMOS element presented here has a Low $V_{gs}$ LDMOS structure to which the thickness of a logic gate oxide is applied. Additional modification has been carried out in order to obtain features of an improved breakdown voltage and a specific on resistance ($R_{sp}$). A N-LDMOS element can be developed with improved features of breakdown voltage and specific on resistance, which is an important criterion for power elements by means of using a proper structure and appropriate process modification. In this paper, the structure has been made to withstand the excessive electrical field on the drain side by applying the double gate oxide structure to the channel area, to improve the specific on resistance in addition to providing a sufficient breakdown voltage margin. It is shown that the resulting modified N-LDMOS structure with the feature of the specific on resistance is improved by 31%, and so it is expected that optimized power efficiencies and the size-effectiveness can be obtained.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39C no.3
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• pp.234-238
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• 2014

Multichip packaging was achieved the best solution to significantly reduce thermal resistance at the same time, to increase luminance intensity in LEDs packaging application. For the packaging, thermal spreading resistance is an important parameter to get influence the total thermal performance of LEDs. In this study, silicon-based multichip light emitting diodes (LEDs) packaged module has been examined for thermal characteristics in several parameters. Compared to the general conventional single LED packaged chip module, multichip LED packaged module has many advantages of low cost, low density, small size, and low thermal resistance. This analyzed module is comprised of multichip LED array, which consists of 32 LED packaged chips with supplement power of 0.2 W at every single chip. To realize the extent of thermal distribution, the computer-aided design model of 6.4 W Si-based multichip LED module was designed and was performed by the simulation basis of actual fabrication flow. The impact of thermal distribution is analyzed in alternative ways both optimizing numbers of fins and the thickness of that heatsink. In addition, a thermal resistance model was designed and derived from analytical theory. The optimum simulation results satisfies the expectations of the design goal and the measurement of IR camera results. tart after striking space key 2 times.

• Journal of Ocean Engineering and Technology
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• v.25 no.1
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• pp.56-60
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• 2011

A low temperature plasma carburizing process was performed to AISI 304L austenitic stainless steel to achieve the enhancement of surface hardness without a compromise in their corrosion resistance. Attempts were made to investigate the influence of the processing temperatures on the surface-hardened layer during low temperature plasma carburizng in order to obtain the optimum processing conditions. The expanded austenite (${\gamma}C$) was formed on all the treated surfaces. Precipitates of chromium carbides were detected in the hardened layer (C-enriched layer) only for the specimen treated at $500^{\circ}C$. The hardened layer thickness of ${\gamma}C$ increased up to about $35\;{\mu}m$, with increasing treatment temperature. The surface hardness reached about 1000 $HK_{0.05}$, which is about 4 times higher than that of the untreated sample (250 $HK_{0.05}$). Minor loss in corrosion resistance was observed for the specimens treated at temperatures of $310^{\circ}C-450^{\circ}C$ compared with untreated austenitic stainless steel. Particularly, the precipitation of chromium carbides at $500^{\circ}C$ led to a significant decrease in the corrosion resistance.